RHRP640CC, RHRP650CC, RHRP660CC January 1998 File Number 4464 6A, 400V - 600V Hyperfast Dual Diodes Features RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics (t rr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted hepaticas planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<30ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Planar Construction Formerly developmental type TA49057. Applications • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” • Switching Power Supplies Ordering Information PART NUMBER • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC PACKAGE BRAND RHRP640CC TO-220AB RHRP640C RHRP650CC TO-220AB RHRP650C RHRP660CC TO-220AB RHRP660C • Power Switching Circuits • General Purpose Symbol K NOTE: When ordering, use the entire part number. A1 A2 Package JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 CATHODE (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 RHRP640CC, RHRP650CC, RHRP660CC Absolute Maximum Ratings (Per Leg) TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TC = 152oC Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Square Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 phase, 60Hz Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .TSTG,TJ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . Tpkg RHRP640CC 400 400 400 6 RHRP650CC 500 500 500 6 RHRP660CC 600 600 600 6 UNITS V V V A 12 12 12 A 60 60 60 A 50 10 -65 to 175 50 10 -65 to 175 50 10 -65 to 175 W mJ oC 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (Per Leg) TC = 25oC, Unless Otherwise Specified Electrical Specifications RHRP640CC SYMBOL RHRP660CC MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS IF = 6A - - 2.1 - - 2.1 - - 2.1 V IF = 6A, TC = 150oC - - 1.7 - - 1.7 - - 1.7 V VR = 400V - - 100 - - - - - - µA VR = 500V - - - - - 100 - - - µA VR = 600V - - - - - - - - 100 µA VR = 400V, TC = 150oC - - 500 - - - - - - µA VR = 500V, TC = 150oC - - - - - 500 - - - µA VR = 600V, TC = 150oC - - - - - - - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 30 - - 30 - - 30 ns IF = 6A, dIF/dt = 200A/µs - - 35 - - 35 - - 35 ns ta IF = 6A, dIF/dt = 200A/µs - 16 - - 16 - - 16 - ns tb IF = 6A, dIF/dt = 200A/µs - 8.5 - - 8.5 - - 8.5 - ns QRR IF = 6A, dIF/dt = 200A/µs - 45 - - 45 - - 45 - nC VR = 10V, IF = 0A - 20 - - 20 - - 20 - pF - - 3 - - 3 - - 3 oC/W VF IR trr CJ TEST CONDITION RHRP650CC RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. 2 RHRP640CC, RHRP650CC, RHRP660CC Typical Performance Curves 30 1000 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 10 175oC 100oC 25oC 1.0 0.5 0 1.0 0.5 1.5 2.0 2.5 100 1 0.1 0.01 0 3.0 100oC 10 25oC 100 FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 30 50 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 25 trr 15 300 400 500 600 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE TC = 25oC, dIF/dt = 200A/µs 20 200 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) ta 10 tb TC = 100oC, dIF/dt = 200A/µs 40 trr 30 ta 20 tb 10 5 1 IF, FORWARD CURRENT (A) t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/µs 60 trr 45 30 ta tb 15 0 0.5 1 6 IF, FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT 3 1 6 IF, FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT 75 0 0.5 6 FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV), AVERAGE FORWARD CURRENT (A) 0 0.5 6 5 DC 4 SQ. WAVE 3 2 1 0 140 145 150 155 160 165 170 TC , CASE TEMPERATURE (oC) FIGURE 6. CURRENT DERATING CURVE 175 RHRP640CC, RHRP650CC, RHRP660CC Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuits and Waveforms VGE AMPLITUDE and RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE IF + - IGBT VDD dIF trr dt ta tb 0 VGE t1 0.25 IRM IRM t2 FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE R VAVL + VDD Q1 IL IL DUT I V VDD t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT 4 t1 t2 FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS t RHRP640CC, RHRP650CC, RHRP660CC TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE A INCHES E ØP A1 Q H1 TERM. 4 D 45o E1 D1 L1 b1 L b c MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 D 0.590 0.610 14.99 15.49 - 4.06 - 10.41 - D1 - 0.160 E 0.395 0.410 E1 - 0.030 e 60o 1 2 e1 3 e J1 e1 MILLIMETERS SYMBOL H1 0.100 TYP 0.200 BSC 0.235 0.255 10.04 - 0.76 - 2.54 TYP 5 5.08 BSC 5 5.97 6.47 - J1 0.100 0.110 2.54 2.79 6 L 0.530 0.550 13.47 13.97 - L1 0.130 0.150 3.31 3.81 2 ØP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 7-97. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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