UNISONIC TECHNOLOGIES CO., LTD UF730K-MT Preliminary Power MOSFET 5.5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON) < 0.95Ω @ VGS=10V, ID=3.0A * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF730KL-TF1-T UF730KG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd. 1 of 6 QW-R205-116 .a UF730K-MT Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C) RATINGS UNIT 400 V 400 V Gate-Source Voltage ±20 V Continuous Drain Current 5.5 A Pulsed Drain Current (Note 2) 22 A Single Pulse Avalanche Energy (Note 3) 300 mJ TC = 25°C 35 W Power Dissipation PD Derate above 25°C 0.28 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤5.5A, di/dt≤100A/µs, VDD≤BVDSS, TJ≤TJMAX SYMBOL VDSS VDGR VGSS ID IDM EAS THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 3.6 UNIT °C/W °C/W 2 of 6 QW-R205-116 .a UF730K-MT Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage On-State Drain Current (Note 1) SYMBOL BVDSS ID(ON) TEST CONDITIONS VGS=0V, ID=250μA VDS>ID(ON)×RDS(ON)MAX, VGS=10V VDS=Rated BVDSS, VGS=0V VGS=±20V Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VGS=50V, ID=1.3A, Gate-Source Charge QGS VDS=10V, IG=100μA Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD=30V, ID≈0.5A, Turn-On Rise Time tR VGS=0~10V, RG=25Ω Turn-Off Delay Time tD(OFF) (Note 1, 2) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, ISD=5.5A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR ISD = 5.5A, dISD/dt = 100A/μs (Note 1) Reverse Recovery Charge QRR MIN TYP MAX UNIT 400 V 5.5 A 2.0 25 ±100 μA nA 4.0 0.95 V Ω 810 1200 300 pF pF pF 18 6 4 50 51 100 45 nC nC nC ns ns ns ns 300 2.1 1.6 V 5.5 A 22 A ns μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R205-116 .a UF730K-MT Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VDD Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R205-116 .a UF730K-MT Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R205-116 .a UF730K-MT Preliminary Power MOSFET UTC assum es no responsibility for equipm ent failures that result from using products at values that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-116 .a