SUM40N02-12P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40a 0.026 @ VGS = 4.5 V 40a V(BR)DSS (V) 20 Qg (Typ) 75 7.5 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for High-Side Synchronous Rectifier 100% Rg Tested APPLICATIONS D Desktop or Server CPU Core D Game Station D TO-263 DRAIN connected to TAB G G D S Top View S N-Channel MOSFET Ordering Information: SUM40N02-12P SUM40N02-12P—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 100_C Pulsed Drain Current ID IDM TC = 25_C Maximum Power Dissipationb TA = 25_C d Operating Junction and Storage Temperature Range PD Unit V 40a 40a A 90 83c 3.75 W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mounted)d Junction-to-Case RthJA 40 RthJC 1.8 _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72111 S-42351—Rev. D, 20-Dec-04 www.vishay.com 1 SUM40N02-12P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.85 2 3 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 20 V, VGS = 0 V, TJ = 125_C 50 VDS = 20 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 90 VGS = 10 V, ID = 20 A Drain Source On-State Drain-Source On State Resistancea rDS(on) Forward Transconductancea gfs 0.0095 mA m 0.012 0.0175 VGS = 10 V, ID = 20 A, TJ = 175_C 0.022 VDS = 15 V, ID = 20 A nA A VGS = 10 V, ID = 20 A, TJ = 125_C 0.021 VGS = 4.5 V, ID = 15 A V W 0.026 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 180 Total Gate Chargeb Qg 7.5 Gate-Source Chargeb Qgs 3.5 Gate-Drain Chargeb Qgd Gate Resistance Rg Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb 1000 VDS = 10 V,, VGS = 4.5 V,, ID = 40 A tr pF 12 nC 2.6 1.5 td(on) td(off) 370 VGS = 0 V, VDS = 10 V, f = 1 MHz VDD = 10 V, RL = 0.25 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W tf 3.0 5.1 11 20 10 15 24 35 9 15 W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 40 Pulsed Current ISM 90 Forward Voltagea VSD Reverse Recovery Time IF = 40 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 40 A, di/dt = 100 A/ms m A 1.1 1.5 V 20 40 ns 0.7 1.1 A 0.007 0.022 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72111 S-42351—Rev. D, 20-Dec-04 SUM40N02-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 90 90 6V 75 60 I D − Drain Current (A) 75 I D − Drain Current (A) TC = −55_C VGS = 10 thru 7 V 5V 45 4V 30 15 25_C 60 45 125_C 30 15 3V 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 50 0.040 0.035 g fs − Transconductance (S) r DS(on) − On-Resistance ( W ) TC = −55_C 40 25_C 30 125_C 20 10 0.030 VGS = 4.5 V 0.025 0.020 0.015 VGS = 10 V 0.010 0.005 0 0.000 0 10 20 30 40 0 50 15 30 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 75 90 Gate Charge 10 1200 Ciss 900 600 Coss Crss 300 60 ID − Drain Current (A) Capacitance 1500 45 0 VDS = 10 V ID = 40 A 8 6 4 2 0 0 4 8 12 16 VDS − Drain-to-Source Voltage (V) Document Number: 72111 S-42351—Rev. D, 20-Dec-04 20 0 2 4 6 8 10 12 14 16 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM40N02-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.6 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 20 A I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 1.8 1.4 1.2 1.0 0.8 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 10 TJ = 25_C 1 0 175 0.3 TJ − Junction Temperature (_C) 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 30 V(BR)DSS (V) 28 ID = 250 mA 26 24 22 20 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) www.vishay.com 4 Document Number: 72111 S-42351—Rev. D, 20-Dec-04 SUM40N02-12P Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 0 10, 100 ms 1 ms 10 10 ms dc, 100 ms 1 25 50 75 100 125 150 175 0.1 TC − Ambient Temperature (_C) TC = 25_C Single Pulse 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance *Limited by rDS(on) 0.1 0 1 Safe Operating Area 1000 50 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72111. Document Number: 72111 S-42351—Rev. D, 20-Dec-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1