Si3458DV New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET VDS (V) 60 rDS(on) () ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C) 150 C)a, b ID 2.5 TA = 70C IDM 15 Single Avalanche Current IAS 10 TA = 25C TA = 70C Operating Junction and Storage Temperature Range V 3.2 TA = 25C Pulsed Drain Current Maximum Power Dissipationa, b Unit A 2 PD W 1.3 TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 5 sec Steady State Maximum Junction-to-Lead Steady State Typical Maximum Unit 62.5 RthJA RthJL 106 C/W 35 Notes a. Surface Mounted on FR4 Board. b. t 5 sec. Document Number: 70859 S-61517—Rev. B, 12-Apr-99 www.vishay.com FaxBack 408-970-5600 2-1 Si3458DV New Product Vishay Siliconix Parameter Symbol Test Condition Min V(BR)DSS VDS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1 Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) Forward Transconductancea gfs V VDS = 0 V, VGS = "20 V "100 VDS = 48 V, VGS = 0 V 1 VDS = 48 V, VGS = 0 V, TJ = 150C 50 VDS = 5 V, VGS = 10 V 10 nA mA A VGS = 10 V, ID = 3.2 A 0.085 0.10 VGS = 4.5 V, ID = 2.8 A 0.110 0.13 VDS = 4.5 V, ID = 3.2 A 8 VDS = 30 V, V VGS = 10 V V, ID = 3 3.2 2A 4.0 W S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 8 16 nC C Gate-Drain Charge Qgd 2.0 Turn-On Delay Time td(on) 10 20 tr 10 20 20 40 10 20 Rise Time Turn-Off Delay Time Fall Time td(off) VDD = 30 V V,, RL = 30 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W tf ns Source-Drain Rating Characteristicsb Continuous Current IS 1.7 Pulsed Current ISM 15 Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V trr IF = 1.7 A, di/dt = 100 A/ms A Source-Drain Reverse Recovery Time 50 1.2 V 90 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70859 S-61517—Rev. B, 12-Apr-99 Si3458DV New Product Vishay Siliconix Output Characteristics Transfer Characteristics 15 15 VGS = 10 thru 5 V 12 9 I D – Drain Current (A) I D – Drain Current (A) 12 4V 6 3 9 6 TC = 125C 3 25C 3V 0 0 0 1 2 3 4 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 0.20 600 500 0.16 C – Capacitance (pF) r DS(on) – On-Resistance ( ) –55C VGS = 4.5 V 0.12 VGS = 10 V 0.08 0.04 Ciss 400 300 200 Coss 100 Crss 0 0 0 3 6 9 12 15 0 10 ID – Drain Current (A) r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 2.0 VDS = 30 V ID = 3.2 A 8 6 4 2 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70859 S-61517—Rev. B, 12-Apr-99 30 40 50 60 VDS – Drain-to-Source Voltage (V) Gate Charge 10 20 8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.2 A 1.6 1.2 0.8 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si3458DV New Product Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.16 r DS(on) – On-Resistance ( W ) 0.20 I S – Source Current (A) 20 TJ = 150C TJ = 25C 0.12 0.08 ID = 3.2 A 0.04 0 1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 2 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 25 ID = 250 mA 0.2 20 –0.0 Power (W) V GS(th) Variance (V) 4 –0.2 15 10 –0.4 5 –0.6 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.001 0.01 TJ – Temperature (C) 0.1 10 1 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = RthJA = 106C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70859 S-61517—Rev. B, 12-Apr-99