SUM40N02-12P Datasheet

SUM40N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.012 @ VGS = 10 V
40a
0.026 @ VGS = 4.5 V
40a
V(BR)DSS (V)
20
Qg (Typ)
75
7.5
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
Optimized for High-Side Synchronous Rectifier
100% Rg Tested
APPLICATIONS
D Desktop or Server CPU Core
D Game Station
D
TO-263
DRAIN connected to TAB
G
G
D S
Top View
S
N-Channel MOSFET
Ordering Information: SUM40N02-12P
SUM40N02-12P—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)
TC = 25_C
TC = 100_C
Pulsed Drain Current
ID
IDM
TC = 25_C
Maximum Power Dissipationb
TA = 25_C d
Operating Junction and Storage Temperature Range
PD
Unit
V
40a
40a
A
90
83c
3.75
W
TJ, Tstg
−55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB
Mounted)d
Junction-to-Case
RthJA
40
RthJC
1.8
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
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SUM40N02-12P
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
20
VGS(th)
VDS = VGS, ID = 250 mA
0.85
2
3
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 20 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 20 V, VGS = 0 V, TJ = 125_C
50
VDS = 20 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
90
VGS = 10 V, ID = 20 A
Drain Source On-State
Drain-Source
On State Resistancea
rDS(on)
Forward Transconductancea
gfs
0.0095
mA
m
0.012
0.0175
VGS = 10 V, ID = 20 A, TJ = 175_C
0.022
VDS = 15 V, ID = 20 A
nA
A
VGS = 10 V, ID = 20 A, TJ = 125_C
0.021
VGS = 4.5 V, ID = 15 A
V
W
0.026
10
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
180
Total Gate Chargeb
Qg
7.5
Gate-Source Chargeb
Qgs
3.5
Gate-Drain Chargeb
Qgd
Gate Resistance
Rg
Turn-On Delay Timeb
Rise
Timeb
Turn-Off Delay Timeb
Fall Timeb
1000
VDS = 10 V,, VGS = 4.5 V,, ID = 40 A
tr
pF
12
nC
2.6
1.5
td(on)
td(off)
370
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDD = 10 V, RL = 0.25 W
ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W
tf
3.0
5.1
11
20
10
15
24
35
9
15
W
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current
IS
40
Pulsed Current
ISM
90
Forward Voltagea
VSD
Reverse Recovery Time
IF = 40 A, VGS = 0 V
trr
Peak Reverse Recovery Current
IRM
Reverse Recovery Charge
Qrr
IF = 40 A, di/dt = 100 A/ms
m
A
1.1
1.5
V
20
40
ns
0.7
1.1
A
0.007
0.022
mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 72111
S-42351—Rev. D, 20-Dec-04
SUM40N02-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
90
90
6V
75
60
I D − Drain Current (A)
75
I D − Drain Current (A)
TC = −55_C
VGS = 10 thru 7 V
5V
45
4V
30
15
25_C
60
45
125_C
30
15
3V
0
0
0
2
4
6
8
10
0
1
VDS − Drain-to-Source Voltage (V)
2
3
4
5
6
7
VGS − Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
50
0.040
0.035
g fs − Transconductance (S)
r DS(on) − On-Resistance ( W )
TC = −55_C
40
25_C
30
125_C
20
10
0.030
VGS = 4.5 V
0.025
0.020
0.015
VGS = 10 V
0.010
0.005
0
0.000
0
10
20
30
40
0
50
15
30
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
75
90
Gate Charge
10
1200
Ciss
900
600
Coss
Crss
300
60
ID − Drain Current (A)
Capacitance
1500
45
0
VDS = 10 V
ID = 40 A
8
6
4
2
0
0
4
8
12
16
VDS − Drain-to-Source Voltage (V)
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
20
0
2
4
6
8
10
12
14
16
Qg − Total Gate Charge (nC)
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SUM40N02-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.6
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 20 A
I S − Source Current (A)
rDS(on) − On-Resiistance
(Normalized)
1.8
1.4
1.2
1.0
0.8
−50
−25
0
25
50
75
100
125
150
TJ = 150_C
10
TJ = 25_C
1
0
175
0.3
TJ − Junction Temperature (_C)
0.6
0.9
1.2
VSD − Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
30
V(BR)DSS (V)
28
ID = 250 mA
26
24
22
20
−50
−25
0
25
50
75
100
125
150
175
TJ − Junction Temperature (_C)
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Document Number: 72111
S-42351—Rev. D, 20-Dec-04
SUM40N02-12P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
I D − Drain Current (A)
I D − Drain Current (A)
40
30
20
10
0
10, 100 ms
1 ms
10
10 ms
dc, 100 ms
1
25
50
75
100
125
150
175
0.1
TC − Ambient Temperature (_C)
TC = 25_C
Single Pulse
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
*Limited
by rDS(on)
0.1
0
1
Safe Operating Area
1000
50
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72111.
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
www.vishay.com
5
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Disclaimer
All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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