Si9435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) Si9435BDY—E3 (Lead (Pb)-Free) Si9435BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −5.7 −4.1 −4.6 −3.2 IDM −30 −2.3 −1.1 2.5 1.3 1.6 0.8 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 95 24 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72245 S-50153—Rev. C, 31-Jan-05 www.vishay.com 1 Si9435BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1.0 IGSS Typa Max Unit −3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = −30 V, VGS = 0 V −1 VDS = −30 V, VGS = 0 V, TJ = 70_C −5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On State Drain Currentb On-State ID(on) D( ) Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb rDS(on) VDS v −10 V, VGS = −10 V −20 VDS v −5 V, VGS = −4.5 V −5 mA A VGS = −10 V, ID = −5.7 A 0.033 0.042 VGS = −6 V, ID = −5 A 0.043 0.055 VGS = −4.5 V, ID = −4.4 A 0.056 0.070 gfs VDS = −15 V, ID = −5.7 A 13 VSD IS = −2.3 A, VGS = 0 V −0.8 −1.1 16 24 W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 8.8 td(on) 14 25 tr 14 25 42 70 30 50 30 60 Turn-On Delay Time Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDS = −15 V, VGS = −10 V, ID = −3.5 A VDD = −15 15 V, RL = 15 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W IF = −1.2 A, di/dt = 100 A/ms 2.3 nC W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72245 S-50153—Rev. C, 31-Jan-05 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 6 V 5V 25 I D − Drain Current (A) I D − Drain Current (A) 25 20 15 4V 10 20 15 10 TC = 125_C 5 5 25_C 3V 0 0 1 2 3 4 0 5 1 VDS − Drain-to-Source Voltage (V) 2 0.12 880 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 1100 0.09 VGS = 4.5 V VGS = 6 V 0.03 4 5 Capacitance 0.15 0.06 3 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Ciss 660 440 Coss 220 VGS = 10 V Crss 0.00 0 0 4 8 12 16 20 0 5 ID − Drain Current (A) Gate Charge 20 25 30 On-Resistance vs. Junction Temperature VDS = 15 V ID = 3.5 A VGS = 10 V ID = 5.7 A 6 4 2 0 0.0 15 1.6 rDS(on) − On-Resiistance (Normalized) 8 10 VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) −55_C 0 1.4 1.2 1.0 0.8 3.2 6.4 9.6 12.8 Qg − Total Gate Charge (nC) Document Number: 72245 S-50153—Rev. C, 31-Jan-05 16.0 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 50 TJ = 150_C 10 TJ = 25_C 1 0.0 0.16 0.12 ID = 5.7 A 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD − Source-to-Drain Voltage (V) Threshold Voltage 8 10 150 120 0.4 ID = 250 mA 0.2 90 Power (W) V GS(th) Variance (V) 6 Single Pulse Power, Junction-to-Ambient 0.6 0.0 60 −0.2 −0.4 −50 4 VGS − Gate-to-Source Voltage (V) 30 −25 0 25 50 75 100 125 0 10−3 150 10−2 TJ − Temperature (_C) 10−1 1 10 Time (sec) Safe Operating Area, Junction-to-Foot 100 *Limited by rDS(on) I D − Drain Current (A) 10 1 ms 1 0.1 10 ms 100 ms 1s 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 72245 S-50153—Rev. C, 31-Jan-05 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 1 Square Wave Pulse Duration (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72245. Document Number: 72245 S-50153—Rev. C, 31-Jan-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1