SUV85N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0043 @ VGS = 10 V 85a APPLICATIONS 0.007 @ VGS = 4.5 V 85a D Secondary Side DC/DC rDS(on) (W) ID D TO-262 1 2 3 G G D S S Top View N-Channel MOSFET SUV85N03-04P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 100_C Pulsed Drain Current Symbol Limit VDS 30 VGS "20 ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_Cd Operating Junction and Storage Temperature Range Unit V 85a 85a A 240 IAR 75 EAR 280 mJ 166c PD 3.75 W TJ, Tstg -55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mountd Junction-to-Ambient Junction-to-Case Free Air 40 RthJA RthJC 62.5 _C/W C/W 0.9 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72088 S-22245—Rev. A, 25-Nov-02 www.vishay.com 1 SUV85N03-04P New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) V VDS = 24 V, VGS = 0 V, TJ = 125_C 50 VDS = 24 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) gfs 0.0035 mA m 0.0043 0.0065 VGS = 10 V, ID = 30 A, TJ = 175_C 0.008 VDS = 15 V, ID = 30 A nA A VGS = 10 V, ID = 30 A, TJ = 125_C 0.0055 VGS = 4.5 V, ID = 20 A Forward Transconductancea 2 W 0.007 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 615 Total Gate Chargeb Qg 71 Gate-Source Chargeb Qgs 15 Gate-Drain Chargeb Qgd 16 Gate Resistance RG 2.2 td(on) 15 23 12 18 50 75 22 35 Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb tr td(off) 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 85 A VDD = 15 V, RL = 0.18 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W tf 1380 pF 90 nC W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time IF = 85 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 85 A, di/dt = 100 A/ms m A 1.1 1.5 V 42 70 ns 1.4 2.1 A 0.03 0.06 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72088 S-22245—Rev. A, 25-Nov-02 SUV85N03-04P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 100 4V 50 150 100 TC = 125_C 50 25_C -55 _C 2, 3 V 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 180 0.008 TC = -55_C r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) 150 25_C 120 125_C 90 60 30 0 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0.000 0 20 40 60 80 0 100 20 40 ID - Drain Current (A) 80 100 120 ID - Drain Current (A) Capacitance Gate Charge 20 7000 V GS - Gate-to-Source Voltage (V) 6000 C - Capacitance (pF) 60 Ciss 5000 4000 3000 Coss 2000 1000 VDS = 15 V ID = 85 A 16 12 8 4 Crss 0 0 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Document Number: 72088 S-22245—Rev. A, 25-Nov-02 30 0 20 40 60 80 100 120 140 Qg - Total Gate Charge (nC) www.vishay.com 3 SUV85N03-04P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 TJ = 150_C 10 TJ = 25_C 0.4 0.0 -50 -25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 45 40 IAV (A) @ TA = 25_C V(BR)DSS (V) I Dav (a) 100 IAV (A) @ TA = 150_C 0.1 0.0001 0.001 0.01 tin (Sec) 4 ID = 250 mA 35 30 1 www.vishay.com 1.2 Drain Source Breakdown vs. Junction Temperature 1000 0.00001 0.9 VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 10 0.6 0.1 1 25 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 72088 S-22245—Rev. A, 25-Nov-02 SUV85N03-04P New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 100 10 ms 80 I D - Drain Current (A) I D - Drain Current (A) 100 60 40 10 100 ms 1 20 0 1 ms Limited by rDS(on) 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 100 Square Wave Pulse Duration (sec) Document Number: 72088 S-22245—Rev. A, 25-Nov-02 www.vishay.com 5