INTERSIL RURD860

RURD840, RURD860, RURD840S, RURD860S
Data Sheet
January 2000
File Number
4033.1
8A, 400V - 600V Ultrafast Diodes
Features
The RURD840, RURD860, RURD840S and RURD860S are
ultrafast dual diodes with soft recovery characteristics
(trr < 60ns). They have low forward voltage drop and are
silicon nitride passivated ion-implanted epitaxial planar
construction.
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Planar Construction
Applications
Formerly developmental type TA09616.
• General Purpose
Ordering Information
PART NUMBER
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Switching Power Supplies
• Power Switching Circuits
Packaging
PACKAGE
BRAND
RURD840
TO-251
RUR840
RURD860
TO-251
RUR860
RURD840S
TO-252
RUR840
RURD860S
TO-252
RUR860
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RURD860S9A.
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
CATHODE
ANODE
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
1
RURD840
RURD840S
400
400
400
8
RURD860
RURD860S
600
600
600
8
UNITS
V
V
V
A
16
16
A
40
40
A
75
20
-65 to 175
75
20
-65 to 175
W
mJ
oC
300
260
300
260
oC
oC
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
RURD840, RURD860, RURD840S, RURD860S
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
RURD840, RURD840S
SYMBOL
TEST CONDITION
RURD860, RURD860S
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
IF = 8A
-
-
1.5
-
-
1.5
V
IF = 8A, TC = 150oC
-
-
1.3
-
-
1.3
V
VR = 400V
-
-
100
-
-
-
µA
VR = 600V
-
-
-
-
-
100
µA
VR = 400V, TC = 150oC
-
-
500
-
-
-
µA
VR = 600V, TC = 150oC
-
-
-
-
-
500
µA
IF = 1A, dIF/dt = 200A/µs
-
-
60
-
-
60
ns
IF = 8A, dIF/dt = 200A/µs
-
-
70
-
-
70
ns
ta
IF = 8A, dIF/dt = 200A/µs
-
32
-
-
32
-
ns
tb
IF = 8A, dIF/dt = 200A/µs
-
21
-
-
21
-
ns
QRR
IF = 8A, dIF/dt = 200A/µs
-
195
-
-
195
-
nC
VR = 10V, IF = 0A
-
25
-
-
25
-
pF
2
oC/W
VF
IR
trr
CJ
RθJC
-
-
2
-
-
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
500
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
40
10
100oC
175oC
25oC
1
0.5
100
175oC
10
100oC
1
25oC
0.1
0.01
0
0.5
1
1.5
2
2.5
VF , FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
2
0
100
200
300
400
500
VR , REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
600
RURD840, RURD860, RURD840S, RURD860S
Typical Performance Curves
(Continued)
60
100
TC = 100oC, dIF/dt = 200A/µs
TC = 25oC, dIF/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
50
40
trr
30
ta
20
tb
10
0
0.5
1
trr
60
40
ta
tb
20
0
0.5
8
4
80
1
IF, FORWARD CURRENT (A)
125
t, RECOVERY TIMES (ns)
TC = 175oC, dIF/dt = 200A/µs
100
trr
50
ta
tb
25
0
0.5
1
4
8
8
DC
6
SQ. WAVE
4
2
0
140
145
150
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
CJ , JUNCTION CAPACITANCE (pF)
80
60
40
20
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
160
165
FIGURE 6. CURRENT DERATING CURVE
100
0
155
TC , CASE TEMPERATURE (oC)
IF, FORWARD CURRENT (A)
0
8
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
75
4
IF, FORWARD CURRENT (A)
170
175
RURD840, RURD860, RURD840S, RURD860S
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
DUT
CURRENT
SENSE
RG
IF
+
VGE
-
IGBT
t1
VDD
dIF
trr
dt
ta
tb
0
0.25 IRM
t2
IRM
FIGURE 8. trr TEST CIRCUIT
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
I = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
t1
t2
t
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
4