Si9945AEY Vishay Siliconix Dual N-Channel 60-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D2 D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top V iew Ordering Information: Si9945AEY-T1-E3 (Lead (Pb)-free) Si9945AEY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C V ± 3.7 ID ± 3.2 IDM 25 IS 2 A 2.4 PD W 1.7 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Symbol t ≤ 10 s Steady State RthJA Typical Maximum 62.5 93 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 70758 S09-1341-Rev. F, 13-Jul-09 www.vishay.com 1 Si9945AEY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS Typ. Max. Unit 3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 3.7 A 0.06 0.080 VGS = 4.5 V, ID = 3.4 A 0.075 0.100 gfs VDS = 15 V, ID = 3.7 A 11 VSD IS = 2.0 A, VGS = 0 V RDS(on) µA Ω S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 11 VDS = 30 V, VGS = 10 V, ID = 3.7 A 20 nC 2 2 VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 2.0 A, dI/dt = 100 A/µs 9 20 10 20 21 40 8 20 45 80 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70758 S09-1341-Rev. F, 13-Jul-09 Si9945AEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 V thru 5 V TC = - 55 °C 20 25 °C 20 I D - Drain Current (A) I D - Drain Current (A) 4V 15 10 3V 5 150 °C 15 10 5 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 Output Characteristics 5 6 50 60 800 0.16 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 4 Transfer Characteristics 0.20 0.12 VGS = 4.5 V 0.08 400 200 VGS = 10 V 0.04 Ciss Coss Crss 0 0 0 5 10 15 20 25 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2.4 10 2.0 VDS = 30 V ID = 3.7 A 6 4 2 VGS = 10 V ID = 3.7 A 1.6 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) 1.2 0.8 0.4 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70758 S09-1341-Rev. F, 13-Jul-09 8 10 0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si9945AEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 30 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.7 A 10 TJ = 175 °C TJ = 25 °C 0.16 0.12 0.08 0.04 0 1 0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 120 0.6 90 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 0.3 - 0.3 60 30 - 0.6 - 0.9 - 50 - 25 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 93 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 10 2 10 3 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70758. www.vishay.com 4 Document Number: 70758 S09-1341-Rev. F, 13-Jul-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000