Si3442BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 14.2039 N/A N/A RT2 41.7977 N/A N/A RT3 31.2015 N/A N/A RT4 57.7969 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 122.2679 u N/A N/A CT2 20.4674 m N/A N/A CT3 2.4896 m N/A N/A CT4 1.7993 N/A N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74658 Revision: 04-May-07 www.vishay.com 1 Si3442BDV_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 16.3401 N/A N/A RF2 39.4348 N/A N/A RF3 32.8835 N/A N/A RF4 56.3416 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 119.9532 u N/A N/A CF2 2.3373 m N/A N/A CF3 25.1100 m N/A N/A CF4 1.8335 N/A N/A Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74658 Revision: 04-May-07 Si3442BDV_RC Vishay Siliconix Document Number: 74658 Revision: 04-May-07 www.vishay.com 3