DINTEK DTM9435

DT.
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P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.042 at VGS = - 10 V
- 5.7
0.055 at VGS = - 6 V
- 5.0
0.070 at VGS = - 4.5 V
- 4.4
- 30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
5
D
G
4
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Steady State
10 s
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 4.1
- 4.6
- 3.2
- 30
- 2.3
A
- 1.1
2.5
1.3
1.6
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 5.7
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
70
95
24
30
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72245
S09-0870-Rev. D, 18-May-09
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.a
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Gate Threshold Voltage
Drain-Source On-State
Forward
Resistanceb
Transconductanceb
Diode Forward
Voltageb
- 3.0
V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
-5
RDS(on)
VDS ≤ - 10 V, VGS = - 10 V
- 20
VDS ≤ - 5 V, VGS = - 4.5 V
-5
µA
A
VGS = - 10 V, ID = - 5.7 A
0.033
0.042
VGS = - 6 V, ID = - 5 A
0.043
0.055
0.070
VGS = - 4.5 V, ID = - 4.4 A
0.056
gfs
VDS = - 15 V, ID = - 5.7 A
13
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.1
16
24
VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A
2.3
Ω
S
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
4.5
Gate Resistance
Rg
8.8
td(on)
14
25
14
25
42
70
30
50
30
60
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
IF = - 1.2 A, dI/dt = 100 A/µs
nC
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72245
S09-0870-Rev. D, 18-May-09
DT.
www.daysemi.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 10 V thru 6 V
5V
25
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
4V
10
20
15
10
TC = 125 °C
5
5
25 °C
3V
- 55 °C
0
0
0
1
2
3
4
0
5
1
4
5
Transfer Characteristics
Output Characteristics
1100
0.15
880
C - Capacitance (pF)
0.12
0.09
VGS = 4.5 V
0.06
VGS = 6 V
Ciss
660
440
Coss
220
0.03
VGS = 10 V
Crss
0
0.00
0
4
8
12
16
0
20
5
10
25
30
Capacitance
On-Resistance vs. Drain Current
1.6
10
VGS = 10 V
ID = 5.7 A
VDS = 15 V
ID = 3.5 A
1.4
R DS(on) - On-Resistance
(Normalized)
8
6
4
1.2
1.0
0.8
2
0
0.0
20
15
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
3
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
2
3.2
6.4
9.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72245
S09-0870-Rev. D, 18-May-09
12.8
16.0
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
50
1
0.0
TJ = 25 °C
TJ = 150 °C
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.16
ID = 5.7 A
0.12
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
8
10
On-Resistance vs. Gate-to-Source Voltage
0.6
150
0.4
120
ID = 250 µA
0.2
90
Power (W)
V GS(th) Variance (V)
6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.0
60
- 0.2
- 0.4
- 50
4
30
- 25
0
25
50
75
100
125
0
10- 3
150
10- 2
10-1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
1
0.1
10 ms
100 ms
1s
10 s
TC = 25 °C
Single Pulse
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Foot
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Document Number: 72245
S09-0870-Rev. D, 18-May-09
DT.
www.daysemi.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72245
S09-0870-Rev. D, 18-May-09
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Package Information
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Disclaimer
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 72610