UNISONIC TECHNOLOGIES CO., LTD 6NM70-SH Preliminary Power MOSFET 6A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM70-SH is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 6NM70-SH Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications. FEATURES * RDS(ON) < 1.2Ω @ VGS = 10V, ID = 3.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6NM70L-TA3-T 6NM70G-TA3-T 6NM70L-TF1-T 6NM70G-TF1-T 6NM70L-TF3-T 6NM70G-TF3-T 6NM70L-TF3-T 6NM70G-TF3-T 6NM70L-TM3-R 6NM70G-TM3-R 6NM70L-TN3-R 6NM70G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R205-101.b 6NM70-SH Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-101.b 6NM70-SH Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 6.0 A Drain Current Pulsed (Note 2) IDM 24 A Avalanche Energy, Single Pulsed (Note 3) EAS 50 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.8 V/ns TO-220 125 W TO-220F 40 W Power Dissipation (TC = 25°C) PD TO-220F1/TO-220F2 42 W TO-251/TO-252 55 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=70mH, IAS=1.2A, VDD=50V, RG=0 Ω, Starting TJ=25°C 4. ISD ≤ 6.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220 TO-220F Junction to Case TO-220F1/TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °С/W 110 3.1 1.0 2.9 2.27 °С/W °С/W °С/W °С/W °С/W 3 of 7 QW-R205-101.b 6NM70-SH Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS BVDSS VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V Drain-Source Leakage Current IDSS VDS = 560V, TC = 125°C Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V ID = 250mA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Drain-Source ON-State Resistance RDS(ON) VGS = 10V, ID = 3.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, IG=100μA Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Turn-on Delay Time tD(ON) VDD =30V, VGS=10V, Turn-on Rise Time tR ID =0.5A, RG=25Ω Turn-off Delay Time tD(OFF) (Note 1, 2) Turn-off Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =6.0A Reverse Recovery Time trr VGS = 0 V, IS = 6.0A, di/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR MIN TYP MAX UNIT 700 1 1 100 -100 0.67 2.5 V μA μA nA nA V/°C 4.5 1.2 V Ω 178 154 18 pF pF pF 40 4 7.5 70 47 122 38 nC nC nC ns ns ns ns 328 2.5 6 A 24 A 1.4 V ns μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-101.b 6NM70-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-101.b 6NM70-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-101.b 6NM70-SH Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-101.b