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AMD540CE
Analog Power
P & N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
40
-40
ID (A)
46 @ VGS = 4.5V
36 @ VGS = 10V
48 @ VGS = -4.5V
38 @ VGS = -10V
28
33
-28
-33
D1
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
G
G
1
S
S1 G1 D S2 G2
S
2
2
D2
1
N-Channel MOSFET
P-Channel MOSFET
ESD Protected
2000V
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol N-Channel P-Channel Units
Parameter
Drain-Source Voltage
40
-40
VDS
V
Gate-Source Voltage
20
-20
VGS
a
o
TA=25 C ID
Continuous Drain Current
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
a
33
-33
IDM
±40
±40
IS
30
-30
50
50
o
TA=25 C PD
Power Dissipation
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum Junction-to-Case
a
RθJA
RθJC
-55 to 175
A
A
W
-55 to 175
Maximum
o
C
Units
50
o
3.0
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AMD540CE_F
AMD540CE
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Limits
Ch Min Typ Max Unit
Static
Gate-Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain CurrentA
ID(on)
Drain-Source On-ResistanceA
Forward TranconductanceA
rDS(on)
gfs
VGS = VDS, ID = 250 uA
N
1
VGS = VDS, ID = -250 uA
VGS = -20 V, VDS = 0 V
VGS = 20 V, VDS = 0 V
VDS = -24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
VDS = 5 V, VGS = 10 V
VDS = -5 V, VGS = -10 V
VGS = 10 V, ID = 33 A
VGS = 4.5 V, ID = 28 A
VGS = -10 V, ID = -33 A
VGS = -4.5 V, ID = -28 A
VDS = 15 V, ID = 33 A
VDS = -15 V, ID = -33 A
P
P
N
P
N
N
P
-1
V
±100
±100
-1
1
20
-50
nA
uA
A
36
46
38
48
N
P
N
P
40
31
N
P
N
P
N
12
13
3.3
5.8
4.5
P
12
N
P
N
P
20
15
9
16
70
62
20
46
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
N-Channel VDS=15V, VGS=4.5V,
P-Channel
ID=33A
VDS=-15V, VGS=-4.5V, ID=-33A
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
N-Chaneel
VDD=15V, VGS=10V, ID=1A ,
RGEN=25Ω,
P-Channel
VDD=-15V, VGS=-10V, ID=-1A
RGEN=15Ω
N
P
N
P
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AMD540CE_F
AMD540CE
Analog Power
Typical Electrical Characteristics (N-Channel)
50
60
ID - Drain Current (A)
ID - Drain Current (A)
T A = -55oC
40
50
4V
40
25oC
45
6V
10V
30
20
3V
125oC
35
30
25
20
15
10
10
5
0
0
0.5
1
1.5
2
2.5
0
3
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
8
9
Ciss, Coss and Crss measurement of AM4541C Die1
NMOS
0.18
0.16
900
800
0.14
0.12
Capacitance (nC)
rDS(ON) - On-resistance(ohm)
5
6
7
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.5V
0.1
0.08
0.06
0.04
10V
0.02
700
600
500
400
Ciss
Coss
300
200
Crss
100
0
0
0
5
10
15
20
25
30
35
0
40
5
10
ID - Drain Current (A)
On Resistance vs. Drain Current
10
20
Capacitance
1.8
VD= 15V
ID= 6.5A
VGS = 10V
r DS(ON) - On-Resistance (Ohm)
(Normalized)
8
VGS(V)
15
Vds(V)
6
4
2
0
1.6
1.4
1.2
1
0.8
0.6
0
2
4
6
8
10
QG, Total Gate Charge (nC)
12
-50
Gate Charge
0
25
50
75
100
o
T J - Junction Temperature ( C)
On-Resistance vs. Junction Temperature
3
PRELIMINARY
-25
Publication Order Number:
DS-AMD540CE_F
125
150
AMD540CE
Analog Power
Typical Electrical Characteristics (N-Channel)
0.05
0.045
rDS(on) - On-Resistance (Ohm)
IS - Source CURRENT (A)
100
10
1
T A = 125oC
0.1
25oC
0.01
0.001
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.0001
0
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
1
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
P(pk), PEAK TRANSIENT POWER (W)
4.7
ID = 250µA
4.5
V GS(th) Variance (V)
4.3
4.1
3.9
3.7
3.5
3.3
3.1
2.9
2.7
-50
-25
0
25
50
75
100
125
150
40
30
20
10
0
0.001
o
TJ - Temperature ( C)
Threshold Voltage
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.01
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
Rq J A (t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.0
P(p k)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t )
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
t1, TIM E (s e c )
1
10
100
1000
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AMD540CE_F
AMD540CE
Analog Power
Typical Electrical Characteristics (P-Channel)
60
60
4.5V
6V through 10V
50
4V
ID Drain Current (A)
IDS Drain Current (A)
50
40
40
20
25C
30
3.5V
30
20
3V
10
10
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
1
2
3
4
5
6
VGS Gate to Source Voltage (V)
VDS(V)
Output Characteristics
Transfer Characteristics
2400
0.1
Ciss
2000
0.08
0.07
Capacitance (pF)
RDS(ON) resistance ( Ω)
2200
4.5V
0.09
6V
0.06
0.05
10V
0.04
0.03
1800
1600
1400
1200
1000
Coss
800
600
400
0.02
Crs
200
0.01
0
0
0
0
10
20
30
40
50
5
60
10
15
20
VDS (V)
ID Drain Current (A)
On Resistance Vs Vgs Voltage
Capacitance
1.6
10
VD= 10V
ID= 10A
VGS = - 10V
rDS(ON) - On-Resistance (Ohm)
(Normalized)
1.5
1.4
8
VGS (V)
1.3
1.2
6
1.1
4
1
0.9
2
0.8
0.7
0
0.6
0
5
10
15
20
25
30
-50
QG, Total Gate Charge (nC)
0
25
50
75
100
125
o
TJ - Junction Temperature ( C)
Gate Charge
On-Resistance vs. Junction Temperature
5
PRELIMINARY
-25
Publication Order Number:
DS-AMD540CE_F
150
AMD540CE
Analog Power
Typical Electrical Characteristics (P-Channel)
0.1
0.09
RDS(ON) Resistance (Ω)
100
IS - Source Current (A)
10
T A = 125oC
1
25oC
0.1
0.01
0.001
Id=10A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0
V SD - Source-to-Drain Voltage (V)
2
4
6
8
10
VGS Gate to Source Voltage(V)
Source-Drain Diode Forward Voltage
On-Resistance with Gate to Source Voltage
2
P(pk), PEAK TRANSIENT POWER (W)
50
ID = -250µA
1.9
V GS(th) Variance (V)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
-50
-25
0
25
50
75
100
125
150
o
SINGLE PULSE
RqJA = 125C/W
TA = 25C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature ( C)
t1, TIME (sec)
Threshold Voltage
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D =0.5
0.2
Rq J A(t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.1
0.05
P (pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t)
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIM E (s ec)
Figure 11. Transient Thermal Response Curve
6
PRELIMINARY
Publication Order Number:
DS-AMD540CE_F
AMD540CE
Analog Power
7
PRELIMINARY
Publication Order Number:
DS-AMD540CE_F