ANALOGPOWER AM20P04-60D

AM20P04-60D
Analog Power
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
69 @ VGS = -10V
-40
106 @ VGS = -4.5V
ID (A)
22
18
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
Drain-Source Voltage
-40
VDS
V
±20
Gate-Source Voltage
VGS
a
o
TA=25 C ID
Continuous Drain Current
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
a
IDM
±72
IS
-30
o
TA=25 C PD
Power Dissipation
THERMAL RESISTANCE RATINGS
Parameter
Symbol
a
A
A
W
50
o
C
TJ, Tstg -55 to 175
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case
22
RθJA
RθJC
Maximum
Units
50
o
3.0
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM20P04-60_E
AM20P04-60D
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
IDSS
A
A
rDS(on)
g fs
VSD
-1
VDS = 0 V, VGS = ±25 V
±100
nA
VDS = -24 V, VGS = 0 V
-1
-5
uA
VDS = -24 V, VGS = 0 V, T J = 55oC
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -22 A
VGS = -4.5 V, ID = -18 A
-41
A
69
106
VDS = -15 V, ID = -22 A
IS = -41 A, VGS = 0 V
31
-0.7
mΩ
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
10
VDS = -15 V, VGS = -4.5 V,
ID = -22 A
2.2
2.5
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDD = -15 V, RL = 15 Ω , ID = -24 A,
VGEN = -10 V, RG = 6Ω
10
2.8
53.6
46
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM20P04-60_E
AM20P04-60D
Analog Power
Typical Electrical Characteristics
25
30
10V
6V
20
4V
15
10
125oC
15
10
5
5
3V
0
0
0
1
2
3
4
1
5
1.5
2
2.5
3
3.5
4
V GS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage(V)
Output Characteristics
Transfer Characteristics
0.4
Ciss, Coss and Crss measurement of AM4541C Die2
PMOS
0.35
900
4.5V
0.3
0.25
Capacitance (nC)
rDS(ON) - On-Resistance (ohm)
25oC
T A = -55oC
20
ID - Drain Current (A)
ID - Drain Current (A)
25
0.2
0.15
0.1
10V
0.05
800
700
600
Ciss
Coss
Crss
500
400
300
200
100
0
0
0
5
10
15
20
25
30
35
0
40
5
10
ID - Drain Current (A)
Figure 3. On Resistance Vs Vgs Voltage
20
Capacitance
1.6
VD= 10V
ID= 4.6A
VGS = - 10V
1.5
rDS(ON) - On-Resistance (Ohm)
(Normalized)
10
15
Vds(V)
1.4
8
VGS(V)
1.3
1.2
6
1.1
4
1
0.9
2
0.8
0.7
0
0.6
0
2
4
6
8
10
-50
QG, Total Gate Charge (nC)
0
25
50
75
100
125
o
TJ - Junction Temperature ( C)
Gate Charge
On-Resistance vs. Junction Temperature
3
PRELIMINARY
-25
Publication Order Number:
DS-AM20P04-60_E
150
AM20P04-60D
Analog Power
Typical Electrical Characteristics
0.25
ID = -5.7A
RDS(ON), ON-RESISTANCE (OHM)
100
IS - Source Current (A)
10
T A = 125oC
1
o
25 C
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
0.2
0.15
0.1
0.05
TA = 25oC
0
1.2
2
V SD - Source-to-Drain Voltage (V)
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Source-Drain Diode Forward Voltage
Figure 8. On-Resistance with Gate to Source Voltage
2
P(pk), PEAK TRANSIENT POWER (W)
50
ID = -250µA
1.9
V GS(th) Variance (V)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
-50
-25
0
25
50
75
100
125
150
o
SINGLE PULSE
RqJA = 125C/W
TA = 25C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature ( C)
t1, TIME (sec)
Threshold Voltage
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D =0.5
0.2
Rq J A(t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.1
0.05
P (pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t)
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIM E (s ec)
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM20P04-60_E
AM20P04-60D
Analog Power
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM20P04-60_E