UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary Power MOSFET 170mA, 100V N-CHANNEL POWER MOSFET 3 DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with low CRSS. The UTC BSS123 is suitable for Automotive and Other Applications Requiring. 2 1 SOT-23 (EIAJ SC-59) FEATURES * RDS(on) < 6.0Ω @ VGS=10V, ID=100mA * Low CRSS SYMBOL ORDERING INFORMATION Ordering Number Note: BSS123G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R209-133.a BSS123 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Continuous VGSS ±20 V Gate-Source Voltage Non-Repetitive VGSM ±40 Vpk Continuous (Note 1) ID 0.17 A Drain Current Pulsed (Note 2) IDM 0.68 A TA=25°C (Note 3) 225 mW Power Dissipation PD Derate above 25°C 1.8 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA Junction to Ambient RATINGS 556 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS ID=250µA, VGS=0V VDS=100V, VGS=0V, TJ=25°C VDS=100V, VGS=0V, TJ=125°C VGS=+20V, VDS=0V MIN TYP MAX UNIT 100 Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=1mA 1.6 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=100mA DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VCC=30V, IC=0.28A, VGS=10V, RGS=50Ω Turn-OFF Delay Time tD(OFF) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ID=0.34A, VGS=0V Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. 3. FR−5=1.0×0.75×0.062 in. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw V 15 µA 60 µA ±100 nA 2.6 6.0 V Ω 20 9.0 4.0 pF pF pF 20 40 ns ns 1.3 V 2 of 3 QW-R209-133.a BSS123 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R209-133.a