DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 12 2002 Feb 04 NXP Semiconductors Product data sheet BC856W; BC857W; BC858W PNP general purpose transistors FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. 3 handbook, halfpage 3 MARKING TYPE NUMBER 1 MARKING CODE(1) 2 BC856W 3D* BC856AW 3A* 1 BC856BW 3B* Top view BC857W 3H* BC857AW 3E* BC857BW 3F* BC857CW 3G* BC858W 3M* Fig.1 Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. 2002 Feb 04 2 2 MAM048 Simplified outline (SOT323; SC70) and symbol. NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC856W − −80 V BC857W − −50 V BC858W − −30 V BC856W − −65 V BC857W − −45 V BC858W − −30 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Refer to SOT323 standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 Note 1. Refer to SOT323 standard mounting conditions. 2002 Feb 04 3 VALUE UNIT 625 K/W NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − −1 −15 nA − − −4 μA − − −100 nA BC856W 125 − 475 BC857W; BC858W 125 − 800 BC856AW; BC857AW 125 − 250 BC856BW; BC857BW 220 − 475 BC857CW 420 − 800 IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA; − note 1 −250 −600 mV IC = −10 mA; IB = −0.5 mA − −700 − mV IC = −100 mA; IB = −5 mA; − note 1 −850 − mV IC = −2 mA; VCE = −5 V −600 −650 −750 mV IC = −10 mA; VCE = −5 V − − −820 mV VEB = −5 V; IC = 0 hFE DC current gain IC = −2 mA; VCE = −5 V VBE MAX. VCB = −30 V; IE = 0; Tj = 150 °C emitter-base cut-off current VBEsat TYP. VCB = −30 V; IE = 0 collector-base cut-off current IEBO VCEsat MIN. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 3 pF Ce emitter capacitance VEB = −0.5 V; IC = Ic = 0; f = 1 MHz − − 12 pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz F noise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2002 Feb 04 4 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W MGT711 500 MGT712 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 I C (mA) −10−1 BC857AW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857AW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGT713 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 −102 −103 I C (mA) MGT714 handbook, halfpage −102 (1) (2) (3) −400 (1) −200 (3) (2) −1 −10 0 −10−1 −102 −103 I C (mA) −1 BC857AW; IC/IB = 20. (1) Tamb = 150 °C. BC857AW; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. Fig.4 Fig.5 −10 −102 −103 I C (mA) (3) Tamb = 150 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 −10 Base-emitter voltage as a function of collector current; typical values. −600 −10 −10−1 −1 5 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W MGT715 1000 MGT716 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 I C (mA) −10−1 −1 BC857BW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857BW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. MGT717 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 −10 −102 −103 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGT718 handbook, halfpage (1) (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 BC857BW; IC/IB = 20. (1) Tamb = 150 °C. BC857BW; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. Fig.8 Fig.9 −102 −103 I C (mA) (3) Tamb = 150 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 −10 6 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W MGT719 1000 MGT720 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE (1) 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 0 −10−2 −200 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857CW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857CW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. MGT721 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 MGT722 handbook, halfpage (1) (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857CW; IC/IB = 20. (1) Tamb = 150 °C. BC857CW; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 (3) Tamb = 150 °C. 7 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2002 Feb 04 REFERENCES IEC JEDEC EIAJ SC-70 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Feb 04 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp10 Date of release: 2002 Feb 04 Document order number: 9397 750 09168