Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 4.2 3.0 3.4 IDM 2.4 20 1.4 0.72 1.67 0.86 1.07 0.55 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 145 70 85 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72504 S-40424—Rev. C, 15-Mar-04 www.vishay.com 1 Si3442BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 Typ Max Unit 1.8 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta VDS = 0 V, VGS = "12 V ID(on) D( ) On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Diode Forward Voltagea 1 5 VDS = 5 V, VGS = 4.5 V 10 VDS = 5 V, VGS = 2.5 V 4 mA A VGS = 4.5 V, ID = 4 A 0.045 0.057 VGS = 2.5 V, ID = 3.4 A 0.070 0.090 gfs VDS = 10 V, ID = 4.0 A 11.3 VSD IS = 1.6 A, VGS = 0 V 0.75 1.2 3 5 VDS = 10 V, VGS = 4.5 V, ID = 4.0 A 0.65 rDS(on) Forward Transconductancea VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time f = 1 MHz 2.7 td(on) Rise Time tr Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 0.95 IF = 1.6 A, di/dt = 100 A/ms W 35 55 50 75 20 30 15 25 30 60 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 3.5 V TC = −55_C 16 3V 12 2.5 V 8 4 2V 1.5 V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 I D − Drain Current (A) I D − Drain Current (A) 16 5 25_C 12 125_C 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72504 S-40424—Rev. C, 15-Mar-04 Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 480 0.12 400 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.14 VGS = 2.5 V 0.10 0.08 0.06 VGS = 4.5 V 0.04 Ciss 320 240 160 Coss 80 0.02 Crss 0.00 0 0 4 8 12 16 0 20 4 ID − Drain Current (A) Gate Charge VGS = 4.5 V ID = 4 A 4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 20 On-Resistance vs. Junction Temperature 3 2 1 0.5 1.0 1.5 2.0 2.5 3.0 1.2 1.0 0.8 0.6 −50 3.5 −25 Qg − Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 10 r DS(on) − On-Resistance ( W ) TJ = 150_C I S − Source Current (A) 16 1.4 VDS = 10 V ID = 4 A 1 TJ = 25_C 0.1 0.01 0.001 1 0.0 12 VDS − Drain-to-Source Voltage (V) 5 0 0.0 8 0.16 ID = 4 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72504 S-40424—Rev. C, 15-Mar-04 1.2 0 1 2 3 4 5 6 7 8 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.3 8 0.2 6 ID = 250 mA −0.0 TA = 25_C Single Pulse Power (W) V GS(th) Variance (V) 0.1 −0.1 −0.2 4 −0.3 2 −0.4 −0.5 −0.6 −50 −25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ − Temperature (_C) 100 100 600 Safe Operating Area rDS(on) Limited IDM Limited 10 ms 10 I D − Drain Current (A) 10 Time (sec) 100 ms 1 1 ms 10 ms 0.1 TA = 25_C Single Pulse 100 ms dc, 100 s, 10 s, 1 s BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72504 S-40424—Rev. C, 15-Mar-04