Specification Comparison Vishay Siliconix Si4804BDY vs. Si4804DY Description: Dual N-Channel, 30-V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4804BDY Replaces Si4804DY Si4804BDY—E3 (Lead Free version) Replaces Si4804DY Si4804BDY-T1 Replaces Si4804DY-T1 Si4804BDY-T1—E3 (Lead Free version) Replaces Si4804DY-T1 Summary of Performance: The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Symbol Si4804BDY Si4804DY Drain-Source Voltage Parameter VDS 30 30 Gate-Source Voltage VGS "20 "20 7.5 7.5 Continuous Drain Current TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25_C Power Dissipation TA = 70_C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient ID Unit V 6 6 IDM 30 20 IS 2.3 1.7 1.7 2.0 2.0 1.3 Tj and Tstg −55 to 150 −55 to 150 _C RthJA 62.5 62.5 _C/W PD A W SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si4804BDY Symbol Min Gate-Threshold Voltage VG(th) 0.8 Gate-Body Leakage IGSS Parameter Typ Si4804DY Max Min 3.0 0.8 Typ Max Unit "100 nA 1 mA Static Zero Gate Voltage Drain Current On-State Drain Current Drain Source On Drain-Source On-Resistance Resistance IDSS VGS = 10 V VGS = 10 V VGS = 4.5 V Forward Transconductance Diode Forward Voltage ID(on) V "100 1 20 rDs(on) D ( ) 20 A 0.017 0.022 0.018 0.022 0.024 0.030 0.024 0.030 gfs 19 VSD 0.75 1.2 0.8 22 1.2 11 13 20 W S V Dynamic Total Gate Charge Qg 7 Gate-Source Charge Qgs 2.9 2 Gate-Drain Charge Qgd 2.5 2.7 Gate Resistance Rg 0.5 nC 1.5 2.6 NS td(on) 9 15 8 16 tr 10 17 10 20 td(off) 19 30 21 40 tf 9 15 10 20 trr 35 55 40 80 W Switching Turn-On Time Turn Off Time Turn-Off Source-Drain Reverse Recovery Time ns NS denotes parameter not specified in original data sheet. Document Number: 72893 22-Mar-04 www.vishay.com 1