RURP6120CC 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE 2 CATHODE ANODE 1 • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated • Planar Construction CATHODE (FLANGE) Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Description Symbol The RURP6120CC is an ultrafast dual diode with soft recovery characteristics (tRR < 70ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction. d This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. A1 A2 PACKAGE AVAILABILITY PART NUMBER RURP6120CC PACKAGE TO-220AB BRAND RUR6120C NOTE: When ordering, use the entire part number. Formerly developmental type TA49039. Absolute Maximum Ratings (per leg) TC = +25oC, Unless Otherwise Specified RURP6120CC UNITS Peak Repetitive Reverse Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 1200 V DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1200 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TC = +140oC 6 A Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Square Wave, 20kHz 12 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 phase, 60Hz 60 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 50 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 10 mj Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to +175 oC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 File Number 4051 Specifications RURP6120CC Electrical Characteristics (per leg) TC = +25oC, Unless Otherwise Specified RURP6120CC LIMITS SYMBOL TEST CONDITION MIN TYP MAX UNITS - - 2.1 V - - 1.9 V - - 100 µA - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 70 ns IF = 6A, dIF/dt = 200A/µs - - 90 ns tA IF = 6A, dIF/dt = 200A/µs - 45 - ns tB IF = 6A, dIF/dt = 200A/µs - 30 - ns QRR IF = 6A, dIF/dt = 200A/µs - 400 - nC VR = 10V, IF = 0A - 22 - pF - - 3 oC/W IF = 6A, TC = +25oC VF IF = 6A, TC = +150oC VR = 1200V, TC = +25oC IR VR = 1200V, TC = tRR CJ +150oC RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 ≥ 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) ≤ R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 dIF dt tRR tA tB 0 DUT Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 R3 -V4 VRM FIGURE 2. tRR WAVEFORMS AND DEFINITIONS FIGURE 1. tRR TEST CIRCUIT 2 RURP6120CC Typical Performance Curves 500 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 30 10 +100oC +175oC +25oC 1 0.5 0 0.5 1.5 1 2 2.5 10 +100oC 1 0.1 +25oC 0.01 0.001 3 +175oC 100 0 200 FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 60 tRR 30 tA 15 tB 0 0.5 1 IF , FORWARD CURRENT (A) tRR 50 tA 25 tB 1 6 IF , FORWARD CURRENT (A) FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 75 0 0.5 125 100 tRR 75 0 0.5 1200 TC = +175oC, dIF/dt = 200A/µs 150 25 1000 100 6 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC 50 800 TC = +100oC, dIF/dt = 200A/µs 125 75 45 600 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +25oC, dIF/dt = 200A/µs 90 400 VR , REVERSE VOLTAGE (V) VF , FORWARD VOLTAGE (V) tA tB 1 IF , FORWARD CURRENT (A) 6 6 DC 5 SQ. WAVE 4 3 2 1 0 100 115 130 145 160 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE 3 175 RURP6120CC Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 100 80 60 40 20 0 0 150 100 50 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 130Ω L R + VDD 1MΩ DUT 12V VAVL Q2 130Ω CURRENT SENSE IL IL I V VDD 12V t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 4 RURP6120CC Plastic Packages TO-220AB A 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE E ØP A1 INCHES Q H1 TERM. 4 D MIN MAX NOTES 0.180 4.32 4.57 - 0.048 0.052 1.22 1.32 - 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 b1 D 0.590 0.610 14.99 15.49 - b D1 - 0.160 4.06 - E 0.395 0.410 E1 - 0.030 c 60o 2 MAX 0.170 0.030 45o 1 MIN A b D1 L SYMBOL A1 E1 L1 MILLIMETERS 3 e J1 e1 10.04 - 10.41 - 0.76 - e 0.100 TYP 2.54 TYP 5 e1 0.200 BSC 5.08 BSC 5 H1 0.235 0.255 5.97 6.47 - J1 0.100 0.110 2.54 2.79 6 LEAD 2. CATHODE L 0.530 0.550 13.47 13.97 - LEAD 3. ANODE 2 L1 0.130 0.150 3.31 3.81 2 TERM. 4. CATHODE ØP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - LEAD 1. ANODE 1 NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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