BUK7L11-34ARC N-channel TrenchPLUS standard level FET Rev. 05 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Reduced component count due to integrated gate resistor Q101 compliant 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions [1] [2] Min Typ Max Unit - - 89 A ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 172 W VGS = 10 V; ID = 30 A; Tj = 25 °C; see Figure 14; see Figure 6 - 8 11 mΩ Static characteristics RDSon drain-source on-state resistance [1] Current is limited by power dissipation chip rating. [2] Refer to document 9397 750 12572 for further information. BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol mb D G S mbl521 1 2 3 SOT78C (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK7L11-34ARC TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads BUK7L11-34ARC_5 Product data sheet Version SOT78C © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 2 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C [1] VDGR drain-gate voltage RGS = 20 kΩ [1] VGS gate-source voltage ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Min Max Unit - 34 V - 34 V -20 20 V [2][3] - 89 A [4] - 75 A Tmb = 100 °C; VGS = 10 V; see Figure 1 - 63 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 358 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 172 W IDG(CL) drain-gate clamping current pulsed; tp = 5 ms; δ = 0.01 - 50 mA IGS(CL) gate-source clamping current - 50 mA - 10 mA continuous Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C [2][3] - 89 A [4] - 75 A tp ≤ 10 µs; pulsed; Tmb = 25 °C - 358 A ID = 60 A; VDS ≤ 34 V; VGS = 10 V; RGS = 50 Ω; unclamped; Tj(init) = 25 °C - 465 mJ HBM; C = 250 pF; R = 1.5 kΩ - 6 kV HBM; C = 100 pF; R = 1.5 kΩ - 8 kV Source-drain diode IS ISM source current Tmb = 25 °C peak source current Avalanche ruggedness EDS(CL)S non-repetitive drain-source clamping energy Electrostatic discharge Vesd electrostatic discharge voltage [1] Voltage is limited by clamping. [2] Current is limited by power dissipation chip rating. [3] Refer to document 9397 750 12572 for further information. [4] Continuous current is limited by package. BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 3 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 03nj52 100 ID (A) 03na19 120 Pder (%) 80 (1) 80 60 40 40 20 0 0 0 50 100 150 200 0 50 100 Tmb (°C) 150 200 Tmb (°C) (1) Capped at 75 A due to package Fig 1. Fig 2. Normalized continuous drain current as a function of mounting base temperature Normalized total power dissipation as a function of mounting base temperature 03nj50 103 ID (A) tp = 10 μ s Limit RDSon = VDS / ID 102 100 μ s (1) 1 ms 10 ms DC 10 100 ms 1 1 10 102 VDS (V) (1) Capped at 75 A due to package Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 4 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient vertical in free air - 60 - K/W Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.55 0.87 K/W 03nj51 1 δ = 0.5 Zth(j-mb) (K/W) 0.2 0.1 10-1 0.05 0.02 δ= P 10-2 tp T single shot t tp T 10-3 10-6 Fig 4. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 5 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit Static characteristics drain-gate (Zener diode) breakdown voltage ID = 1 mA; VGS = 0 V; Tj = 25 °C 34 - 45 V ID = 1 mA; VGS = 0 V; Tj = -55 °C 34 - 45 V VDS(CL) drain-source clamping voltage IGS(CL) = -2 mA; ID = 1 A; Tj = 25 °C; see Figure 12; see Figure 18 - 41 - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 13; see Figure 7 2.2 3 3.8 V ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 13; see Figure 7 1.5 - - V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 13; see Figure 7 1.2 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 13; see Figure 7 - - 4.2 V VDS = 16 V; VGS = 0 V; Tj = 25 °C - 0.1 2 µA VDS = 16 V; VGS = 0 V; Tj = 150 °C - 3 50 µA VDS = 16 V; VGS = 0 V; Tj = 175 °C - 18 250 µA gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C; voltage Tj < 175 °C; see Figure 18; see Figure 19 20 22 - V IG = -1 mA; VDS = 0 V; Tj > -55 °C; Tj < 175 °C; see Figure 18; see Figure 19 20 22 - V VDS = 0 V; VGS = 10 V; Tj = 25 °C - 5 1000 nA VDS = 0 V; VGS = -10 V; Tj = 25 °C - 5 1000 nA VDS = 0 V; VGS = 10 V; Tj = 175 °C - - 50 µA VDS = 0 V; VGS = -10 V; Tj = 175 °C - - 50 µA V(BR)DG IDSS V(BR)GSS IGSS RDSon RG drain leakage current gate leakage current drain-source on-state resistance VDS = 0 V; VGS = 16 V; Tj = 175 °C - - 150 µA VGS = 10 V; ID = 30 A; Tj = 25 °C; see Figure 14; see Figure 6 - 8 11 mΩ VGS = 10 V; ID = 30 A; Tj = 175 °C; see Figure 14; see Figure 6 - - 20.9 mΩ VGS = 16 V; ID = 30 A; Tj = 25 °C - 7 9.7 mΩ - 11 - Ω - 53 - nC - 11 - nC - 20 - nC internal gate resistance f = 1 MHz; Tj = 25 °C (AC) Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance ID = 25 A; VDS = 27 V; VGS = 10 V; Tj = 25 °C; see Figure 16 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 17 BUK7L11-34ARC_5 Product data sheet - 1880 2506 pF - 640 768 pF - 400 548 pF © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 6 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 20 - ns tr rise time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 92 - ns td(off) turn-off delay time - 127 - ns tf fall time - 118 - ns LD internal drain inductance measured from contact screw on mounting base to centre of die; Tj = 25 °C - 3.5 - nH measured from drain lead 6 mm from package to centre of die; Tj = 25 °C - 4.5 - nH measured from source lead to source bond pad; Tj = 25 °C - 7.5 - nH LS internal source inductance Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 15 - 0.85 1.2 V trr reverse recovery time - 52 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V; Tj = 25 °C - 28 - nC BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 7 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 03nj47 400 20 ID (A) 16 RDSon (mΩ) 14 25 12 300 VGS (V) = 10 9.5 9 8.5 8 200 20 15 7.5 7 6.5 6 5.5 5 4.5 100 0 0 Fig 5. 03nj46 30 2 4 10 5 6 8 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values 03nh87 10-1 ID (A) 5 10 Fig 6. 10 min 10-3 typ 20 03nj57 42.0 Tj = 175 °C 41.5 max VGS (V) Drain-source on-state resistance as a function of gate-source voltage; typical values VDSR(CL) (V) 10-2 15 Tj = 25 °C Tj = -55 °C 10-4 41.0 10-5 10-6 40.5 0 Fig 7. 2 4 VGS (V) 6 Sub-threshold drain current as a function of gate-source voltage 0 Fig 8. 4 6 8 ID (A) 10 Drain-source clamping voltage as a function of drain current; typical values BUK7L11-34ARC_5 Product data sheet 2 © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 8 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 03nj48 25 RDSon (mΩ) 5 6 7 8 gfs (S) 10 20 30 15 20 10 10 VGS (V) = 20 5 0 0 Fig 9. 03nj44 40 100 200 300 ID (A) 400 Drain-source on-state resistance as a function of drain current; typical values 03nj45 100 ID (A) 0 20 40 60 ID (A) 80 Fig 10. Forward transconductance as a function of drain current; typical values 03nj56 43 VDSR(CL) (V) Tj = 175 °C 80 Tj = 25 °C 42 Tj = -55 °C 60 41 40 40 20 Tj = 175 °C Tj = 25 °C 0 39 0 2 4 6 VGS (V) 8 0 2 3 -IGS(CL) (mA) Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 12. Drain-source clamping voltage as a function of gate-source clamping current; typical values BUK7L11-34ARC_5 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 9 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 03nh86 5 VGS(th) (V) max 03aa27 2 a 4 1.5 typ 3 min 1 2 0.5 1 0 -60 0 60 120 180 Tj (°C) Fig 13. Gate-source threshold voltage as a function of junction temperature 03nj42 100 IS (A) 0 -60 0 60 120 180 Fig 14. Normalized drain-source on-state resistance factor as a function of junction temperature 03nj43 10 VGS (V) 80 8 60 6 40 4 VDD = 14 V Tj = 175 °C 20 0 0.0 Tj (°C) Tj = 25 °C VDD = 27 V 2 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) Fig 15. Source current as a function of source-drain voltage; typical values 0 40 QG (nC) 60 Fig 16. Gate-source voltage as a function of gate charge; typical values BUK7L11-34ARC_5 Product data sheet 20 © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 10 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 03nj49 4000 003aab215 10-1 IG (A) C (pF) 3000 10-2 Ciss Coss 10-3 2000 Crss 10-4 1000 0 10-1 1 10 VDS (V) 10-5 102 20 22 24 26 28 30 32 V(BR)GSS (V) Fig 18. Source-gate clamping current as a function of source-gate clamping voltage; typical values Fig 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aab216 1.03 a 1.02 1.01 1 0.99 0.98 -100 -50 0 50 100 150 200 Tj (°C) Fig 19. Normalized source-gate clamping voltage as a function of junction temperature; typical values BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 11 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C E A p A1 mounting base q D1 q1 D q2 L1 L Q b1 1 2 3 b c e e1 H 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e e1 H L L1 p Q q q1 q2 mm 4.58 4.31 1.33 1.21 0.87 0.76 1.33 1.21 0.44 0.33 15.07 14.80 6.47 6.22 10.40 10.00 2.64 2.44 5.16 5.00 6.03 5.76 14.00 13.50 6.10 5.58 3.90 3.78 2.72 2.40 2.95 2.69 3.80 3.42 12.40 12.00 Notes 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78C REFERENCES IEC JEDEC JEITA 3-lead TO-220 EUROPEAN PROJECTION ISSUE DATE 01-12-11 03-01-21 Fig 20. Package outline SOT78C (TO-220) BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 12 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7L11-34ARC_5 20090217 Product data sheet - BUK7L11-34ARC_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. BUK7L11-34ARC_4 20051216 Product data sheet - BUK7L11_34ARC-03 BUK7L11_34ARC-03 (9397 750 12163) 20031203 Product data sheet - BUK7L11_34ARC-02 BUK7L11_34ARC-02 (9397 750 11472) 20030522 Product data sheet - BUK7L11_34ARC-01 BUK7L11_34ARC-01 (9397 750 11178) 20030423 Product data sheet - - BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 13 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK7L11-34ARC_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 17 February 2009 14 of 15 BUK7L11-34ARC NXP Semiconductors N-channel TrenchPLUS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: Rev. 05 — 17 February 2009 Document identifier: BUK7L11-34ARC_5