Datasheet

UNISONIC TECHNOLOGIES CO., LTD
18NM65-SH
Power MOSFET
18A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 18NM65-SH is a high voltage super junction
MOSFET and is designed to have better characteristics.
The UTC 18NM65-SH Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and
reliability. such as low gate charge, low on-state resistance and
have a high power density and high rugged avalanche
characteristics. This super junction MOSFET usually used at
AC/DC power conversion, and industrial power applications.

FEATURES
* RDS(ON) < 0.35Ω @ VGS=10V, ID=9A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18NM65L-TA3-T
18NM65G-TA3-T
18NM65L-TF1-T
18NM65G-TF1-T
18NM65L-TF2-T
18NM65G-TF2-T
18NM65L-TF3-T
18NM65G-TF3-T
18NM65L-TM3-R
18NM65G-TM3-R
18NM65L-TN3-R
18NM65G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R205-070.D
18NM65-SH

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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18NM65-SH

ABSOLUTE MAXIMUM RATINGS
Power MOSFET
(TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
18
A
Pulsed Drain Current
IDM
45
A
Avalanche Current
IAR
18
A
Avalanche Energy
Single Pulsed
EAS
500 (Note 3)
mJ
Peak Diode Recovery dv/dt
dv/dt
6
V/ns
TO-220
235
W
TO-220F/ TO-220F1
Power Dissipation
PD
390
W
TO-220F2
TO-251/TO-252
357
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=150mH, IAS=3.6A, VDD=50V, RG=25Ω, Starting TJ=25°С
4. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°С/W
110
0.53
°С/W
°С/W
5
°С/W
1.79
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=650V, VGS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=9A (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50VDSS,
Gate Source Charge
QGS
ID=1.3A, IG=100µA
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, VDS=30VDSS,
ID=0.5A, RG=25Ω (External)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
IS
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V
Reverse Recovery Time
trr
VGS=0V, dIF/dt=100A/µs,
IS=18A, VR=100V
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
650
2.5
25
±100
V
µA
nA
4.5
0.35
V
Ω
1100
750
65
pF
pF
pF
190
11
36
86
190
250
185
nC
nC
nC
ns
ns
ns
ns
420
7
18
A
54
A
1.5
V
ns
µC
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
1.25
VGS=10V, ID=1A
250
Drain Current, ID (A)
Drain Current, ID (µA)
300
200
150
100
1.0
0 .75
0.5
0.25
50
0
Drain-Source On-State Resistance
Characteristics
0
200
600
400
800
1000
Drain-Source Breakdown Voltage, BVDSS (V)
0
0
0.5
1
1.5
2
2.5
Drain to Source Voltage, VDS (V)
Continuous Drain-Source Diode
Forward Current, IS (A)
Continuous Drain-Source Diode Forward
Current vs. Source to Drain Voltage
24
20
16
12
8
4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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