Specification Comparison Vishay Siliconix Si4894BDY vs. Si4894DY Description: N-Channel, 30-V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4894BDY-T1 Replaces Si4894DY-T1 Si4894BDY-T1—E3 (Lead (Pb)-Free version) Replaces Si4894DY-T1—E3 Summary of Performance: The Si4894BDY is the replacement for the original Si4894DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Si4894BDY Si4894DY Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS "20 "20 Continuous Drain Current TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25_C Power Dissipation TA = 70_C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Unit V 12 12.5 9.5 10 IDM 40 20 IS 2.3 2.7 2.5 3.0 1.6 1.9 Tj and Tstg −55 to 150 −55 to 150 _C RthJA 50 42 _C/W ID PD A W SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si4894BDY Parameter Symbol Min VGS(th) 1.0 Typ Si4894DY Max Min 3.0 0.8 Typ Max Unit "100 nA 1 mA Static Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current Drain Source On-Resistance Drain-Source On Resistance IDSS VGS = 10 V VGS = 10 V VGS = 4.5 V Forward Transconductance Diode Forward Voltage ID(on) V "100 1 30 rDS(on) DS( ) 30 A 0.009 0.011 0.010 0.012 0.013 0.018 0.015 0.018 0.7 1.1 gfs 32 VSD 0.76 1.1 30 25.4 38 20 30 13.2 20 11.5 17 W S V Dynamic Total Gate Charge VGS = 10 V VGS = 5 V Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 5.3 3.0 4.3 0.9 nC 4.5 1.8 2.7 1 2.4 td(on) 13 20 10 20 tr 10 15 5 10 td(off) 33 50 30 60 tf 10 15 10 20 trr 25 40 30 60 W Switching Turn-On Time Turn Off Time Turn-Off Source-Drain Reverse Recovery Time ns NS denotes parameter not specified in original data sheet. Document Number: 73277 06-Jan-05 www.vishay.com 1