PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 11 September 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY 2. Features and benefits • • • • • High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • Power management Loadswitch Linear mode voltage regulator Backlighting applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 100 V IC collector current - - 3 A ICM peak collector current single pulse; tp ≤ 1 ms - - 8 A RCEsat collector-emitter saturation resistance IC = 1 A; IB = 50 mA; pulsed; - 90 150 mΩ - 75 110 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline Graphic symbol C mb B E 1 2 3 4 sym123 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number PHPT61003NY Package Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PHPT61003NY 1003NAB PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 100 V VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 7 V IC collector current - 3 A ICM peak collector current - 8 A IB base current - 0.5 A Ptot total power dissipation [1] - 1.25 W [2] - 3 W [3] - 5 W [4] - 25 W single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] [4] Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm . Device mounted on an ceramic PCB; Al2O3; standard footprint. Power dissipation from junction to mounting base. aaa-010424 8 Ptot (W) 6 (1) 4 (2) 2 (3) 0 -75 25 125 Tamb (°C) 225 (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. 2 Power derating curves PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 115 K/W [2] - - 50 K/W [3] - - 30 K/W - - 6 K/W thermal resistance from junction to solder point [1] [2] [3] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm . Device mounted on an ceramic PCB; Al2O3; standard footprint. aaa-010427 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 10 0.5 0.1 0.05 0.02 1 0.01 10-1 10-5 0.25 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor aaa-010428 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 10 0.33 0.5 0.2 0.1 0.05 1 0.01 10-1 10-5 0.02 0.25 0 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 80 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 10 V; IC = 500 mA; tp ≤ 300 µs; 150 250 - 80 250 - 20 100 - 10 40 - - 90 150 mV - 225 330 mV - 90 150 mΩ - 75 110 mΩ - 0.86 1 V - 1 1.2 V δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCE = 10 V; IC = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCE = 10 V; IC = 2 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pused VCE = 10 V; IC = 3 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCEsat collector-emitter saturation voltage IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C RCEsat collector-emitter saturation resistance IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEsat base-emitter saturation IC = 1 A; IB = 50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = 2 V; IC = 0.1 A; Tamb = 25 °C - 0.67 0.85 V td delay time VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; - 20 - ns tr rise time IBoff = -0.05 A; Tamb = 25 °C - 300 - ns ton turn-on time - 320 - ns ts storage time - 830 - ns tf fall time - 470 - ns toff turn-off time - 1300 - ns PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor Symbol Parameter Conditions Min Typ Max Unit fT transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz; - 140 - MHz - 11 - pF Tamb = 25 °C Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C aaa-010261 400 hFE aaa-010267 3 (1) IB = 50 mA 45 IC (A) 300 40 35 30 2 (2) 200 25 20 15 10 (3) 1 5 100 0 10-1 1 10 102 0 103 104 IC (mA) VCE = 10 V 1 2 3 4 VCE (V) 5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 5. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. 0 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor aaa-010262 1.2 aaa-010265 1.4 VBE (V) VBEsat (V) (1) 0.8 1.0 (2) (1) (3) 0.4 0.6 (2) (3) 0 10-1 Fig. 6. 1 102 10 103 0.2 10-1 104 105 IC (mA) 1 102 10 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig. 7. aaa-010263 1 103 104 105 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values aaa-010264 10 VCEsat (V) VCEsat (V) 1 10-1 (2) (1) (1) (2) (3) 10-1 (3) 10-2 10-2 10-3 10-1 Fig. 8. 1 10 102 10-3 10-1 103 104 IC (mA) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values PHPT61003NY Product data sheet Fig. 9. 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 11 September 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor aaa-010266 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) 1 aaa-010268 103 1 (2) 10-1 10-2 10-1 (1) (3) 1 10 102 (2) 10-1 10-2 10-1 103 104 IC (mA) (3) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PHPT61003NY Product data sheet 10 102 103 104 IC (mA) Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 12. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 13. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669) PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor Wave soldering footprint information for LFPAK56 package SOT669 4.826 1.78 1.72 2.1 1.4 0.6 (x4) 1.27 0.635 solder lands Dimensions in mm Issue date 15-04-13 15-04-16 sot669_fw Fig. 16. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT61003NY v.4 20150911 Product data sheet - PHPT61003NY v.3 Modifications: • • PHPT61003NY v.3 20140203 Product data sheet - PHPT61003NY v.2 PHPT61003NY v.2 20131213 Product data sheet - PHPT61003NY v.1 PHPT61003NY v.1 20140113 Product data sheet - PHPT61003NY Product data sheet Editorial update of section 11. Test information Update of Figure 4 All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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All rights reserved 15 / 17 PHPT61003NY NXP Semiconductors 100 V, 3 A NPN high power bipolar transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ................................................... 10 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 14 15 15.1 15.2 15.3 15.4 Legal information .................................................15 Data sheet status ............................................... 15 Definitions ...........................................................15 Disclaimers .........................................................15 Trademarks ........................................................ 16 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 September 2015 PHPT61003NY Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 17 / 17