BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel SAs Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 0.17 TA=70°C 0.14 Pulsed drain current Unit I D puls 0.68 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation V Class 1a Ptot 0.36 W -55... +150 °C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2010-05-12 BSS123 Rev. 1.41 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJA K/W at minimum footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =250µA Gate threshold voltage, VGS = VDS ID=50µA Zero gate voltage drain current µA I DSS VDS=100V, VGS=0, Tj=25°C - - 0.01 VDS=100V, VGS=0, Tj=150°C - - 5 I GSS - - 10 nA RDS(on) - 4 10 Ω RDS(on) - 3 6 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2010-05-12 BSS123 Rev. 1.41 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.09 0.19 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.14A Input capacitance Ciss VGS=0, VDS=25V, - 55 69 Output capacitance Coss f=1MHz - 8.5 10.6 Reverse transfer capacitance Crss - 5 6.3 Turn-on delay time td(on) VDD=50V, VGS=10V, - 2.7 4 Rise time tr ID=0.17A, RG=6Ω - 3.1 4.6 Turn-off delay time td(off) - 9.9 14.8 Fall time tf - 25 37 - 0.055 - 0.77 1.15 - 1.78 2.67 V(plateau) VDD =80V, ID = 0.17 A - 2.6 - V IS - - 0.17 A - - 0.68 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =80V, ID =0.17A VDD =80V, ID =0.17A, 0.082 nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.81 1.2 V Reverse recovery time trr VR=50V, I F=lS , - 27.6 41.1 ns Reverse recovery charge Qrr diF/dt=100A/µs - 10.5 15.7 nC Page 3 2010-05-12 BSS123 Rev. 1.41 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V 0.38 BSS123 BSS123 0.18 W A 0.32 0.14 0.12 0.24 ID P tot 0.28 0.1 0.2 0.08 0.16 0.12 0.06 0.08 0.04 0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 10 °C 1 BSS123 10 3 BSS123 K/W A 10 2 0 /ID ID = RD S n (o V tp = 120.0µs DS Z thJA 10 ) 1 ms 10 -1 10 1 10 0 D = 0.50 10 ms 0.20 10 -1 0.10 0.05 10 -2 0.02 10 -2 10 -3 0 10 10 1 0.01 single pulse DC 10 2 V 10 3 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2010-05-12 BSS123 Rev. 1.41 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS A 0.6 0.55 ID 0.5 0.45 0.4 20 10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V Ω 16 R DS(on) 0.7 14 12 10 0.35 0.3 8 0.25 6 0.2 0.15 4 0.1 2 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 0.1 0.2 0.3 0.4 0.5 A VDS 0.7 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.7 0.4 A S 0.3 ID gfs 0.5 0.25 0.4 0.2 0.3 0.15 0.2 0.1 0.1 0 0 0.05 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 ID Page 5 2010-05-12 BSS123 Rev. 1.41 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.17 A, VGS = 10 V parameter: VGS = VDS ; ID =50µA 24 BSS123 2.2 Ω V 98% 1.8 18 V GS(th) R DS(on) 20 16 1.6 1.4 typ. 14 1.2 12 1 10 2% 0.8 8 98% 0.6 6 0.4 4 typ 0.2 2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C Tj 160 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 0 pF BSS123 A 10 1 10 -1 Ciss IF 2 C 10 Coss 10 -2 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 VDS 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2010-05-12 BSS123 Rev. 1.41 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , V(BR)DSS = f (Tj) ID = 0.17 A pulsed, Tj = 25 °C 16 BSS123 BSS123 120 V V (BR)DSS V V GS 12 10 114 112 110 108 106 8 0.2 VDS max 104 0.5 VDS max 6 102 0.8 VDS max 100 98 4 96 94 2 92 0 0 0.4 0.8 1.2 1.6 2 nC 2.8 QG 90 -60 -20 20 60 100 °C 180 Tj Page 7 2010-05-12 BSS123 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Pag 8 2010-05-12