DG9414, DG9415 Datasheet

DG9414, DG9415
Vishay Siliconix
Single 4 x 1 and Dual 2 x 1 Multiplexers
DESCRIPTION
The DG9414, a single 4 to 1 multiplexer, and the DG9415, a
dual 2 x 1 multiplexer, are monolithic CMOS analog devices
designed for high performance low voltage operation.
Combining low power, high speed, low on-resistance and
small physical size, the DG9414 and DG9415 are ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
Both the DG9414 and DG9415 are built on Vishay Siliconix’s
low voltage BCD-15 process. Minimum ESD protection, per
Method 3015.7, is 2000 V. An epitaxial layer prevents
latchup. Break-before-make is guaranteed for DG9415.
FEATURES
• Low voltage operation (+ 2.7 V to + 12 V)
•
•
•
•
•
Low on-resistance - RDS(on): 14 
Low power consumption
TTL compatible
ESD protection > 2000 V (method 3015.7)
Available in TSSOP-10 (aka MSOP-10)
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• High accuracy
• Simple logic interface
• Reduce board space
APPLICATIONS
•
•
•
•
•
•
Battery operated systems
Portable test equipment
Sample and hold circuits
Cellular phones
Communication systems
Networking equipment
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG9415DQ
DG9414DQ
NO1
1
10
V+
COM1
2
9
COM2
NC1
3
8
NO2
A0
EN
4
7
NC2
A1
GND
5
6
A0
NO2
1
10
V+
NO3
2
9
COM
NO1
3
8
NO0
EN
4
7
GND
5
6
Logic
Logic
EN
A1
A0
On Switch
EN
A0
On Switch
1
X
X
None
1
X
None
0
0
0
NO0
0
0
0
0
1
NO1
NC1
NC2
0
1
0
NO2
0
1
0
1
1
NO3
NO1
NO2
X = Do not care
X = Do not care
ORDERING INFORMATION
Temp Range
Package
- 40 °C to 85 °C
MSOP-10
Document Number: 71766
S11-0984-Rev. G, 23-May-11
Part Number
DG9414DQ-T1-E3
DG9415DQ-T1-E3
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9414, DG9415
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
Limit
- 0.3 to + 13
- 0.3 to (V+ + 0.3)
± 20
± 40
> 2000
- 65 to 150
IN, COM, NC, NOa
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
ESD (Method 3015.7)
Storage Temperature (D Suffix)
Unit
V
mA
V
°C
Notes:
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 2.4 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.c
Typ.b
Max.c
Unit
VANALOG
Full
0
RON
Room
Full
63
V+
97
101
V
Room
3
11
Room
14
33
Analog Switch
Analog Signal Ranged
On-Resistance
RON Matchd
RON Flatness
RON
RON
Flatness
d,f
NO or NC Off Leakage Currentg
COM Off Leakage Currentg
Channel-On Leakage Currentg
V+ = 2.7 V, VCOM = 1 V/1.5 V/2 V
INO or INC = 5 mA
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
ICOM(on)
V+ = 3.3 V
VCOM = VNO or VNC = 0.3 V/3 V
Room
Full
-1
- 10
1
10
IINL or IINH
VIN = 0 or V+
1
INO/NC(off)
ICOM(off)
V+ = 3.3 , VNO or VNC = 0.3 V/3 V
VCOM = 3 V/0.3 V

nA
Digital Control
Input Currentg
Full
-1
d
Input High Voltage
VINH
Full
1.6
Input Low Voltaged
VINL
Full
Turn-On Time
tON
Room
Full
102
125
142
Turn-Off Time
tOFF
Room
Full
45
68
75
0.4
µA
V
Dynamic Characteristics
Break-Before-Make Time
VNO or VNC = 1.5 V
tD
Room
7
Transition Time
ttrans
VNO = 1.5 V/0 V, VNC = 0 V/1.5 V
Room
Full
81
Charge Injectiond
QINJ
CL = 1 nF, Vgen = 0 V, Rgen = 0 
Room
3
Off-Isolation
OIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 58
Channel-to-Channel Crosstalk
(DG9415)
XTALK
RL = 50 , f = 1 MHz
Room
- 64
DG9414
Room
11
DG9415
Room
10
DG9414
Room
26
DG9415
Room
13
DG9414
Room
43
DG9415
Room
25
NO, NC Off Capacitance
CNO(off),
CNC(off)
COM Off Capacitance
CCOM(off)
COM On Capacitance
CCOM(on)
f = 1 MHz
ns
78
128
144
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Currenth
I+
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2
2.7
V+ = 3.3 V, VIN = 0 V or 3.3 V
Full
3.3
V
1
µA
Document Number: 71766
S11-0984-Rev. G, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9414, DG9415
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.c
Typ.b
Max.c
Unit
VANALOG
Full
0
V+
V
RON
Room
Full
33
56
60
Room
2
10
Room
10
20
Analog Switch
Analog Signal Ranged
On-Resistance
RON
RON Match
RON Flatnessf
RON
Flatness
NO or NC Off Leakage Currentg
INO/NC(off)
V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V
INO or INC = 10 mA
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
ICOM(on)
V+ = 5.5 V
VCOM = VNO or VNC = 1 V/4.5 V
Room
Full
-1
- 10
1
10
IINL or IINH
VIN = 0 or V+
Full
-1
1
VINH
Full
1.8
VINL
Full
Turn-On Timeh
tON
Room
Full
56
77
86
Turn-Off Timeh
tOFF
Room
Full
25
46
50
COM Off Leakage Currentg
Channel-On Leakage Currentg
ICOM(off)
V+ = 5.5 V, VNO or VNC = 1 V/4.5 V
VCOM = 4.5 V/1 V

nA
Digital Control
Input Currenth
Input High Voltage
Input Low
d
Voltaged
0.6
µA
V
Dynamic Characteristics
Break-Before-Make Timeth
VNO or VNC = 3 V
tD
Room
7
Transition Time
ttrans
VNO = 3 V/ 0 V, VNC = 0 V/3 V
Room
Full
47
Off-Isolation
OIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 58
Channel-to-Channel Crosstalk
(DG9415)
XTALK
RL = 50 , f = 1 MHz
Room
- 64
QINJ
CL = 1 nF, Vgen = 0 V, Rgen = 0 
Charge Injectiond
NO, NC Off Capacitance
CNO(off),
CNC(off)
COM Off Capacitance
CCOM(off)
COM On Capacitance
CCOM(on)
f = 1 MHz
ns
34
Room
6
DG9414
Room
11
DG9415
Room
10
DG9414
Room
25
DG9415
Room
13
DG9414
Room
42
DG9415
Room
24
77
84
dB
pC
pF
Power Supply
Power Supply Range
Power Supply Current
V+
h
I+
4.5
V+ = 5.5 V, VIN = 0 V or 5.5 V
Full
5.5
V
1
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guaranteed by 12 V leakage testing, not production tested.
h. Guaranteed by worst case test conditions and not subject to test.
Document Number: 71766
S11-0984-Rev. G, 23-May-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9414, DG9415
Vishay Siliconix
SPECIFICATIONS (V+ = 12 V)
Parameter
Symbol
Test Conditions Unless Specified
V+ = 12 V, VIN = 0.8 V or 2.4 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.c
Typ.b
Max.c
Unit
VANALOG
Full
0
12
V
RON
Room
1
9
RON
Flatness
Room
1
10
Room
Full
14
17
19
Analog Switch
Analog Signal Ranged
RON Match
RON Flatnessd,f
RON
On-Resistance
INO(off)
INC(off)
Switch Off
Leakage Current
ICOM(off)
Channel On
Leakage Current
V+ = 10.8 V, INO, INC = 25 mA
VCOM = 2/9 V
VCOM = 1/11 V
VNO, VNC = 11/1 V
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
ICOM(on)
VNO, VNC = VCOM = 11/1 V
Room
Full
-1
- 10
1
10
IINL or IINH
VIN = 0 or V+
Full
-1
1
2.4

nA
Digital Control
Input Current
d
Input High Voltage
VINH
Full
d
VINL
Full
Input Low Voltage
0.8
µA
V
Dynamic Characteristics
Turn-On Timeh
tON
Turn-Off Timeh
tOFF
Break-Before-Make Time Delayh
Transition Time
Charge Injectiond
Off Isolation
d
Channel-to-Channel Crosstalkd
RL = 300 , CL = 35 pF
VNO, VNC = 5 V See Figure 2
Room
Full
33
55
59
Room
Full
17
40
41
ns
tD
DG419L Only, VNC, VNO = 5 V
RL = 300 , CL = 35 pF
Room
ttrans
VNO = 5 V/ 0 V, VNC = 0 V/ 5 V
Room
Full
QINJ
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
13
RL = 50 , CL = 5 pF
f = 1 MHz
Room
- 58
Room
- 64
OIRR
XTALK
NO, NC Off Capacitanced
CNO(off),
CNC(off)
COM Off Capacitance
CCOM(off)
COM On Capacitanced
CCOM(on)
VIN = 0 or V+, f = 1 MHz
2
24
29
DG9414
Room
10
DG9415
Room
10
DG9414
Room
24
DG9415
Room
13
DG9414
Room
40
DG9415
Room
23
56
59
pC
dB
pF
Power Supplies
Positive Supply Current
I+
VIN = 0 V or 12 V
Full
1
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guaranteed by 12 V leakage testing, not production tested.
h. Guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71766
S11-0984-Rev. G, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9414, DG9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
A = 85 °C
B = 25 °C
C = - 40 °C
T = 25 °C
70
RON - On-Resistance ()
R ON - On-Resistance ()
70
60
V+ = 3.0 V
IS = 5 mA
50
40
V+ = 5.0 V
IS = 10 mA
30
V+ = 12.0 V
IS = 25 mA
20
10
60
V+ = 3.0 V
IS = 5 mA
50
A
40
B
C
V+ = 12.0 V
IS = 25 mA
B
A
A
30
B
C
20
10
0
C
0
0
3
6
12
9
0
2
4
VCOM - Analog Voltage (V)
6
8
10
12
VCOM - Analog Voltage (V)
RON vs. VCOM and Supply Voltage
RON vs. Analog Voltage and Temperature
10000
10 m
VAX, V EN = 0 V
1m
100
I+ - Supply Current (nA)
1000
I+ - Supply Current (nA)
V+ = 5.0 V
IS = 10 mA
V+ = 12.0 V
V+ = 5.0 V
10
V+ = 12 V
100 µ
10 µ
1µ
100 n
10 n
1
- 60
- 40
- 20
0
20
40
60
80
1n
10
100
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Temperature (°C)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
1000
100
V+ = 12 V
V+ = 12.0 V
Leakage Current (pA)
Leakage Current (pA)
60
100
ICOM(on)
ICOM(off)
INO(off), INC(off)
10
ICOM(off)
20
- 20
INO(off)/INC(off)
ICOM(on)
- 60
1
- 60
-100
- 40
- 20
0
20
40
60
80
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 71766
S11-0984-Rev. G, 23-May-11
100
0
2
4
6
8
10
12
VCOM, VNO, VNC - Analog Voltage (V)
Leakage vs. Analog Voltage
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DG9414, DG9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
120
tTRANS- V+ = 3 V
100
100
tTRANS- V+ = 3 V
80
tTRANS+ V+ = 3 V
80
tTRANS+ V+ = 3 V
60
60
tTRANS - V+ = 5 V
tTRANS- V+ = 5 V
tTRANS+ V+ = 5 V
40
tTRANS+ V+ = 5 V
40
tTRANS+ V+ = 12 V
tTRANS+ V+ = 12 V
tTRANS - V+ = 12 V
20
0
- 60
- 40
- 20
0
20
40
60
80
tTRANS- V+ = 12 V
20
0
- 60
100
- 40
- 20
0
Temperature (°C)
Transistion Time vs. Temperature (DG9414)
40
60
80
100
Transistion Time vs. Temperature (DG9415)
140
10
120
100
80
60
Loss
- 10
tON V+ = 3 V
tON V+ = 5 V
40
tOFF V+ = 3 V
tON V+ = 12 V
Loss, OIRR, X TALK (dB)
t ON , t OFF - Switching Time (ns)
20
Temperature (°C)
- 50
XTALK
OIRR
V+ = 12 V
RL
- 70
tOFF V+ = 5 V
20
- 30
tOFF V+ = 12 V
0
- 60
- 90
- 40
- 20
0
20
40
60
80
100
100 k
1M
Switching Time vs. Temperature
1G
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency (DG9414)
10
3.0
Loss
2.5
VT - Switching Threshold (V)
- 10
Loss, OIRR, X TALK (dB)
100 M
10 M
Frequency (Hz)
Temperature (°C)
- 30
XTA LK
OIRR
- 50
V+ = 12 V
RL
- 70
- 90
100 k
2.0
1.5
1.0
0.5
0.0
1M
10 M
100 M
Frequency (Hz)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency (DG9415)
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1G
2
4
6
8
10
12
14
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 71766
S11-0984-Rev. G, 23-May-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9414, DG9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
30
30
Q - Charge Injection (pC)
Q - Charge Injection (pC)
50
V+ = 3 V
10
V+ = 5 V
- 10
- 30
- 50
2
4
6
V+ = 5 V
- 10
V+ = 12 V
- 30
V+ = 12 V
0
V+ = 3 V
10
8
10
- 50
12
0
2
VCOM - Analog Voltage (V)
Charge Injection vs. Analog Voltage (DG9414)
4
6
8
VCOM - Analog Voltage (V)
10
12
Charge Injection vs. Analog Voltage (DG9415)
SCHEMATIC DIAGRAM (Typical Channel)
V+
S
VLevel
Shift/
Drive
VIN
V+
D
GND
Figure 1.
TEST CIRCUITS
V+
Logic
Input
VINH
tr < 5 ns
tf < 5 ns
50 %
VINL
Switch
Input
VIN
Switch
Output
V+
NO or NC
COM
tOFF
VOUT
VOUT
IN
RL
300 
GND
CL
35 pF
CL (includes fixture and stray capacitance)
VOUT = VIN
RL
0.9 x VOUT
0V
Switch
Output
Note:
90 %
tON
Logic input waveform is inverted for switches that
have the opposite logic sense control
RL + rON
Figure 2. Switching Time
Document Number: 71766
S11-0984-Rev. G, 23-May-11
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DG9414, DG9415
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
VNO
VNC
tr < 5 ns
tf < 5 ns
VINL
COM
NO
VINH
VO
NC
RL
300 
IN
CL
35 pF
VNC = VNO
VO
GND
Switch
Output
90 %
0V
tD
tD
50 %
tr < 5 ns
tf < 5 ns
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+15 V
V+
NO or NC
Logic VINH
Input
VINL
COM
VS1
VO
NC or NO
VS2
RL
300 
IN
tTRANS+
CL
35 pF
tTRANS-
VS1
V01
GND
90 %
Switch
Output
CL (includes fixture and stray capacitance)
VO = VS
10 %
V02
VS2
RL
RL + rON
Figure 4. Transition Time
VO
V+
VO
Rg
V+
COM
IN
Vg
NO or NC
VO
IN
OFF
CL
1 nF
ON
OFF
Q = VO x CL
GND
IN dependent on switch configuration Input polarity determined
by sense of switch.
VIN = 0 - V+
Figure 5. Charge Injection
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Document Number: 71766
S11-0984-Rev. G, 23-May-11
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DG9414, DG9415
Vishay Siliconix
TEST CIRCUITS
V+
C
V+
VS
VIN
NO or NC
COM
Rg = 50 
50 
IN
0 V or 2.4 V
NC or NO
VOUT
GND
XTALK Isolation = 20 log
VOUT
VIN
C = RF bypass
Figure 6. Crosstalk
V+
C
NO or NC
COM
Rg = 50 
RL
50 
IN
0 V, 2.4 V
GND
Off Isolation = 20 log
C = RF Bypass
VCOM
VNO/NC
Figure 7. Off Isolation
V+
C
V+
COM
Meter
IN
0 V, 2.4 V
NO or NC
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 8. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71766.
Document Number: 71766
S11-0984-Rev. G, 23-May-11
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Package Information
Vishay Siliconix
MSOP:
10−LEADS
JEDEC Part Number: MO-187, (Variation AA and BA)
(N/2) Tips)
2X
5
A B C 0.20
N N-1
0.60
0.48 Max
Detail “B”
(Scale: 30/1)
Dambar Protrusion
E
1 2
0.50
N/2
0.60
0.08 M C B S
b
A S
7
Top View
b1
e1
With Plating
e
A
See Detail “B”
c1
0.10 C
-H-
A1
D
6
Seating Plane
c
Section “C-C”
Scale: 100/1
(See Note 8)
Base Metal
-A-
3
See Detail “A”
Side View
0.25
BSC
C
Parting Line
0.07 R. Min
2 Places
C
ς
A2
Seating Plane
0.05 S
E1
-B-
L 4
T
-C-
3
0.95
End View
Detail “A”
(Scale: 30/1)
NOTES:
1.
2.
Dimensioning and tolerances per ANSI.Y14.5M-1994.
3.
Dimensions “D” and “E1” do not include mold flash or protrusions, and are
measured at Datum plane -H- , mold flash or protrusions shall not exceed
0.15 mm per side.
4.
Dimension is the length of terminal for soldering to a substrate.
5.
Terminal positions are shown for reference only.
6.
Formed leads shall be planar with respect to one another within 0.10 mm at
seating plane.
7.
N = 10L
Die thickness allowable is 0.203"0.0127.
The lead width dimension does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08 mm total in excess of the lead width
dimension at maximum material condition. Dambar cannot be located on the
lower radius or the lead foot. Minimum space between protrusions and an
adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.
8.
Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.
9.
Controlling dimension: millimeters.
10. This part is compliant with JEDEC registration MO-187, variation AA and BA.
11. Datums -A- and -B- to be determined Datum plane -H- .
12. Exposed pad area in bottom side is the same as teh leadframe pad size.
Document Number: 71245
12-Jul-02
MILLIMETERS
Dim
Min
Nom
Max
A
A1
A2
b
b1
c
c1
D
E
E1
e
e1
L
N
T
-
-
1.10
0.05
0.10
0.15
0.75
0.85
0.95
0.17
-
0.27
8
0.17
0.20
0.23
8
0.13
-
0.23
0.15
0.18
0.13
3.00 BSC
Note
3
4.90 BSC
2.90
3.00
3.10
3
0.70
4
0.50 BSC
2.00 BSC
0.40
0.55
10
0_
4_
5
6_
ECN: T-02080—Rev. C, 15-Jul-02
DWG: 5867
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Revision: 02-Oct-12
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Document Number: 91000