VISHAY SI3442BDV

Si3442BDV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
ID (A)
0.057 @ VGS = 4.5 V
4.2
0.090 @ VGS = 2.5 V
3.4
(1, 2, 5, 6) D
TSOP-6
Top View
3 mm
1
6
2
5
3
4
(3) G
2.85 mm
(4) S
N-Channel MOSFET
Ordering Information: Si3442BDV-T1—E3
Marking Code:
2Bxxx
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"12
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
4.2
3.0
3.4
IDM
2.4
20
1.4
0.72
1.67
0.86
1.07
0.55
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
145
70
85
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72504
S-40424—Rev. C, 15-Mar-04
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1
Si3442BDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
0.6
Typ
Max
Unit
1.8
V
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
VDS = 0 V, VGS = "12 V
ID(on)
D( )
On-State Drain Currenta
Drain Source On-State
Drain-Source
On State Resistancea
Diode Forward Voltagea
1
5
VDS = 5 V, VGS = 4.5 V
10
VDS = 5 V, VGS = 2.5 V
4
mA
A
VGS = 4.5 V, ID = 4 A
0.045
0.057
VGS = 2.5 V, ID = 3.4 A
0.070
0.090
gfs
VDS = 10 V, ID = 4.0 A
11.3
VSD
IS = 1.6 A, VGS = 0 V
0.75
1.2
3
5
VDS = 10 V, VGS = 4.5 V, ID = 4.0 A
0.65
rDS(on)
Forward Transconductancea
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
f = 1 MHz
2.7
td(on)
Rise Time
tr
Turn-Off Delay Time
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
0.95
IF = 1.6 A, di/dt = 100 A/ms
W
35
55
50
75
20
30
15
25
30
60
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
VGS = 5 thru 3.5 V
TC = −55_C
16
3V
12
2.5 V
8
4
2V
1.5 V
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
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I D − Drain Current (A)
I D − Drain Current (A)
16
5
25_C
12
125_C
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V)
Document Number: 72504
S-40424—Rev. C, 15-Mar-04
Si3442BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
480
0.12
400
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.14
VGS = 2.5 V
0.10
0.08
0.06
VGS = 4.5 V
0.04
Ciss
320
240
160
Coss
80
0.02
Crss
0.00
0
0
4
8
12
16
0
20
4
ID − Drain Current (A)
Gate Charge
VGS = 4.5 V
ID = 4 A
4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
3
2
1
0.5
1.0
1.5
2.0
2.5
3.0
1.2
1.0
0.8
0.6
−50
3.5
−25
Qg − Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
10
r DS(on) − On-Resistance ( W )
TJ = 150_C
I S − Source Current (A)
16
1.4
VDS = 10 V
ID = 4 A
1
TJ = 25_C
0.1
0.01
0.001
1
0.0
12
VDS − Drain-to-Source Voltage (V)
5
0
0.0
8
0.16
ID = 4 A
0.12
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 72504
S-40424—Rev. C, 15-Mar-04
1.2
0
1
2
3
4
5
6
7
8
VGS − Gate-to-Source Voltage (V)
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Si3442BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.3
8
0.2
6
ID = 250 mA
−0.0
TA = 25_C
Single Pulse
Power (W)
V GS(th) Variance (V)
0.1
−0.1
−0.2
4
−0.3
2
−0.4
−0.5
−0.6
−50
−25
0
25
50
75
100
125
0
0.01
150
0.1
1
TJ − Temperature (_C)
100
100
600
Safe Operating Area
rDS(on) Limited
IDM Limited
10 ms
10
I D − Drain Current (A)
10
Time (sec)
100 ms
1
1 ms
10 ms
0.1
TA = 25_C
Single Pulse
100 ms
dc, 100 s, 10 s, 1 s
BVDSS Limited
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72504
S-40424—Rev. C, 15-Mar-04