DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D High Accuracy D Simple Logic Interface D Reduce Board Space D D D D D D Low Voltage Operation (+2.7 to +12 V) Low On-Resistance - rDS(on): 14 Low Power Consumption TTL Compatible ESD Protection >2000 V (Method 3015.7) Available in TSSOP-10 (aka MSOP-10) Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Networking Equipment DESCRIPTION The DG9414, a single 4 to 1 multiplexer, and the DG9415, a dual 2 x 1 multiplexer, are monolithic CMOS analog devices designed for high performance low voltage operation. Combining low power, high speed, low on-resistance and small physical size, the DG9414 and DG9415 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. Both the DG9414 and DG9415 are built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 volts. An epitaxial layer prevents latchup. Break-before-make is guaranteed for DG9415. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG9414DQ DG9415DQ NO2 1 10 V+ NO3 2 9 COM NO1 3 8 NO0 EN 4 7 GND 5 6 Logic NO1 1 10 V+ COM1 2 9 COM2 NC1 3 8 NO2 A0 EN 4 7 NC2 A1 GND 5 6 A0 Logic EN A1 A0 ON SWITCH EN A0 ON SWITCH 1 X X None 1 X None 0 0 0 NO0 0 0 0 0 1 NO1 NC1 NC2 0 1 0 NO2 0 1 NO1 NO2 0 1 1 NO3 X = Don’t Care X = Don’t Care ORDERING INFORMATION Temp Range Package -40 40 to 85°C MSOP 10 MSOP-10 Part Number DG9414DQ Document Number: 71766 S-03220—Rev. F, 17-Feb-03 DG9415DQ www.vishay.com 1 DG9414/9415 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA (Pulsed at 1ms, 10% duty cycle) ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Limits -40 to 85_C Tempa Minc VANALOG Full 0 rON Room Full 63 97 101 Room 3 11 Room 14 33 Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.4 Ve Typb Maxc Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Matchd rON Flatnessd, f NO or NC Off Leakage Current g rON rON Flatness INO/NC(off) V+ = 2.7 2 7 V, V VCOM = 1.0 1 0 V/1 V/1.5 5 V/2.0 V/2 0 V INO or INC = 5 mA V+ = 3.3 V, VNO or VNC = 0.3 V / 3 V VCOM = 3 V / 0.3 V Room Full -1 -10 1 10 Room Full -1 -10 1 10 COM Off Leakage Current g ICOM(off) Channel-On Leakage Current g ICOM(on) V+ = 3.3 V VCOM = VNO or VNC = 0.3 V / 3 V Room Full -1 -10 1 10 IINL or IINH VIN = 0 or V+ 1.0 nA Digital Control Input Currentg Full -1.0 Input High Voltaged VINH Full 1.6 Input Low Voltaged VINL Full Turn-On Time tON Room Full 102 125 142 Turn-Off Time tOFF Room Full 45 68 75 0.4 A V Dynamic Characteristics Break-Before-Make Time VNO or VNC = 1.5 V tD Room 7 ttrans VNO = 1.5 V/0 V, VNC = 0 V/1.5 V Room Full Charge Injectiond QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 Room 3 Off-Isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room -58 Channel-to-Channel Crosstalk (DG9415) XTALK RL = 50 , f = 1 MHz Room -64 Transition Time NO NC Off Capacitance NO, CNO(off), CNC(off) COM Off Capacitance CCOM(off) COM( ff) COM On Capacitance CCOM(on) COM( ) f = 1 MHz ns 78 81 DG9414 Room 11 DG9415 Room 10 DG9414 Room 26 DG9415 Room 13 DG9414 Room 43 DG9415 Room 25 128 144 pC dB pF Power Supply Power Supply Range V+ Power Supply Currenth I+ 2.7 V+ = 3.3 V, VIN = 0 or 3.3 V Full 3.3 V 1.0 A Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12-V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. www.vishay.com 2 Document Number: 71766 S-03220—Rev. F, 17-Feb-03 DG9414/9415 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Limits Test Conditions Otherwise Unless Specified Parameter -40 to 85_C Tempa Minc VANALOG Full 0 rON Room Full 33 56 60 Room 2 10 Room 10 20 Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Typb Maxc Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON rON Match rON V = 4.5 V+ 4 5 V, V VCOM = 1.5 1 5 V/2.5 V/2 5 V/3.5 V/3 5 V INO or INC = 10 mA rON Flatness Flatnessf NO or NC Off Leakage Currentg COM Off Leakage Currentg Channel-On Leakage Currentg INO/NC(off) ICOM(off) V+ = 5.5 V, VNO or VNC = 1 V / 4.5 V VCOM = 4.5 V / 1 V Room Full -1 -10 1 10 Room Full -1 -10 1 10 -1 -10 1 10 1.0 ICOM(on) V+ = 5.5 V, VCOM = VNO or VNC = 1 V / 4.5 V Room Full IINL or IINH VIN = 0 or V+ nA Digital Control Input Currenth Full -1.0 Input High Voltaged VINH Full 1.8 Input Low Voltaged VINL Full Turn-On Timeh tON Room Full 56 77 86 Turn-Off Timeh tOFF Room Full 25 46 50 0.6 A V Dynamic Characteristics Break-Before-Make Timeh VNO or VNC = 3.0 V tD Room Transition Time ttrans VNO = 3 V/0 V, VNC = 0 V/3 V Room Full 47 Off-Isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room -58 Channel-to-Channel Crosstalk (DG9415) XTALK RL = 50 , f = 1 MHz Room -64 QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 Charge Injectiond NO NC Off Capacitance NO, CNO(off), CNC(off) COM Off Capacitance CCOM(off) COM( ff) COM On Capacitance CCOM(on) COM( ) f = 1 MHz 7 ns 34 Room 6 DG9414 Room 11 DG9415 Room 10 DG9414 Room 25 DG9415 Room 13 DG9414 Room 42 DG9415 Room 24 77 84 ns dB pC pF Power Supply Power Supply Range Power Supply Currenth V+ I+ 4.5 V+ = 5.5 V, VIN = 0 or 5.5 V Full 5.5 V 1.0 A Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12-V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. Document Number: 71766 S-03220—Rev. F, 17-Feb-03 www.vishay.com 3 DG9414/9415 Vishay Siliconix SPECIFICATIONS (V+ = 12 V) Limits Test Conditions Unless Specified Parameter V = 12 V, V+ V VIN = 0.8 V, V 2.4 Ve -40 to 85_C Tempa Minc VANALOG Full 0 rON Room 1 9 rON Flatness Room 1 10 rON Room Full 14 17 19 Symbol Typb Maxc Unit 12 V Analog Switch Analog Signal Ranged rON Match rON Flatnessd, f On-Resistance Switch Off Leakage Current Channel On Leakage Current INO(off), INC(off) ICOM(off) V+ = 10.8 V, INO, INC = 25 mA, VCOM = 2/9 V VCOM = 1/11 V VNO, VNC = 11/1 V Room Full -1 -10 1 10 Room Full -1 -10 1 10 -1 -10 1 10 1 ICOM(on) VNO, VNC = VCOM = 11/1 V Room Full IINL or IINH VIN = 0 or V+ nA Digital Control Input Current Full -1 Input High Voltaged VINH Full 2.4 Input Low Voltaged VINL Full 0.8 A V Dynamic Characteristics Turn-On Timeh tON Turn-Off Timeh tOFF RL = 300 , CL = 35 pF VNO, VNC = 5 V See Figure 2 Room Full 33 55 59 Room Full 17 40 41 ns tD DG419L Only, VNC, VNO = 5 V RL = 300 , CL = 35 pF Room ttrans VNO = 5 V/0 V, VNC = 0 V/5 V Room Full Charge Injectiond QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 13 Off Isolationd OIRR -58 Channel-to-Channel Crosstalkd XTALK RL = 50 , CL = 5 pF f = 1 MHz Room Room -64 DG9414 Room 10 DG9415 Room 10 DG9414 Room 24 DG9415 Room 13 DG9414 Room 40 DG9415 Room 23 Break-Before-Make Time Delayh Transition Time NO NC Off Capacitanced NO, CNO(off), CNC(off) COM Off Capacitance CCOM(off) COM( ff) COM On Capacitanced COM(on) OM( ) VIN = 0 or V+, V+ f = 1 MHz 2 24 29 56 59 pC dB pF Power Supplies Positive Supply Current I+ VIN = 0 or 12 V Full 1 A Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12-V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. www.vishay.com 4 Document Number: 71766 S-03220—Rev. F, 17-Feb-03 DG9414/9415 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 80 80 A = 85_C B = 25_C C = -40_C T = 25_C 70 r ON - On-Resistance ( ) r ON - On-Resistance ( ) 70 60 V+ = 3.0 V IS = 5 mA 50 40 V+ = 5.0 V IS = 10 mA 30 V+ = 12.0 V IS = 25 mA 20 60 V+ = 3.0 V IS = 5 mA 50 A 40 B C V+ = 12.0 V IS = 25 mA B A A 30 B C 20 10 10 0 C 0 0 3 6 9 12 0 2 4 VCOM - Analog Voltage (V) 6 8 10 12 VCOM - Analog Voltage (V) Supply Current vs. Input Switching Frequency Supply Current vs. Temperature 10 m 10000 VAX, VEN = 0 V 1m I+ - Supply Current (nA) I+ - Supply Current (nA) V+ = 5.0 V IS = 10 mA 1000 100 V+ = 12.0 V 100 10 1 100 n V+ = 5.0 V 10 V+ = 12 V 10 n 1 -60 -40 -20 0 20 40 60 80 1n 10 100 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Temperature (_C) Leakage Current vs. Temperature Leakage vs. Analog Voltage 1000 100 V+ = 12 V V+ = 12.0 V Leakage Current (pA) Leakage Current (pA) 60 100 ICOM(on) ICOM(off) INO(off), INC(off) 10 ICOM(off) 20 -20 INO(off)/INC(off) ICOM(on) -60 1 -60 -100 -40 -20 0 20 40 Temperature (_C) Document Number: 71766 S-03220—Rev. F, 17-Feb-03 60 80 100 0 2 4 6 8 10 12 VCOM, VNO, VNC - Analog Voltage (V) www.vishay.com 5 DG9414/9415 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transistion Time vs. Temperature (DG9414) Transistion Time vs. Temperature (DG9415) 120 100 120 tTRANS- V+ = 3 V 100 tTRANS- V+ = 3 V 80 tTRANS+ V+ = 3 V 80 tTRANS+ V+ = 3 V 60 60 tTRANS+ V+ = 5 V tTRANS- V+ = 5 V tTRANS- V+ = 5 V 40 tTRANS+ V+ = 12 V tTRANS+ V+ = 12 V tTRANS- V+ = 12 V 20 0 -60 -40 -20 0 20 40 60 80 tTRANS- V+ = 12 V 20 0 -60 100 -40 -20 0 Temperature (_C) 20 40 60 80 100 Temperature (_C) Insertion Loss, Off -Isolation Crosstalk vs. Frequency (DG9414) Switching Time vs. Temperature 140 10 120 100 80 60 Loss -10 tON V+ = 3 V tON V+ = 5 V tOFF V+ = 3 V 40 tON V+ = 12 V 20 Loss, OIRR, X TALK (dB) t ON , t OFF - Switching Time (ns) tTRANS+ V+ = 5 V 40 -30 -50 XTALK OIRR V+ = 12 V RL = 50 -70 tOFF V+ = 5 V tOFF V+ = 12 V 0 -60 -90 -40 -20 0 20 40 60 80 100 100 k 1M 10 M Insertion Loss, Off -Isolation Crosstalk vs. Frequency (DG9415) Switching Threshold vs. Supply Voltage 2.5 VT - Switching Threshold (V) Loss, OIRR, X TALK (dB) Loss -30 XTALK OIRR -50 V+ = 12 V RL = 50 -70 -90 100 k 6 2.0 1.5 1.0 0.5 0.0 1M 10 M Frequency (Hz) www.vishay.com 1G 3.0 10 -10 100 M Frequency (Hz) Temperature (_C) 100 M 1G 2 4 6 8 10 12 14 V+ - Supply Voltage (V) Document Number: 71766 S-03220—Rev. F, 17-Feb-03 DG9414/9415 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Charge Injection vs. Analog Voltage (DG9414) Charge Injection vs. Analog Voltage (DG9415) 50 Q - Charge Injection (pC) Q - Charge Injection (pC) 50 30 V+ = 3 V 10 V+ = 5 V -10 -30 30 V+ = 3 V 10 V+ = 5 V -10 V+ = 12 V -30 V+ = 12 V -50 -50 0 2 4 6 8 10 12 0 2 VCOM - Analog Voltage (V) 4 6 8 10 12 VCOM - Analog Voltage (V) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VLevel Shift/ Drive VIN V+ D GND Figure 1. TEST CIRCUITS V+ Logic Input VINH tr <5 ns tf <5 ns 50% VINL Switch Input VIN Switch Output V+ NO or NC COM tOFF VOUT VOUT IN RL 300 GND CL 35 pF CL (includes fixture and stray capacitance) VOUT = VIN RL Switch Output Note: 90% 0.9 x VOUT 0V tON Logic input waveform is inverted for switches that have the opposite logic sense control RL + rON Figure 2. Switching Time Document Number: 71766 S-03220—Rev. F, 17-Feb-03 www.vishay.com 7 DG9414/9415 Vishay Siliconix TEST CIRCUITS V+ tr <5 ns tf <5 ns VINL COM NO VNO VINH Logic Input V+ VO NC VNC RL 300 IN CL 35 pF VNC = VNO VO GND Switch Output 90% 0V tD tD 50% tr <5 ns tf <5 ns CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make +15 V V+ NO or NC VS1 VS2 Logic VINH Input VINL COM VO NC or NO RL 300 IN tTRANS+ CL 35 pF tTRANS- VS1 V01 GND 90% Switch Output CL (includes fixture and stray capacitance) VS2 V02 10% RL VO = VS RL + rON Figure 4. Transition Time VO V+ VO Rg V+ COM IN Vg NO or NC IN VO OFF CL 1 nF ON OFF Q = VO x CL GND IN dependent on switch configuration Input polarity determined by sense of switch. VIN = 0 - V+ Figure 5. Charge Injection www.vishay.com 8 Document Number: 71766 S-03220—Rev. F, 17-Feb-03 DG9414/9415 Vishay Siliconix TEST CIRCUITS V+ C V+ VS VIN NO or NC COM Rg = 50 50 IN 0 V or 2.4 V NC or NO VOUT GND XTALK Isolation = 20 log VOUT VIN C = RF bypass Figure 6. Crosstalk V+ V+ C C V+ NO or NC COM COM Rg = 50 Meter RL 50 IN 0V, 2.4 V IN 0 V, 2.4 V GND NO or NC GND Off Isolation = 20 log C = RF Bypass Figure 7. Off Isolation Document Number: 71766 S-03220—Rev. F, 17-Feb-03 HP4192A Impedance Analyzer or Equivalent f = 1 MHz VCOM VNO/NC Figure 8. Source/Drain Capacitances www.vishay.com 9