Si3442BDV-RC

Si3442BDV_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RT1
14.2039
N/A
N/A
RT2
41.7977
N/A
N/A
RT3
31.2015
N/A
N/A
RT4
57.7969
N/A
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CT1
122.2679 u
N/A
N/A
CT2
20.4674 m
N/A
N/A
CT3
2.4896 m
N/A
N/A
CT4
1.7993
N/A
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74658
Revision: 04-May-07
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Si3442BDV_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RF1
16.3401
N/A
N/A
RF2
39.4348
N/A
N/A
RF3
32.8835
N/A
N/A
RF4
56.3416
N/A
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CF1
119.9532 u
N/A
N/A
CF2
2.3373 m
N/A
N/A
CF3
25.1100 m
N/A
N/A
CF4
1.8335
N/A
N/A
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 74658
Revision: 04-May-07
Si3442BDV_RC
Vishay Siliconix
Document Number: 74658
Revision: 04-May-07
www.vishay.com
3