SUM110N03-03 New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 30 0.0025 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage APPLICATIONS D D Automotive 12-V Boardnet TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information: SUM110N03-03 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 100_C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_C d Operating Junction and Storage Temperature Range Unit V 110a 110a A 350 IAR 70 EAR 245 mJ 242c PD 3.75 W TJ, Tstg - 55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case RthJA 40 RthJC 0.62 _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72260 S-31257—Rev. A, 16-Jun-03 www.vishay.com 1 SUM110N03-03 New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 2.5 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS V VDS = 24 V, VGS = 0 V, TJ = 125_C 50 VDS = 24 V, VGS = 0 V, TJ = 175_C 250 ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4.5 gfs VDS = 15 V, ID = 30 A mA m A 0.002 0.0025 0.0037 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea nA W 0.0044 15 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargeb Qg Gate-Source Chargeb Qgs Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb 12500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1650 pF 970 170 VDS = 15 V,, VGS = 10 V,, ID = 110 A Qgd 250 57 nC 30 td(on) 20 35 tr 125 190 70 105 25 40 td(off) VDD = 15 V, RL = 0.18 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 110 Pulsed Current ISM 350 Forward Voltagea VSD Reverse Recovery Time IF = 50 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 50 A, di/dt = 100 A/ms m A 0.9 1.5 V 70 140 ns 3 4.5 A 0.1 0.31 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72260 S-31257—Rev. A, 16-Jun-03 SUM110N03-03 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 5V 100 50 150 100 TC = 125_C 50 25_C 3V 4V - 55_C 0 0 0 1 2 3 4 5 0 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 280 0.004 240 r DS(on) - On-Resistance ( W ) 25_C TC = - 55_C g fs - Transconductance (S) 1 200 125_C 160 120 80 0.003 0.002 VGS = 10 V 0.001 40 0 0.000 0 20 40 60 80 100 0 120 20 40 ID - Drain Current (A) 80 100 280 350 ID - Drain Current (A) Capacitance Gate Charge 20 16000 V GS - Gate-to-Source Voltage (V) Ciss C - Capacitance (pF) 60 12000 8000 4000 Coss VDS = 15 V ID = 110 A 16 12 8 4 Crss 0 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Document Number: 72260 S-31257—Rev. A, 16-Jun-03 30 0 70 140 210 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N03-03 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.8 100 1.5 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.2 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ = 150_C 10 TJ = 25_C 1 0 175 0.3 TJ - Junction Temperature (_C) 1000 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 40 38 V(BR)DSS (V) 100 I Dav (a) 0.6 IAV (A) @ TA = 25_C 10 ID = 1 mA 36 34 1 32 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 72260 S-31257—Rev. A, 16-Jun-03 SUM110N03-03 New Product Vishay Siliconix THERMAL RATINGS Safe Operating Area 120 1000 100 Limited by rDS(on) 100 I D - Drain Current (A) I D - Drain Current (A) Maximum Avalanche and Drain Current vs. Case Temperature 80 60 40 1 ms 10 1 20 0 10 ms 100 ms 10 ms 100 ms, dc TA = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Document Number: 72260 S-31257—Rev. A, 16-Jun-03 www.vishay.com 5