A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7
A p p li c a t i o n N o t e N o . 1 2 2
I n f i n e on ’ s B F P 7 4 0 F U l tr a L ow N o i s e R F
T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e
Amplifier Application
R F & P r o t e c ti o n D e v i c e s
Edition 2007-08-30
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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Application Note No. 122
Application Note No. 122
Revision History: 2007-08-30, Rev. 1.2
Previous Version: 2007-02-14, Rev. 1.1
Page
Subjects (major changes since last revision)
All
Change of layout
Application Note
3
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
1
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz
SDARS Low Noise Amplifier Application
Applications
•
LNA stage for Satellite Digital Audio Radio Service "SDARS" active antennas, e.g. 2320 - 2332.5 MHz
"SIRIUS" or 2332.5 - 234 MHz "XM Radio".
Overview
•
•
The Infineon Technologies Silicon-Germanium-Carbon BFP740F HBT RF Transistor in TSFP-4 package is
shown in a +3.0 V 2.33 GHz LNA application. Amplifier draws 8.9 mA. +5 V power supply can be used if bias
resistor values are changed.
Transistor package size is 1.4 x 1.2 x 0.55 mm including external leads (RoHS compliant package).
Specification Targets
Summary of Results
(T =25 °C, Network Analyzer Source Power = -30 dBm, VCC = 3.0 V, VCE = 2.6 V, I = 8.9 mA)
Table 1
Summary of Results
Frequency
MHz
dB[s11]² dB[s21]² dB[s12]² dB[s22]² NF1)
dB
IIP3
OIP3
IP1dB
OP1dB
dBm
dBm
dBm
dBm
2320
10.6
18.9
24.9
10.7
0.64
---
---
---
---
2332
10.8
18.8
24.8
10.4
0.65
+9.7
+28.5
-12.0
+5.8
2345
10.9
18.8
24.8
10.2
0.64
---
---
---
---
1) PCB loss is not extracted. If PCB loss were extracted, NF would be approximately 0.1 dB lower.
Cross Sectional Diagram of PC Board (standard FR4 material)
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Figure 1
PCB Cross Section
Application Note
4
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Schematic Diagram
Total Parts Count = 11 pieces, including BFR740F Transistor.
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Figure 2
Schematic Diagram
Application Note
5
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Details on TSFP-4 Package. Dimensions in millimeters (mm)
0.2 ±0.05
1
3
1.2 ±0.05
0.2 ±0.05
4
0.55 ±0.04
2
0.2 ±0.05
10˚ MAX.
0.8 ±0.05
1.4 ±0.05
0.15 ±0.05
0.5 ±0.05
0.5 ±0.05
Figure 3
GPX01010
Package Outline TSLP-4
0.9
0.45
0.35
0.5
0.5
HLGF1011
Figure 4
Footpint for TSLP-4
Application Note
6
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Noise Figure, Plot, 2132.5 to 2532.5 MHz. Center of Plot (x-axis) is 2332.5 MHz.
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Figure 5
Plot of Noise Figure (2132.5 - 2532.5 MHz)
Application Note
7
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Noise Figure, Tabular Data
2 GHz - 4 GHz
From Rhode & Schwarz FSEK3+ FSEM30
System Preamplifier = MITEQ SMC-02
Table 2
Noise Figure
Frequency
Noise Figure
Temp
2132.5 MHz
0.64 dB
46.4 K
2145.0 MHz
0.63 dB
45.5 K
2157.5 MHz
0.65 dB
47.2 K
2170.0 MHz
0.64 dB
45.7 K
2182.5 MHz
0.66 dB
47.3 K
2195.0 MHz
0.65 dB
46.9 K
2207.7 MHz
0.67 dB
48.0 K
2220.0 MHz
0.63 dB
45.6 K
2232.5 MHz
0.64 dB
46.4 K
2245.0 MHz
0.64 dB
45.9 K
2257.5 MHz
0.65 dB
46.6 K
2270.0 MHz
0.64 dB
46.3 K
2282.5 MHz
0.64 dB
46.1 K
2295.0 MHz
0.65 dB
46.9 K
2307.5 MHz
0.65 dB
46.9 K
2320.0 MHz
0.64 dB
46.0 K
2332.5 MHz
0.65 dB
46.5 K
2345.0 MHz
0.64 dB
45.7 K
2357.5 MHz
0.67 dB
48.2 K
2370.0 MHz
0.64 dB
46.3 K
2382.5 MHz
0.65 dB
46.8 K
2395.0 MHz
0.62 dB
44.8 K
2407.5 MHz
0.66 dB
47.8 K
2420.0 MHz
0.66 dB
47.4 K
2432.5 MHz
0.65 dB
47.0 K
2445.0 MHz
0.66 dB
47.2 K
2457.5 MHz
0.67 dB
48.2 K
2470.0 MHz
0.64 dB
45.9 K
2482.5 MHz
0.67 dB
48.2 K
2495.0 MHz
0.65 dB
47.2 K
2507.5 MHz
0.66 dB
47.3 K
2520.0 MHz
0.67 dB
48.1 K
2532.5 MHz
0.69 dB
49.7 K
Application Note
8
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Scanned Image of PC Board
Figure 6
Image of PC Board
Application Note
9
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Scanned Image of PC Board, Close-In Shot
Figure 7
Image of PC Board, Close-In Shot
Application Note
10
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Gain Compression at 2332 MHz (curve x-axis is LNA output power)
Amplifier is checked for 1 dB compression point at VCC = 3.0 V, IC = 8.9 mA (with VCE = 2.6 V). An Agilent power
meter was used to ensure accurate power levels are measured (as opposed to using Vector Network Analyzer in
"Power Sweep" mode).
Output P1dB ≅ +5.8 dBm; Input P1dB = +5.8 dBm - (Gain - 1 dB) = +5.8 dBm -17.8 dB = -12.0 dBm
Table 3
Gain Compression, Tabular Data
POUT, dBm
Gain, dB
-4.0
18.8
-3.0
18.8
-2.0
18.8
-1.0
18.8
0.0
18.8
+1.0
18.8
+2.0
18.7
+3.0
18.6
+4.0
18.5
+5.0
18.3
+6.0
18.6
+7.0
18.7
Application Note
11
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
$1BSORWBJDLQBFRPSYVG
Figure 8
Plot of Gain Compression
PLEASE NOTE - All plots are from Rohde and Schwarz ZVC Network Analyzer, T = 25 °C,
SOURCE POWER ≈ -30 dBm, VCC = 3.0 V, I = 9.0 mA
Application Note
12
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Amplifier Stability
T = 25 °C, VCC = 3.0 V, VCE = 2.6 V, I = 8.9 mA
Stability Factor "K" shown below from "screen shot" taken from Rohde and Schwarz ZVC network analyzer. ZVC
Vector Network Analyzer calculates and plots K in real time, from measured S parameters. Note, minimum K value
is ~ 0.97 at 2.5 GHz, which is ≈ 1, for practical purposes; => amplifier is unconditionally stable over 5 MHz to 8 GHz
ranges
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Stabilty Factor K(f)
Application Note
13
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Input Return Loss, Log Mag
5 MHz to 8 GHz Sweep
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Plot of Input Return Loss (5 MHz - 8 GHz)
Application Note
14
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Input Return Loss, Smith Chart
Reference Plane = Input SMA Connector on PC Board
5 MHz to 8 GHz Sweep
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Smith Chart of Input Return Loss (5 MHz - 8 GHz)
Application Note
15
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Forward Gain
5 MHz to 8 GHz Sweep
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Plot of Forward Gain (5 MHz - 8 GHz)
Application Note
16
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Reverse Isolation
5 MHz to 8 GHz
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Plot of Reverse Isolation (5 MHz - 8 GHz)
Application Note
17
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Output Return Loss, Log Mag
5 MHz to 8 GHz
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Plot of Output Return Loss (5 MHz - 8 GHz)
Application Note
18
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Output Return Loss, Smith Chart
Reference Plane = Output SMA Connector on PC Board
5 MHz to 8 GHz Sweep
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Smith Chart of Output Return Loss (5 MHz - 8 GHz)
Application Note
19
Rev. 1.2, 2007-08-30
Application Note No. 122
Infineon’s BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low
Two-Tone Test, 2331.5 MHz
Input Stimulus for Amplifier Two-Tone Test:
f1 = 2331 MHz, f2 = 2332 MHz, -20 dB each tone
Input IP3 = -20 + (59.3 / 2) = +9.7 dBm
Output IP3 = +9.7 dBm + 18.8 dB gain = +28.5 dBm
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Figure 16
Tow-Tone Test @ 2331.5 MHz
Application Note
20
Rev. 1.2, 2007-08-30