Specification Comparison Vishay Siliconix Si3458BDV vs. Si3458DV Description: Package: Pin Out: N-Channel, 60-V (D-S) MOSFET TSOP-6 Identical Part Number Replacements: Si3458BDV-T1-E3 replaces Si3458DV-T1-E3 Si3458BDV-T1-E3 replaces Si3458DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted SYMBOL Si3458BDV Si3458DV Drain-Source Voltage PARAMETER VDS 60 60 Gate-Source Voltage VGS ± 20 ± 20 TA = 25 °C Continuous Drain Current ID TA = 70 °C Pulsed Drain Current IDM Continuous Source Current (MOSFET Diode Conduction) TA = 25 °C IS TC = 25 °C IS TA = 25 °C Power Dissipation Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient 3.2 2.5 10 15 1.7 NS V A 2.0 2.0 1.3 1.3 TJ and Tstg - 55 to 150 - 55 to 150 °C RthJA 62.5 62.5 °C/W PD TA = 70 °C 3.2 2.5 UNIT W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL Si3458BDV MIN. TYP. Si3458DV MAX. MIN. 3 1 TYP. MAX. UNIT Static Gate-Threshold Voltage VGS(th) 1.5 NS V Gate-Body Leakage IGSS ± 100 ± 100 nA Zero Gate Voltage Drain Current IDSS 1 1 µA On-State Drain Current Drain-Source On-Resistance VGS = 10 V VGS = 10 V VGS = 4.5 V ID(on) RDS(on) 10 10 A 0.082 0.100 0.085 0.100 0.105 0.128 0.110 0.130 Forward Transconductance gfs 12 Diode Forward Voltage VSD 0.8 1.2 NS 1.2 11 8.0 16 8 Ω S V Dynamic Total Gate Charge Qg 7.1 Gate-Source Charge Qgs 1.1 4.0 Gate-Drain Charge Qgd 0.95 2.0 Gate Resistance Rg 2.3 NS 1 nC 3.9 Ω Note NS denotes not specified in original datasheet Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits. Document Number: 69963 Revision: 29-Feb-08 www.vishay.com 1