BCV64B PNP general-purpose double transistor Rev. 4 — 2 August 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV64B Package PNP complement NXP JEITA SOT143B - BCV63B 1.2 Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V and 6 V) AEC-Q101 qualified Small SMD plastic package 1.3 Applications General-purpose switching and amplification For use in Schmitt trigger applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - −100 mA V Per transistor collector current IC Transistor TR1 VCEO collector-emitter voltage open base - - −30 hFE DC current gain VCE = −5 mV; IC = −2 mA 220 - 475 - - −6 220 - 475 Transistor TR2 VCEO hFE [1] collector-emitter voltage open base DC current gain VCE = −700 V; IC = −2 mA Due to matched dies, hFE values for TR2 are the same as for TR1. [1] V BCV64B NXP Semiconductors PNP general-purpose double transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 collector TR2 and base TR1 2 collector TR1 3 emitter TR1 and TR2 4 base TR2 4 3 Graphic symbol 2 1 TR1 TR2 1 2 3 4 006aab230 3. Ordering information Table 4. Ordering information Type number BCV64B Package Name Description Version - plastic surface-mounted package; 4 leads SOT143B 4. Marking Table 5. Marking codes Type number Marking code[1] BCV64B *C6 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCV64B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 2 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VEBO emitter-base voltage - −6 V IC collector current - −100 mA ICM peak collector current - −200 mA IB base current - −100 mA open collector Transistor TR1 VCBO collector-base voltage open emitter - −30 V VCEO collector-emitter voltage open base - −30 V Transistor TR2 VCBO collector-base voltage open emitter - −6 V VCEO collector-emitter voltage open base - −6 V Ptot total power dissipation Tamb ≤ 25 °C - 250 mW Per device [1] Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB). 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] BCV64B Product data sheet [1] Min Typ Max Unit - - 500 K/W Device mounted on an FR4 PCB. All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 7. Characteristics Table 8. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off current VCB = −30 V; IE = 0 A - - −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C - - −5 μA VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - −75 −300 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - −700 - mV Per transistor ICBO [2] Transistor TR1 hFE DC current gain VCE = −5 V; IC = −2 mA 220 - 475 VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −5 mA - −250 −650 mV VBEsat base-emitter saturation voltage IC = −100 mA; IB = −5 mA [2] - −850 - mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V [3] −600 −650 −750 mV IC = −10 mA; VCE = −5 V [3] - - −820 mV fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 4 - pF 220 - 475 - −250 - mV - −700 - mV Transistor TR2 BCV64B Product data sheet hFE DC current gain VCE = −700 mV; IC = −2 mA VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −5 mA VBE base-emitter voltage IC = −2 mA; VCE = −700 mV [1] [3] [1] Due to matched dies, hFE values for TR2 are the same as for TR1. [2] VBEsat decreases by about 1.7 mV/K with increasing temperature. [3] VBE decreases by about 2 mV/K with increasing temperature. All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 4 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor mgt715 1000 hFE 800 mgt716 −1200 VBE (mV) −1000 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 IC (mA) VCE = −5 V −10−1 −1 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 1. −10 DC current gain as a function of collector current; typical values mgt717 −104 VCEsat (mV) Fig 2. Base-emitter voltage as a function of collector current; typical values mgt718 −1200 VBEsat (mV) −1000 (1) −800 −103 (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 −102 0 −10−1 −103 −1 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Collector-emitter saturation voltage as a function of collector current; typical values BCV64B Product data sheet −102 −103 IC (mA) (1) Tamb = 150 °C Fig 3. −10 Fig 4. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 8. Application information Rc Rc 1 R1 4 2 Vo TR1 TR2 3 R2 3 Vi mgd828 Fig 5. Schmitt trigger application 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BCV64B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 6 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 10. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm Fig 6. 04-11-16 Package outline SOT143B 11. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BCV64B [1] BCV64B Product data sheet Package SOT143B Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 15. All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 7 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 12. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 solder paste 3 occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 Fig 7. sot143b_fr Reflow soldering footprint SOT143B 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 Fig 8. BCV64B Product data sheet sot143b_fw Wave soldering footprint SOT143B All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 8 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 13. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCV64B v.4 20100802 Product data sheet - BCV64B_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1 “Product profile”: amended. Section 3 “Ordering information”: added. Section 4 “Marking”: updated. Figure 1, 2, 3 and 4: added. Section 8 “Application information”: added. Section 9 “Test information”: added. Figure 6: superseded by minimized package outline drawing. Section 11 “Packing information”: added. Section 12 “Soldering”: added. Section 14 “Legal information”: updated. BCV64B_3 19990521 Product specification - BCV64_CNV_2 BCV64_CNV_2 19970310 Product specification - - BCV64B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 9 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BCV64B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 10 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCV64B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 2 August 2010 © NXP B.V. 2010. All rights reserved. 11 of 12 BCV64B NXP Semiconductors PNP general-purpose double transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 August 2010 Document identifier: BCV64B