DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet Supersedes data of 2003 Apr 09 2004 Jan 16 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING handbook, halfpage MARKING CODE(1) TYPE NUMBER BC856 3D* BC856A 3A* BC856B 3B* BC857 3H* BC857A 3E* BC857B 3F* BC857C 3G* BC858B 3K* 3 3 1 2 1 Top view 2 MAM256 Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BC856 − plastic surface mounted package; 3 leads SOT23 BC857 − plastic surface mounted package; 3 leads SOT23 BC858 − plastic surface mounted package; 3 leads SOT23 2004 Jan 16 2 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC856 − −80 V BC857 − −50 V BC858 − −30 V BC856 − −65 V BC857 − −45 V BC858 − −30 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. 2004 Jan 16 3 TYPICAL UNIT 500 K/W NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − −1 −15 nA − − −4 μA − − −100 nA BC856 125 − 475 BC857 125 − 800 BC856A; BC857A 125 − 250 BC856B; BC857B; BC858B 220 − 475 BC857C 420 − 800 IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA; − note 1 −250 −650 mV IC = −10 mA; IB = −0.5 mA − −700 − mV IC = −100 mA; IB = −5 mA; − note 1 −850 − mV IC = −2 mA; VCE = −5 V −600 −650 −750 mV IC = −10 mA; VCE = −5 V − − −820 mV VEB = −5 V; IC = 0 hFE DC current gain IC = −2 mA; VCE = −5 V VBE MAX. VCB = −30 V; IE = 0; Tj = 150 °C emitter-base cut-off current VBEsat TYP. VCB = −30 V; IE = 0 collector-base cut-off current IEBO VCEsat MIN. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 4.5 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz F noise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 2 10 dB Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jan 16 4 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 MGT711 500 MGT712 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 I C (mA) −10−1 BC857A; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857A; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGT713 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 −102 −103 I C (mA) MGT714 handbook, halfpage −102 (1) (2) (3) −400 (1) −200 (3) (2) −1 −10 0 −10−1 −102 −103 I C (mA) −1 BC857A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857A; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. Fig.4 Fig.5 −10 −102 −103 I C (mA) (3) Tamb = 150 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 16 −10 Base-emitter voltage as a function of collector current; typical values. −600 −10 −10−1 −1 5 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 MGT715 1000 MGT716 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 I C (mA) −10−1 BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857B; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. MGT717 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 −1 −10 −102 −103 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGT718 handbook, halfpage (1) (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 BC857B; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857B; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. Fig.8 Fig.9 −102 −103 I C (mA) (3) Tamb = 150 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 16 −10 6 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 MGT719 1000 MGT720 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE (1) 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 0 −10−2 −200 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857C; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857C; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. MGT721 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 MGT722 handbook, halfpage (1) (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857C; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857C; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 16 (3) Tamb = 150 °C. 7 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 16 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 8 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Jan 16 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/06/pp10 Date of release: 2004 Jan 16 Document order number: 9397 750 12397