BSP315P SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage • Drain-Source on-state resistance RDS(on) Enhancement mode • Avalanche rated VDS ID Continuous drain current -60 V 0.8 Ω -1.17 A • Logic Level • dv/dt rated 4 Pin 1 Pin2/4 PIN 3 G D S • Qualified according to AEC Q101 3 2 • Halogenfree according to IEC61249221 Type BSP315P Package PG-SOT223 1 VPS05163 Tape and Reel Information Marking Packaging H6327: 1000 pcs/reel BSP315P Non dry Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value ID Continuous drain current A T A = 25 °C -1.17 T A = 70 °C -0.94 ID puls Pulsed drain current Unit -4.68 T A = 25 °C Avalanche energy, single pulse EAS 24 I D = -1.17 A , V DD = -25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax EAR 0.18 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55...+150 °C mJ kV/µs I S = -1.17 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class; JESD22-A114-HBM Rev.1.7 Class 0 Page 1 2012-11-26 BSP315P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) RthJA SMD version, device on PCB: K/W @ min. footprint - - 115 @ 6 cm 2 cooling area 1) - - 70 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -160 µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.8 1.4 Ω RDS(on) - 0.5 0.8 Ω Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -4.5 V, I D = -0.89 A Drain-Source on-state resistance VGS = -10 V, I D = -1.17 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.7 Page 2 2012-11-26 BSP315P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 0.7 1.4 - S Ciss - 130 160 pF Coss - 40 50 Crss - 17 21 td(on) - 24 36 tr - 9 14 td(off) - 32 48 tf - 19 28 Dynamic Characteristics Transconductance VDS≤2*I D*RDS(on)max , ID = -0.89 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Rise time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Turn-off delay time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Fall time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Rev.1.7 Page 3 2012-11-26 BSP315P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 0.7 1.1 Qgd - 1.8 2.6 Qg - 5.2 7.8 V(plateau) - -3.14 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -1.17 A Gate to drain charge VDD = -48 V, ID = -1.17 A Gate charge total VDD = -48 V, ID = -1.17 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V, ID = -1.17 A Parameter Symbol Values Unit min. typ. max. IS - - -1.17 ISM - - -4.68 VSD - -0.97 -1.3 V trr - 30.5 46 ns Qrr - 36 54 µC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -1.17 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev.1.7 Page 4 2012-11-26 BSP315P Power Dissipation Drain current Ptot = f (TA) ID = f(TA ) parameter :VGS ≥ −10V BSP 315 P BSP 315 P -1.3 1.9 A W -1.1 1.6 -1.0 1.4 1.2 ID Ptot -0.9 -0.8 -0.7 1.0 -0.6 0.8 -0.5 0.6 -0.4 -0.3 0.4 -0.2 0.2 -0.1 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T -10 1 160 BSP 315 P 10 2 tp = 280.0µs BSP 315 P K/W D A 10 1 DS ( ID on ) = V -10 0 Z thJC DS /I 1 ms R 10 ms 10 0 D = 0.50 0.20 -10 -1 0.10 0.05 10 -1 0.02 single pulse 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS Rev.1.7 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 5 2012-11-26 BSP315P Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS BSP 315 P -2.8 BSP 315 P 2.6 Ptot = 2W Ω A -2.4 VGS [V] a -2.5 e d -2.2 ID -2.0 -1.8 -1.6 c -1.4 -1.2 -1.0 -0.8 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -5.5 h -6.0 i -6.5 j -7.0 k -8.0 b l -10.0 a b c d 2.2 2.0 RDS(on) li kj g f h 1.8 1.6 1.4 1.2 1.0 0.8 e 0.6 -0.6 0.4 -0.4 a -0.2 0.2 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.0 -5.0 g i h k j lk j VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.4 -0.8 -1.2 g h i -5.5 -6.0 -6.5 -7.0 -1.6 -2.0 VDS f l -8.0 -10.0 A -2.6 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS≥ 2 x I D x RDS(on)max gfs = f(ID); Tj =25°C parameter: tp = 80 µs parameter: gfs 2.5 -3.0 A S ID gfs -2.0 1.5 -1.5 1.0 -1.0 0.5 -0.5 0.0 0.0 -1.0 -2.0 -3.0 -4.0 V 0.0 0.0 -6.0 1.0 1.5 2.0 A 3.0 ID VGS Rev.1.7 0.5 Page 6 2012-11-26 BSP315P Drain-source on-resistance Gate threshold voltage RDS(on) = f (T j) VGS(th) = f (Tj) parameter:I D = -1.17 A, V GS = -10 V parameter: VGS = VDS , ID = -160 µA BSP 315 P 2.1 -3.0 1.8 V Ω V GS(th) RDS(on) 1.6 1.4 98% -2.0 1.2 typ 1.0 98% -1.5 typ -1.0 0.8 2% 0.6 0.4 -0.5 0.2 0.0 -60 -20 20 60 °C 100 0.0 -60 180 -20 20 60 100 Tj 160 °C Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 1 pF BSP 315 P A Ciss -10 0 C IF 10 2 Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V -10 -2 0.0 -40 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev.1.7 -0.4 Page 7 2012-11-26 BSP315P Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = -1.17 A , V DD = -25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID = -1.17 A pulsed BSP 315 P 25 -16 V mJ VGS E AS -12 15 -10 -8 10 0,2 VDS max -6 0,8 VDS max -4 5 -2 0 25 45 65 85 105 125 0 0.0 165 °C 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0 QGate Tj Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP 315 P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Rev.1.7 Page 8 2012-11-26 BSP315P Rev.1.7 Page 9 2012-11-26