DG9262/9263 New Product Vishay Siliconix Low-Voltage Dual SPST Analog Switch Low Voltage Operation (+2.7 to +5 V) Low On-Resistance - rDS(on): 40 Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC Low Power Consumption TTL/CMOS Compatible ESD Protection > 2000 V (Method 3015.7) Available in TSSOP-8 and SOIC-8 Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems The DG9262/9263 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 40 ) and small physical size, the DG9262/9263 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9262/9263 is built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7 is 2000 V. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9262/9263. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. NC1 1 8 V+ NO1 1 8 V+ COM1 2 7 IN1 COM1 2 7 IN1 IN2 3 6 COM2 IN2 3 6 COM2 GND 4 5 NC2 GND 4 5 NO2 Top View Top View Logic Switch Logic Switch 0 On 0 Off Off 1 1 Logic “0” 0.8 V Logic “1” 2.4 V On Logic “0” 0.8 V Logic “1” 2.4 V Temp Range Package SOIC-8 -40 40 to 85°C TSSOP-8 (3 x 3 mm) Document Number: 70862 S-52434—Rev. A, 13-Sep-99 This Material Copyrighted by Its Respective Manufacturer Part Number DG9262DY DG9263DY DG9262DQ DG9263DQ www.vishay.com FaxBack 408-970-5600 4-1 DG9262/9263 New Product Vishay Siliconix Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA (Pulsed at 1ms, 10% duty cycle) ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C Power Dissipation (Packages)b 8-Pin Narrow Body SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C Test Conditions Otherwise Unless Specified Parameter P Symbol S b l D Suffix –40 to 85_C V+ = 3 V, 10%, VIN = 0.8 or 2.4 Ve a Temp T Minb Typc maxb Unit 3 V Room Full Full 0 50 80 140 Analog Switch Analog Signal Ranged VANALOG rDS(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA rDS(on) Matchd DrDS(on) VNO or VNC = 1.5 V Room 0.4 2 rDS(on) Flatnessd rDS(on) Flatness VNO or VNC = 1 and 2 V Room 4 8 INO/NC(off) VNO or VNC = 1 V / 2 V, VCOM = 2 V / 1 V Room Full -100 –5000 5 100 5000 COM Off Leakage Currentg ICOM(off) VCOM = 1 V / 2 V, VNO or VNC = 2 V / 1 V Room Full -100 –5000 5 100 5000 Channel-On Leakage Currentg ICOM(on) VCOM = VNO or VNC = 1 V / 2 V Room Full -200 –10000 10 200 10000 Drain-Source On-Resistance NO or NC Off Leakage Currentg W pA A Digital Control Input Current mA IINL or IINH Full 1 Turn-On Time tON Room Full 50 120 200 Turn-Off Time tOFF Room Full 20 50 120 Room 1 5 Room –74 Room –90 Dynamic Characteristics VNO or VNC = 1.5 V Charge Injectiond QINJ Off-Isolation OIRR Crosstalk XTALK NC and NO Capacitance C(off) Channel-On Capacitance CCOM(on) Com-Off Capacitance CCOM(off) CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W, CL = 5 pF, f = 1 MHz f = 1 MHz MH Room 7 Room 20 Room 13 ns pC dB pF F Power Supply Power Supply Range V+ Power Supply Current I+ 2.7 V+ = 3.3 V, VIN = 0 or 3.3 V 12 V 1 mA Notes: a. b. c. d. e. f. g. Room = 25°C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values. Guaranteed by 5-V leakage test, not production tested. www.vishay.com S FaxBack 408-970-5600 4-2 This Material Copyrighted by Its Respective Manufacturer Document Number: 70862 S-52434—Rev. A, 13-Sep-99 DG9262/9263 New Product Vishay Siliconix Test Conditions Otherwise Unless Specified D Suffix –40 to 85_C V+ = 5 V, 10%, VIN = 0.8 or 2.4 Ve a Temp T Minb Typc maxb Unit Full 0 rDS(on) VNO or VNC = 3.5 V, V+ = 4.5 V ICOM = 5 mA 5 V Room Full 30 60 75 rDS(on) Matchd DrDS(on) rDS(on) Flatnessf rDS(on) Flatness VNO or VNC = 3.5 V Room 0.4 2 VNO or VNC = 1, 2, and 3 V Room 2 6 NO or NC Off Leakage Current INO/NC(off) VNO or VNC = 1 V / 4 V, VCOM = 4 V / 1 V Room Full -100 –5000 10 100 5000 COM Off Leakage Current ICOM(off) VCOM = 1 V / 4 V, VNO or VNC = 4 V / 1 V Room Full -100 –5000 10 100 5000 Channel-On Leakage Current ICOM(on) VCOM = VNO or VNC = 1 V / 4 V Room Full -200 –10000 Parameter P Symbol S b l Analog Switch Analog Signal Ranged Drain-Source On-Resistance VANALOG W pA A 200 10000 Digital Control Input Current IINL or IINH mA Full 1 Room Full 35 75 150 Room Full 20 50 100 Room 2 5 Room –74 Room –90 Dynamic Characteristics Turn-On Time tON VNO or VNC = 3.0 V Turn-Off Time tOFF Charge Injectiond QINJ Off-Isolation OIRR Crosstalk XTALK NC and NO Capacitance C(off) Channel-On Capacitance CD(on) Com-Off Capacitance CD(off) CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W, CL = 5 pF, f = 1 MHz f = 1 MHz MH Room 7 Room 20 Room 13 ns pC dB pF F Power Supply Power Supply Range V+ Power Supply Current I+ 2.7 V+ = 5.5 V, VIN = 0 or 5.5 V 12 V 1 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values. Document Number: 70862 S-52434—Rev. A, 13-Sep-99 This Material Copyrighted by Its Respective Manufacturer www.vishay.com S FaxBack 408-970-5600 4-3 DG9262/9263 New Product Vishay Siliconix _ Charge Injection Supply Current vs. VIN 3000 2.0 V+ = 3 V 1.5 2500 1.0 I SUPPLY ( m A) 2000 Q INJ (pC) 0.5 0.0 –0.5 1500 V+ = 5 V 1000 500 –1.0 –1.5 0 –2 –500 V+ = 3 V 0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 VCOM Leakage Current vs. Temperature 5 Off-Isolation vs. Frequency –40 1 nA –60 OFF-Isolation (dB) I COM(off) (A) 4 VIN 10 nA 100 pA ICOM(off) 10 pA 3 ICOM(on) 1 pA –80 –100 –120 0.1 pA –140 25 45 65 85 105 125 0.001 M 0.01 M Temperature (_C) 1M 10 M Frequency (Hz) Off-Leakage vs. Voltage @ 25_C rDS vs. VCOM 80 2.5 2.0 0.1 M V+ = 5 V 1.5 V+ = 3 V 60 ICOM 0.5 r DS(on) ( W ) I OFF (pA) 1.0 0.0 –0.5 INO/NC 40 V+ = 5 V –1.0 20 –1.5 –2.0 –2.5 0 0 1 2 3 VCOM www.vishay.com S FaxBack 408-970-5600 4-4 This Material Copyrighted by Its Respective Manufacturer 4 5 0 1 2 3 4 5 VCOM Document Number: 70862 S-52434—Rev. A, 13-Sep-99 DG9262/9263 New Product Vishay Siliconix _ rDS vs. VCOM Switching Time vs. Temperature 80 70 V+ = 3 V 60 85_C tON 50 t ON / t OFF (nsec) r DS(on) ( ) 60 25_C 40_C 40 20 40 30 tOFF 20 10 0 0 0.5 1.0 1.5 2.0 2.5 0 –60 3.0 –30 0 VCOM 30 60 90 120 Temperature (_C) tON/tOFF vs. Power Supply Voltage Input Switching Point vs. Power Supply Voltage 120 2.25 100 2.00 1.75 V IN (sw) T (nsec) 80 60 1.50 1.25 tON 40 1.00 tOFF 20 0 1.5 0.75 0.5 2.0 2.5 3.0 3.5 V+ Document Number: 70862 S-52434—Rev. A, 13-Sep-99 This Material Copyrighted by Its Respective Manufacturer 4.0 4.5 5.0 2 3 4 5 6 V+ www.vishay.com S FaxBack 408-970-5600 4-5 DG9262/9263 New Product Vishay Siliconix V+ +3V Logic Input V+ 0V Switch Output COM NO or NC Switch Input tr t 20 ns tf t 20 ns 50% VOUT 0.9 x VOUT IN Logic Input RL 300 W GND CL 35 pF Switch Output 0V tOFF tON 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ Ǔ RL R L ) R ON FIGURE 1. Switching Time V+ Logic Input V+ V1 NO or NC COM1 NO or NC COM2 V2 3V tr <5 ns tf <5 ns 0V RL 300 W CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen DVOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL 3V IN On On Off GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection www.vishay.com FaxBack 408-970-5600 4-6 This Material Copyrighted by Its Respective Manufacturer Document Number: 70862 S-52434—Rev. A, 13-Sep-99 DG9262/9263 New Product Vishay Siliconix V+ 10 nF V+ COM 0V, 2.4 V IN COM NC or NO Off Isolation + 20 log RL GND VNCńNO VCOM Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz FIGURE 5. Channel Off/On Capacitance Document Number: 70862 S-52434—Rev. A, 13-Sep-99 This Material Copyrighted by Its Respective Manufacturer www.vishay.com FaxBack 408-970-5600 4-7