Si9435BDY Datasheet

Si9435BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.042 at VGS = - 10 V
- 5.7
0.055 at VGS = - 6 V
- 5.0
0.070 at VGS = - 4.5 V
- 4.4
- 30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SO-8
S
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
D
Ordering Information: Si9435BDY-T1-E3 (Lead (Pb)-free)
Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 4.1
- 4.6
- 3.2
- 30
- 2.3
- 1.1
2.5
1.3
1.6
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 5.7
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
70
95
24
30
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72245
S09-0870-Rev. D, 18-May-09
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Si9435BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.a
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistance
b
b
Forward Transconductance
Diode Forward Voltage
b
- 3.0
V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
-5
RDS(on)
VDS ≤ - 10 V, VGS = - 10 V
- 20
VDS ≤ - 5 V, VGS = - 4.5 V
-5
µA
A
VGS = - 10 V, ID = - 5.7 A
0.033
0.042
VGS = - 6 V, ID = - 5 A
0.043
0.055
0.070
VGS = - 4.5 V, ID = - 4.4 A
0.056
gfs
VDS = - 15 V, ID = - 5.7 A
13
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.1
16
24
VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A
2.3
Ω
S
V
a
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
4.5
Gate Resistance
Rg
8.8
td(on)
14
25
14
25
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
IF = - 1.2 A, dI/dt = 100 A/µs
nC
Ω
42
70
30
50
30
60
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72245
S09-0870-Rev. D, 18-May-09
Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 10 V thru 6 V
5V
25
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
4V
10
20
15
10
TC = 125 °C
5
5
25 °C
3V
- 55 °C
0
0
0
1
2
3
4
0
5
1
4
5
Transfer Characteristics
Output Characteristics
1100
0.15
880
C - Capacitance (pF)
0.12
0.09
VGS = 4.5 V
0.06
VGS = 6 V
Ciss
660
440
Coss
220
0.03
VGS = 10 V
Crss
0
0.00
0
4
8
12
16
0
20
5
10
20
25
30
Capacitance
On-Resistance vs. Drain Current
1.6
10
VGS = 10 V
ID = 5.7 A
VDS = 15 V
ID = 3.5 A
1.4
R DS(on) - On-Resistance
(Normalized)
8
6
4
1.2
1.0
0.8
2
0
0.0
15
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
3
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
2
3.2
6.4
9.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72245
S09-0870-Rev. D, 18-May-09
12.8
16.0
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
50
1
0.0
TJ = 25 °C
TJ = 150 °C
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.16
ID = 5.7 A
0.12
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
8
10
On-Resistance vs. Gate-to-Source Voltage
0.6
150
0.4
120
ID = 250 µA
0.2
90
Power (W)
V GS(th) Variance (V)
6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.0
60
- 0.2
- 0.4
- 50
4
30
- 25
0
25
50
75
100
125
0
10- 3
150
10- 2
10-1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
1
0.1
10 ms
100 ms
1s
10 s
TC = 25 °C
Single Pulse
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Foot
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Document Number: 72245
S09-0870-Rev. D, 18-May-09
Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72245.
Document Number: 72245
S09-0870-Rev. D, 18-May-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000