DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN BSS123 SYMBOL PARAMETER CONDITIONS UNIT VDS drain-source voltage 100 V ID drain current DC value 150 mA RDS(on) drain-source on-resistance ID = 120 mA VGS = 10 V 6 Ω VGS(th) gate-source threshold voltage ID = 1 mA VGS = VDS 2.8 V PIN CONFIGURATION handbook, 2 columns 3 ndbook, halfpage d DESCRIPTION g 1 gate 2 source 1 3 drain Top view 2 MBB076 - 1 MSB003 Marking: SA. Fig.1 Simplified outline and symbol. April 1995 MAX. 2 s Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSS123 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 100 V ±VGSO gate-source voltage open drain − 20 V ID drain current DC value − 150 mA IDM drain current peak value − 600 mA Ptot total power dissipation up to Tamb = 25 °C − 250 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER from junction to ambient (note 1) 500 Note 1. Device mounted on a FR4 printboard. April 1995 VALUE 3 UNIT K/W Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSS123 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 µA VGS = 0 100 − − V IDSS drain-source leakage current VDS = 60 V VGS = 0 − − 10 nA ±IGSS gate-source leakage current ±VGS = 20 V VDS = 0 − − 10 nA VGS(th) gate-source threshold voltage ID = 1 mA VGS = VDS 0.8 − 2.8 V RDS(on) drain-source on-resistance ID = 120 mA VGS = 10 V − 3 6 Ω Yfs transfer admittance ID = 120 mA VDS = 25 V 80 140 − mS Ciss input capacitance VDS = 25 V VGS = 0 f = 1 MHz − 24 40 pF Coss output capacitance VDS = 25 V VGS = 0 f = 1 MHz − 15 25 pF Crss feedback capacitance VDS = 25 V VGS = 0 f = 1 MHz − 4 10 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 200 mA VDD = 50 V VGS = 0 to 10 V − 4 10 ns toff turn-off time ID = 250 mA VDD = 50 V VGS = 0 to 10 V − 10 20 ns April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VDD = 50 V handbook, halfpage BSS123 handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID OUTPUT 50 Ω 10 % MSA631 ton toff MBB692 Fig.2 Switching time test circuit. April 1995 Fig.3 Input and output waveforms. 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSS123 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1995 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSS123 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. 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