UNISONIC TECHNOLOGIES CO., LTD 2N40K-TA Power MOSFET 2A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N40K-TA is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching performance. It also can withstand high energy pulse in the avalanche. The UTC 2N40K-TA is usually used in general purpose switching applications, motor control circuits and switched mode power supply. FEATURES * High switching speed * RDS(ON) < 2.5Ω @ VGS=10V, ID=1.25A * 100% avalanche tested SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-024.C 2N40K-TA Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N40KG-AA3-R 2N40KL-TA3-T 2N40KG-TA3-T 2N40KL-TF3-T 2N40KG-TF3-T 2N40KL-TF1-T 2N40KG-TF1-T 2N40KL-TF2-T 2N40KG-TF2-T 2N40KL-TF3T-T 2N40KG-TF3T-T 2N40KL-TM3-T 2N40KG-TM3-T 2N40KL-TMS-T 2N40KG-TMS-T 2N40KL-TMS2-T 2N40KG-TMS2-T 2N40KL-TMS4-T 2N40KG-TMS4-T 2N40KL-TN3-R 2N40KG-TN3-R 2N40KL-TND-R 2N40KG-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tape Reel Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel MARKING TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOT-223 2 of 7 QW-R205-024.C 2N40K-TA Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Pulsed Drain Current Avalanche Current Single Pulsed Avalanche Energy SOT-223 TO-220 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D Power Dissipation SYMBOL VDSS VGSS ID IDM IAR EAS PD RATINGS 400 ±30 2 7 2.5 85 1 54 UNIT V V A A A mJ W W 23 W 24 W 44 W Linear Derating Factor ∆PD / ∆TA 0.2 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 42.5mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA Junction to Ambient Junction to Case PARAMETER SOT-223 TO-220/TO-220F TO-220F1/ TO-220F2 TO-220F3 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D SOT-223 TO-220 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS 150 UNIT °C/W 62.5 °C/W 110 °C/W 14 2.32 °C/W °C/W 5.4 °C/W 5.3 °C/W 2.8 °C/W θJA θJC 3 of 7 QW-R205-024.C 2N40K-TA Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature △BVDSS/△TJ VDS=VGS, ID=250µA Coefficient Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.25A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID =0.5A, RG =25Ω Rise Time tR (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TC=25°C Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=2.5A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 0.45 V/°C 1 25 µA +10 +200 nA -10 -200 nA 2.0 4.0 2.5 V Ω 218 37 5 pF pF pF 42 32 57 23 11 4.3 1.35 ns ns ns ns nC nC nC 2.5 10 1.2 A A V 4 of 7 QW-R205-024.C 2N40K-TA Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 7 QW-R205-024.C 2N40K-TA Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R205-024.C 2N40K-TA Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-024.C