PHPT60410NY 40 V, 10 A NPN high power bipolar transistor 27 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • • • • • High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications • • • • • • Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V IC collector current - - 10 A ICM peak collector current single pulse; tp ≤ 1 ms - - 20 A RCEsat collector-emitter saturation resistance IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs; - 28 40 mΩ δ ≤ 0.02; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline Graphic symbol C mb B E sym123 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number PHPT60410NY Package Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PHPT60410NY 0410NAB PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 7 V IC collector current - 10 A ICM peak collector current - 20 A IB base current - 1 A IBM peak base current single pulse; tp ≤ 1 ms - 2 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.3 W [2] - 3.3 W [3] - 5 W [4] - 25 W single pulse; tp ≤ 1 ms Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] [4] PHPT60410NY Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm . Device mounted on an ceramic PCB; Al2O3, standard footprint. Power dissipation from junction to mounting base. All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor aaa-014224 6 (1) Ptot (W) 4 (2) 2 (3) 0 -75 25 125 Tamb (°C) 225 (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. 2 Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-mb) thermal resistance from junction to mounting base [1] [2] [3] PHPT60410NY Product data sheet Min Typ Max Unit [1] - - 115 K/W [2] - - 45 K/W [3] - - 30 K/W - - 6 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm . Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor aaa-014225 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 10 0.2 0.1 0.05 0.02 0.01 1 0.25 0 10-1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-014226 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 10 0.5 0.33 0.2 0.1 0.05 1 0.02 0.01 0.25 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10-1 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 32 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 32 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off VCE = 32 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 2 V; IC = 500 mA; Tamb = 25 °C 230 370 - PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor Symbol Parameter Conditions Min Typ Max Unit VCE = 2 V; IC = 1 A; tp ≤ 300 µs; 220 360 - 140 230 - 55 90 - - 35 50 mV - 140 200 mV - 330 460 mV - 28 40 mΩ - - 0.95 V - - 1.2 V - - 1.3 V δ ≤ 0.02; Tamb = 25 °C VCE = 2 V; IC = 5 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 2 V; IC = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed VCEsat collector-emitter saturation voltage IC = 1 A; IB = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed IC = 5 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 10 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C RCEsat VBEsat collector-emitter saturation resistance IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C base-emitter saturation IC = 1 A; IB = 50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 5 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 10 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = 2 V; IC = 500 mA; Tamb = 25 °C - - 0.8 V td delay time VCC = 12.5 V; IC = 5 A; IBon = 250 mA; - 15 - ns tr rise time IBoff = -250 mA; Tamb = 25 °C - 130 - ns ton turn-on time - 145 - ns ts storage time - 310 - ns tf fall time - 95 - ns toff turn-off time - 405 - ns fT transition frequency - 128 - MHz - 57 - pF VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 °C Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor aaa-014213 600 IC (A) (1) hFE 150 12 (2) 400 aaa-014214 16 100 175 125 75 50 8 (3) 25 200 15 4 10 IB = 5 mA 0 10-1 1 102 10 0 103 104 IC (mA) VCE = 2 V 1 2 3 4 VCE (V) 5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 5. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = −55 °C Fig. 4. 0 DC current gain as a function of collector current; typical values aaa-014215 1.2 aaa-014216 1.4 VBE (V) VBEsat (V) 1.0 1 1 0.8 (1) 2 0.6 (2) 0.6 3 (3) 0.4 0.2 10-1 Fig. 6. 1 10 102 0.2 10-1 103 104 IC (mA) 1 10 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PHPT60410NY Product data sheet Fig. 7. 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 27 January 2015 102 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor aaa-015655 1 aaa-014219 1 VCEsat (V) VCEsat (V) 10-1 10-1 (1) (2) (1) (2) 10-2 (3) (3) (4) 10-2 10-1 Fig. 8. 1 10 102 10-3 10-1 103 104 IC (mA) 1 10 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 20 Collector-emitter saturation voltage as a function of collector current; typical values (4) IC/IB = 10 aaa-014220 102 Fig. 9. 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values aaa-014221 103 RCEsat (Ω) RCEsat (Ω) 102 10 10 1 1 (1) 10-2 10-1 (1) (2) 10-1 10-1 (3) 1 10 102 103 (2) (3) 10-2 10-1 104 IC (mA) (4) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 20 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PHPT60410NY Product data sheet 10 102 103 104 IC (mA) (4) IC/IB = 10 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 13. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669) PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT60410NY v.1 20150127 Product data sheet - - PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 15 PHPT60410NY NXP Semiconductors 40 V, 10 A NPN high power bipolar transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 9 Quality information ............................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 January 2015 PHPT60410NY Product data sheet All information provided in this document is subject to legal disclaimers. 27 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15