SUM110N03-04P Datasheet

SUM110N03-04P
Vishay Siliconix
New Product
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
ID (A)
0.0042 @ VGS = 10 V
110
0.0065 @ VGS = 4.5 V
77
D
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
Optimized for Low-Side Synchronous Rectifier Operation
New Package with Low Thermal Resistance
100% Rg Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifier
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N03-04P
SUM110N03-04P-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC = 25_C
Continuous Drain Current (TJ = 175_C)
TC = 100_C
Pulsed Drain Current
Symbol
Limit
VDS
30
VGS
"20
ID
IDM
Avalanche Current
Repetitive Avalanche Energya
L = 0.1 mH
TC = 25_C
Maximum Power Dissipationa
TA = 25_Cc
Operating Junction and Storage Temperature Range
V
110
88
300
IAR
55
EAR
151
PD
Unit
120b
3.75
A
mJ
W
TJ, Tstg
−55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mountc
RthJA
40
RthJC
1.25
_C/W
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72366
S-32523—Rev. B, 08-Dec-03
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SUM110N03-04P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V, TJ = 125_C
50
VDS = 30 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
120
VGS = 10 V, ID = 20 A
Drain Source On-State
Drain-Source
On State Resistancea
rDS(on)
gfs
0.0033
nA
mA
m
0.0042
0.0063
VGS = 10 V, ID = 20 A, TJ = 175_C
0.0076
VDS = 15 V, ID = 20 A
V
A
VGS = 10 V, ID = 20 A, TJ = 125_C
0.0052
VGS = 4.5 V, ID = 20 A
Forward Transconductancea
3.0
W
0.0065
20
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate-Resistance
5100
860
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
430
Rg
0.5
1.0
1.7
60
Total Gate Chargeb
Qg
40
Gate-Source Chargeb
Qgs
18
Gate-Drain Chargeb
Qgd
16
Turn-On Delay Timeb
td(on)
12
20
12
20
40
60
10
15
Rise
Timeb
Turn-Off Delay Timeb
Fall Timeb
tr
td(off)
VDS = 15 V,, VGS = 4.5 V,, ID = 50 A
VDD = 15 V, RL = 0.3 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
tf
W
nC
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current
IS
100
Pulsed Current
ISM
300
Forward Voltagea
VSD
Reverse Recovery Time
trr
A
IF = 30 A, VGS = 0 V
1.2
1.5
V
IF = 50 A, di/dt = 100 A/ms
40
80
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
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Document Number: 72366
S-32523—Rev. B, 08-Dec-03
SUM110N03-04P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
120
250
VGS = 10 thru 5 V
100
I D − Drain Current (A)
I D − Drain Current (A)
200
150
4V
100
50
80
60
40
TC = 125_C
20
0
0
2
4
25_C
3V
2V
6
8
0
0.0
10
VDS − Drain-to-Source Voltage (V)
0.5
1.0
1.5
2.0
−55_C
2.5
3.0
3.5
4.0
4.5
VGS − Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
180
0.010
TC = −55_C
r DS(on) − On-Resistance ( W )
150
g fs − Transconductance (S)
25_C
120
125_C
90
60
30
0
0.008
0.006
VGS = 4.5 V
VGS = 10 V
0.004
0.002
0.000
0
20
40
60
80
100
0
20
40
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
Ciss
5000
4000
3000
2000
Coss
1000
Crss
0
0
100
80
100
Gate Charge
10
7000
6000
80
ID − Drain Current (A)
Capacitance
8000
60
VDS = 15 V
ID = 50 A
8
6
4
2
0
6
12
18
24
VDS − Drain-to-Source Voltage (V)
Document Number: 72366
S-32523—Rev. B, 08-Dec-03
30
0
20
40
60
Qg − Total Gate Charge (nC)
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SUM110N03-04P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r DS(on) − On-Resistance (W)
(Normalized)
1.6
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 30 A
I S − Source Current (A)
1.8
1.4
1.2
1.0
TJ = 150_C
TJ = 25_C
10
0.8
0.6
−50
−25
0
25
50
75
100
125
150
1
175
0
0.3
TJ − Junction Temperature (_C)
40
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
Drain-Source Voltage Breakdown
vs. Junction Temperature
ID = 1.0 mA
V (BR)DSS (V)
38
36
34
32
30
−50
−25
0
25
50
75
100
125
150
175
TJ − Junction Temperature (_C)
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Document Number: 72366
S-32523—Rev. B, 08-Dec-03
SUM110N03-04P
Vishay Siliconix
New Product
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
1000
120
Safe Operating Area, Junction-to-Case
Limited by rDS(on)
10 ms
100
100 ms
I D − Drain Current (A)
I D − Drain Current (A)
100
80
60
40
10 ms
dc, 100 ms
1
20
0
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
1
VDS − Drain-to-Source Voltage (V)
TC − Case Temperature (_C)
Normalized Effective Transient
Thermal Impedance
1 ms
10
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72366
S-32523—Rev. B, 08-Dec-03
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Document Number: 91000
Revision: 18-Jul-08
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