UNISONIC TECHNOLOGIES CO., LTD UF730 Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 TO-251 FEATURES * RDS(ON) = 1Ω@VGS = 10 V * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance TO-252 1 SYMBOL 1 TO-220 TO-220F ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF730L-TA3-T UF730G-TA3-T UF730L-TF3-T UF730G-TF3-T UF730L-TM3-T UF730G-TM3-T UF730L-TN3-R UF730G-TN3-R UF730L-TN3-T UF730G-TN3-T www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd. Package TO-220 TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube 1 of 6 QW-R502-077.E UF730 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C) RATINGS UNIT 400 V 400 V Gate-Source Voltage ±20 V Continuous Drain Current 5.5 A Pulsed Drain Current (Note 1) 22 A Single Pulse Avalanche Energy (Note 2) 300 mJ TO-220 73 Power Dissipation PD W TO-220F 38 TO-251 / TO-252 48 °C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-220 Junction-to-Ambient TO-220F TO-251 / TO-252 TO-220 Junction-to-Case TO-220F TO-251 / TO-252 SYMBOL VDSS VDGR VGSS ID IDM EAS SYMBOL θJA θJC RATINGS 62.5 62.5 110 1.71 3.31 2.6 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS On-State Drain Current (Note 3) ID(ON) Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250μA VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V VGS = ±20V 400 V 5.5 A VDS = VGS, ID = 250μA ID = 3.0A, VGS = 10V 2.0 VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID ≈ 5.5A, RGS = 12Ω, RL = 35Ω (Note 3, 4) VGS = 10V, ID = 5.5A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA 0.8 25 ±100 μA nA 4.0 1.0 V Ω 600 150 40 10 20 35 15 20 3.0 10 pF pF pF 17 29 56 24 35 ns ns ns ns nC nC nC 2 of 6 QW-R502-077.E UF730 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, ISD = 5.5A, Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR ISD = 5.5A, dISD/dt = 100A/μs (Note 3) Reverse Recovery Charge QRR MIN TYP MAX UNIT 140 0.93 300 2.1 1.6 V 5.5 A 22 A 660 4.3 ns μC Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-077.E UF730 Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-077.E UF730 TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Power MOSFET Sturation Characteristics Output Characteristics 10 VGS=10 V GS=6.0V 6 VGS=5.5V 4 VGS=5.0V Pulse Duration=80μs VGS=10V Duty Cycle = 0.5% Max 8 Drain Current, ID (A) Drain Current, ID (A) 8 10 Pulse Duration=80μs Duty Cycle = 0.5% Max VGS=6.0V 6 VGS=5.5V 4 VGS=5.0V 2 2 VGS=4.5V VGS=4.5V 0 VGS=4.0V VGS=4.0V 0 40 80 120 160 0 200 0 40 80 120 160 200 Drain to Source Voltage, VDS (V) Drain Current, IDR (A) Drain to Source on Resistance, RDS (DN) (Ω) Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-077.E UF730 Power MOSFET Capacitance, C (pF) Source to Drain Current, ISD (A) Gate to Source Voltage, VGS (V) TYPICAL CHARACTERISTICS UTC assum es no responsibility for equipm ent failures that result from using products at values that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-077.E