UNISONIC TECHNOLOGIES CO., LTD UF730-E Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 TO-220 FEATURES * RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF730L-TA3-T UF730G-TA3-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd. Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-A06.B UF730-E Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C) SYMBOL RATINGS UNIT VDSS 400 V VDGR 400 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 5.5 A Pulsed Drain Current (Note 1) IDM 22 A Single Pulse Avalanche Energy (Note 2) EAS 300 mJ Power Dissipation PD 73 W °C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 1.71 UNIT °C/W °C/W 2 of 6 QW-R502-A06.B UF730-E Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage On-State Drain Current (Note 3) SYMBOL BVDSS ID(ON) TEST CONDITIONS VGS=0V, ID=250μA VDS>ID(ON)×RDS(ON)MAX, VGS=10V VDS=Rated BVDSS, VGS=0V VGS=±20V Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=30V, ID≈0.5A, Turn-On Rise Time tR VGS=0~10V, RG=25Ω Turn-Off Delay Time tD(OFF) (Note 3, 4) Turn-Off Fall Time tF Total Gate Charge QG VGS=50V, ID=1.3A, Gate-Source Charge QGS VDS=10V, IG=100μA Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, ISD=5.5A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR ISD = 5.5A, dISD/dt = 100A/μs (Note 3) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 5.5 A 2.0 25 ±100 μA nA 4.0 0.69 0.85 V Ω 615 115 45 630 125 55 pF pF pF 98 104 238 148 31 5.5 10 120 125 250 160 35 ns ns ns ns nC nC nC 1.6 V 5.5 A 22 A 660 4.3 ns μC 140 300 0.93 2.1 3 of 6 QW-R502-A06.B UF730-E Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A06.B UF730-E TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Power MOSFET Sturation Characteristics Output Characteristics 10 VGS=10 V GS=6.0V 6 VGS=5.5V 4 VGS=5.0V Pulse Duration=80μs VGS=10V Duty Cycle = 0.5% Max 8 Drain Current, ID (A) Drain Current, ID (A) 8 10 Pulse Duration=80μs Duty Cycle = 0.5% Max VGS=6.0V 6 VGS=5.5V 4 VGS=5.0V 2 2 VGS=4.5V VGS=4.5V 0 VGS=4.0V VGS=4.0V 0 40 80 120 160 0 200 0 40 80 120 160 200 Drain to Source Voltage, VDS (V) Drain Current, IDR (A) Drain to Source on Resistance, RDS (DN) (Ω) Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-A06.B UF730-E Power MOSFET Capacitance, C (pF) Source to Drain Current, ISD (A) Gate to Source Voltage, VGS (V) TYPICAL CHARACTERISTICS UTC assum es no responsibility for equipm ent failures that result from using products at values that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A06.B