PHPT61010NY 100 V, 10 A NPN high power bipolar transistor 20 March 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY 2. Features and benefits • • • • • High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications • • • • • • Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 100 V IC collector current - - 10 A ICM peak collector current single pulse; tp ≤ 1 ms - - 20 A RCEsat collector-emitter saturation resistance IC = 10 A; IB = 1 A; tp ≤ 300 µs; - 25 37 mΩ δ ≤ 0.02; Tamb = 25 °C; pulsed Scan or click this QR code to view the latest information for this product PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline Graphic symbol C mb B E sym123 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number PHPT61010NY Package Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PHPT61010NY 1010NAB PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 100 V VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 7 V IC collector current - 10 A ICM peak collector current - 20 A IB base current - 1 A IBM peak base current single pulse; tp ≤ 1 ms - 2 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.5 W [2] - 3.7 W [3] - 5 W [4] - 25 W single pulse; tp ≤ 1 ms Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] [4] PHPT61010NY Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm . Device mounted on an ceramic PCB; Al2O3, standard footprint. Power dissipation from junction to mounting base. All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor aaa-015929 8 Ptot (W) 6 (1) 4 (2) 2 (3) 0 -75 25 125 Tamb (°C) 225 (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. 2 Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-mb) thermal resistance from junction to mounting base [1] [2] [3] PHPT61010NY Product data sheet Min Typ Max Unit [1] - - 100 K/W [2] - - 41 K/W [3] - - 30 K/W - - 6 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm . Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor aaa-015930 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 10 0.2 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-015931 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 10 0.33 0.2 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 80 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 2 V; IC = 0.5 A; Tamb = 25 °C 150 275 - VCE = 2 V; IC = 1 A; tp ≤ 300 µs; 150 270 - 60 110 - 25 50 - - 30 50 mV - 120 180 mV - 250 370 mV - 25 37 mΩ - - 0.95 V - - 1.15 V - - 1.35 V δ ≤ 0.02; Tamb = 25 °C VCE = 2 V; IC = 5 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 2 V; IC = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed VCEsat collector-emitter saturation voltage IC = 1 A; IB = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed IC = 5 A; IB = 0.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C RCEsat VBEsat collector-emitter saturation resistance IC = 10 A; IB = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed base-emitter saturation IC = 1 A; IB = 50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 5 A; IB = 0.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = 2 V; IC = 0.5 A; Tamb = 25 °C - - 0.9 V td delay time VCC = 12.5 V; IC = 5 A; IBon = 250 mA; - 25 - ns tr rise time IBoff = -250 mA; Tamb = 25 °C - 365 - ns ton turn-on time - 390 - ns ts storage time - 280 - ns tf fall time - 220 - ns toff turn-off time - 500 - ns PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor Symbol Parameter Conditions Min Typ Max Unit fT transition frequency VCE = 10 V; IC = 500 mA; f = 100 MHz; - 145 - MHz - 40 70 pF Tamb = 25 °C Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C aaa-015976 500 aaa-015977 12 IB = 260 mA hFE 400 190 IC (A) (1) 140 100 8 300 70 (2) 50 30 200 4 (3) 15 100 10 5 0 10-1 1 10 102 0 103 104 IC (mA) VCE = 2 V 1 2 3 4 VCE (V) 5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 5. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. 0 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor aaa-015978 1.2 aaa-015979 1.2 VBE (V) VBEsat (V) 1.0 1.0 0.8 0.8 (1) (1) 0.6 0.6 (2) (2) 0.4 0.2 10-1 Fig. 6. 1 10 (3) 0.4 (3) 102 0.2 10-1 103 104 IC (mA) 1 10 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig. 7. aaa-015980 1 VCEsat (V) 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values aaa-015981 1 VCEsat (V) (1) (2) 10-1 102 10-1 (3) (1) 10-2 (2) (3) 10-2 (4) 10-3 10-1 Fig. 8. 1 10 102 10-3 10-1 103 104 IC (mA) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 20 Collector-emitter saturation voltage as a function of collector current; typical values (4) IC/IB = 10 PHPT61010NY Product data sheet Fig. 9. 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 20 March 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor aaa-015982 103 aaa-015983 103 RCEsat (Ω) RCEsat (Ω) 102 102 (1) (2) 10 10 (3) (4) (1) 1 1 (2) (3) 10-1 10-2 10-1 10-1 1 10 102 10-2 10-1 103 104 IC (mA) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 20 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PHPT61010NY Product data sheet 10 102 103 104 IC (mA) (4) IC/IB = 10 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 13. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669) PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT61010NY v.1 20150320 Product data sheet - - PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 16 PHPT61010NY NXP Semiconductors 100 V, 10 A NPN high power bipolar transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ................................................... 10 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 March 2015 PHPT61010NY Product data sheet All information provided in this document is subject to legal disclaimers. 20 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 16 / 16