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AM40N04-30DE
Analog Power
N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
32 @ VGS = 10V
40
42 @ VGS = 4.5V
ID (A)
33
29
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Symbol
Limit
Units
Parameter
VDS
40
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
a
o
TC=25 C ID
Continuous Drain Current
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
a
40
IS
30
A
50.0
W
TC=25 C P D
TJ, Tstg -55 to 175
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Symbol
a
A
IDM
o
Power Dissipation
Maximum Junction-to-Ambient
Maximum Junction-to-Case
33
RθJA
RθJC
Maximum
o
C
Units
50
o
3.0
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM40N04-30DE_A
AM40N04-30DE
Analog Power
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
A
r DS(on)
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
gfs
VSD
A
Pulsed Source Current (Body Diode)
1
VDS = 0 V, VGS = 20 V
±100
VDS = 24 V, VGS = 0 V
1
25
o
VDS = 24 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 33 A
VGS = 4.5 V, ID = 29 A
34
ISM
uA
A
32
42
VDS = 15 V, ID = 33 A
IS = 34 A, VGS = 0 V
V
nA
mΩ
22
1.1
S
V
5
A
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 33 A
VDS = 15 V, VGS = 0 V,
f = 1MHz
VDD = 25 V, RL = 25 Ω , ID = 34 A,
VGEN = 10 V
5
1.1
1.4
489
94
16
5
23
3
nC
pF
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM40N04-30DE_A
AM40N04-30DE
Analog Power
Typical Electrical Characteristics
50
60
ID - Drain Current (A)
ID - Drain Current (A)
T A = -55oC
40
50
4V
40
25oC
45
6V
10V
30
20
3V
125oC
35
30
25
20
15
10
10
5
0
0
0.5
1
1.5
2
2.5
0
3
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
8
9
Ciss, Coss and Crss measurement of AM4541C Die1
NMOS
0.18
0.16
900
800
0.14
0.12
Capacitance (nC)
rDS(ON) - On-resistance(ohm)
5
6
7
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.5V
0.1
0.08
0.06
0.04
10V
0.02
700
600
500
400
Ciss
Coss
300
200
Crss
100
0
0
0
5
10
15
20
25
30
35
0
40
5
10
ID - Drain Current (A)
On Resistance vs. Drain Current
10
15
20
Vds(V)
Capacitance
1.8
VD= 15V
I D= 6.5A
VGS = 10V
r DS(ON) - On-Resistance (Ohm)
(Normalized)
8
VGS(V)
6
4
2
0
1.6
1.4
1.2
1
0.8
0.6
0
2
4
6
8
10
Q G, Total Gate Charge (nC)
-50
12
Gate Charge
0
25
50
75
100
o
T J - Junction Temperature ( C)
On-Resistance vs. Junction Temperature
3
PRELIMINARY
-25
Publication Order Number:
DS-AM40N04-30DE_A
125
150
AM40N04-30DE
Analog Power
Typical Electrical Characteristics
0.05
0.045
rDS(on) - On-Resistance (Ohm)
IS - Source CURRENT (A)
100
10
1
T A = 125oC
0.1
25oC
0.01
0.001
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.0001
0
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
1
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
P(pk), PEAK TRANSIENT POWER (W)
4.7
ID = 250µA
4.5
V GS(th) Variance (V)
4.3
4.1
3.9
3.7
3.5
3.3
3.1
2.9
2.7
-50
-25
0
25
50
75
100
125
150
40
30
20
10
0
0.001
o
TJ - Temperature ( C)
Threshold Voltage
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.01
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
Rq J A (t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.0
P(p k)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t )
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
t1, TIM E (s e c )
1
10
100
1000
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM40N04-30DE_A
AM40N04-30DE
Analog Power
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM40N04-30DE_A