Si3948DV Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 3 mm D1 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 D2 G1 G2 2.85 mm S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si3948DV-T1-E3 (Lead (Pb)-free) Si3948DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C V ± 2.5 ID ± 2.0 IDM ±8 IS 1.05 A 1.15 PD W 0.73 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Symbol t≤5s Steady State Steady State RthJA RthJL Typical Maximum 93 110 130 150 75 90 Unit °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. Document Number: 70969 S09-1816-Rev. B, 14-Sep-09 www.vishay.com 1 Si3948DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit ± 100 nA Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a RDS(on) V VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V 5 µA A VGS = 10 V, ID = 2.5 A 0.085 0.105 VGS = 4.5 V, ID = 2.0 A 0.140 0.175 gfs VDS = 10 V, ID = 2.5 A 4.3 VSD IS = 1.05 A, VGS = 0 V 0.81 1.1 2.1 3.2 Ω S V Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 5.0 V, ID = 1.8 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.7 Turn-On Delay Time td(on) 7 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω IF = 1.05 A, dI/dt = 100 A/µs nC 0.7 11 9 14 13 20 5 8 35 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70969 S09-1816-Rev. B, 14-Sep-09 Si3948DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 TC = - 55 °C VGS = 10 V thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4V 4 25 °C 125 °C 6 4 2 2 3V 2V 0 0 0 1 2 3 4 0 5 1 Output Characteristics 4 5 6 25 30 Transfer Characteristics 300 0.25 250 0.20 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) VGS = 4.5 V 0.15 VGS = 10 V 0.10 0.05 Ciss 200 150 100 Coss 50 Crss 0 0 0 1 2 3 4 5 6 0 7 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 1.6 VDS = 15 V ID = 1.8 A 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 2 6 4 VGS = 10 V ID = 2.5 A 1.4 1.2 1.0 0.8 2 0.6 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70969 S09-1816-Rev. B, 14-Sep-09 4 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si3948DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2 A TJ = 150 °C 1 TJ = 25 °C 0.32 ID = 2.5 A 0.24 0.16 0.08 0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 8 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 6 0.0 - 0.2 4 - 0.4 2 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 1 0.1 TJ - Temperature (°C) 10 30 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70969 S09-1816-Rev. B, 14-Sep-09 Si3948DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70969. Document Number: 70969 S09-1816-Rev. 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