TPH3006PD PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.15 Qrr (nC) GaN Power Low-loss Switch 54 D Features Low Qrr Free-wheeling diode not required Quiet Tab™ for reduced EMI at high dv/dt GSD pin layout improves high speed design RoHS compliant High frequency operation G S D Applications TO-220 Package Compact DC-DC converters AC motor drives Battery chargers Switch mode power supplies Absolute Maximum Ratings (TC=25 °C unless otherwise stated) Symbol Parameter Limit Value Unit ID25°C Continuous Drain Current @TC=25 °C 17 A ID100°C Continuous Drain Current @TC=100 °C 12 A Pulsed Drain Current (pulse width:100 s) 60 A IDM VDSS Drain to Source Voltage 600 V VTDS Transient Drain to Source Voltage a 750 V VGSS Gate to Source Voltage ±18 V PD25°C Maximum Power Dissipation 96 W Case -55 to 150 °C Junction -55 to 175 °C -55 to 150 °C 260 °C TC TJ TS TCsold Operating Temperature Storage Temperature Soldering peak Temperature b Thermal Resistance Symbol Parameter RΘJC Junction-to-Case RΘJA Junction-to-Ambient Typical Unit 1.55 °C /W 62 °C /W Notes a: For 1 usec, duty cycle D=0.1 b: For 10 sec, 1.6mm from the case July 27, 2013, DA TPH3006PD www.transphormusa.com 1 TPH3006PD Electrical Characteristics Symbol (TC=25 °C unless otherwise stated) Parameter Min Typical Max Unit Test Conditions 600 - - V VGS=0 V 1.35 1.8 2.35 V VDS=VGS, ID=1 mA - 0.15 0.18 Ω VGS=8V, ID =11A, TJ = 25 °C - 0.33 - Ω VGS=8V, ID =11A,TJ = 175 °C - 2.5 90 µA VDS=600V, VGS=0V, TJ = 25 °C - 10 - µA VDS=600V, VGS=0V, TJ = 150 °C - - 100 Static VDSS-MAX VGS(th) RDS(on) RDS(on) IDSS IDSS IGSS Maximum Drain-Source Voltage Gate Threshold Voltage Drain-Source On-Resistance (TJ = 25 °C) Drain-Source On-Resistance (TJ = 175 °C) Drain-to-Source Leakage Current, TJ = 25 °C Drain-to-Source Leakage Current, TJ = 150 °C Gate-to-Source Forward Leakage Current Gate-to-Source Reverse Leakage Current nA - - -100 VGS= 18 V VGS= -18 V Dynamic CISS Input Capacitance - 740 - COSS Output Capacitance - 133 - CRSS Reverse Transfer Capacitance - 3.6 - CO(er) Output Capacitance, energy related a - 56 - CO(tr) Output Capacitance, time related a - 110 - Qg Qgs Total Gate Charge b Gate-Source Charge - 6.2 2.1 9.3 - Qgd Gate-Drain Charge - 2.2 - td(on) Turn-On Delay - 4 - tr Td(off) tf Rise Time Turn-Off Delay Fall Time - 3 10.5 3.5 - VGS=0 V, VDS=100 V, f =1 MHz pF VGS=0 V, VDS=0 V to 480 V nC VDS =100 V a, VGS= 0-4.5 V, ID = 11 A ns VDS =480 V , VGS= 0-10 V, ID = 11 A, RG= 2 Ω Reverse operation IS Reverse Current - - 11 A VGS=0 V, TJ=100 oC VSD Reverse Voltage - 2.3 2.8 V VGS=0 V, IS=11 A, TJ=25 oC VSD Reverse Voltage - 1.6 1.9 V VGS=0 V, IS=5.5 A, TJ=25 oC trr Reverse Recovery Time - 30 - ns Qrr Reverse Recovery Charge - 54 - nC IS=11 A, VDD=480 V, di/dt =450 A/s, TJ=25 oC Notes a: Fixed while VDS is rising from 0 to 80% VDSS ; b: Qg does not change for VDS>100 V. July 27, 2013, DA TPH3006PD www.transphormusa.com 2