Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N40K-TA
Power MOSFET
2A, 400V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N40K-TA is an N-channel mode power MOSFET
using UTC’ s advanced technology to provide customers with
a minimum on-state resistance, stable off–state characteristics
and superior switching performance. It also can withstand high
energy pulse in the avalanche.
The UTC 2N40K-TA is usually used in general purpose
switching applications, motor control circuits and switched mode
power supply.

FEATURES
* High switching speed
* RDS(ON) < 2.5Ω @ VGS=10V, ID=1.25A
* 100% avalanche tested

SYMBOL
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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2N40K-TA
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Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N40KG-AA3-R
2N40KL-TA3-T
2N40KG-TA3-T
2N40KL-TF3-T
2N40KG-TF3-T
2N40KL-TF1-T
2N40KG-TF1-T
2N40KL-TF2-T
2N40KG-TF2-T
2N40KL-TF3T-T
2N40KG-TF3T-T
2N40KL-TM3-T
2N40KG-TM3-T
2N40KL-TMS-T
2N40KG-TMS-T
2N40KL-TMS2-T
2N40KG-TMS2-T
2N40KL-TMS4-T
2N40KG-TMS4-T
2N40KL-TN3-R
2N40KG-TN3-R
2N40KL-TND-R
2N40KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
SOT-223
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
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Tape Reel
Tape Reel
MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SOT-223
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed
Drain Current
Avalanche Current
Single Pulsed Avalanche Energy
SOT-223
TO-220
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
Power Dissipation
SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
PD
RATINGS
400
±30
2
7
2.5
85
1
54
UNIT
V
V
A
A
A
mJ
W
W
23
W
24
W
44
W
Linear Derating Factor
∆PD / ∆TA
0.2
W/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 42.5mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
SOT-223
TO-220/TO-220F
TO-220F1/ TO-220F2
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SOT-223
TO-220
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
150
UNIT
°C/W
62.5
°C/W
110
°C/W
14
2.32
°C/W
°C/W
5.4
°C/W
5.3
°C/W
2.8
°C/W
θJA
θJC
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ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature
△BVDSS/△TJ VDS=VGS, ID=250µA
Coefficient
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.25A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID =0.5A, RG =25Ω
Rise Time
tR
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TC=25°C
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
400
V
0.45
V/°C
1
25
µA
+10 +200 nA
-10 -200 nA
2.0
4.0
2.5
V
Ω
218
37
5
pF
pF
pF
42
32
57
23
11
4.3
1.35
ns
ns
ns
ns
nC
nC
nC
2.5
10
1.2
A
A
V
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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