SO T8 9 PXT2222A NPN switching transistors 2 April 2014 Product data sheet 1. General description NPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) SurfaceMounted Device (SMD) plastic package. PNP complement: PXT2907A 2. Features and benefits • • High current: max. 600 mA Low voltage: max. 40 V 3. Applications • Switching and linear amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V IC collector current - - 600 mA hFE DC current gain 100 - 300 VCE = 10 V; IC = 150 mA; Tamb = 25 °C; δ ≤ 0.02; tp ≤ 300 µs; pulsed 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline C B 3 2 1 SOT89 Scan or click this QR code to view the latest information for this product Graphic symbol E sym123 PXT2222A NXP Semiconductors NPN switching transistors 6. Ordering information Table 3. Ordering information Type number Package PXT2222A Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code [1] PXT2222A %1P [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current - 600 mA ICM peak collector current - 800 mA IBM peak base current - 200 mA Ptot total power dissipation [1] - 0.5 W [2] - 0.8 W [3] - 1.1 W tp ≤ 1 ms; single pulse Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] PXT2222A Product data sheet Transistor mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm . 2 Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm . All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 15 PXT2222A NXP Semiconductors NPN switching transistors 006aaa238 1600 Ptot (mW) 1200 (1) (2) 800 (3) 400 0 - 75 - 25 25 75 125 175 Tamb (°C) 2 (1) FR4 PCB; 6 cm mounting pad for collector. 2 (2) FR4 PCB; 1 cm mounting pad for collector. (3) FR4 PCB; standard footprint. Fig. 1. Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point PXT2222A Product data sheet Min Typ Max Unit [1] - - 250 K/W [2] - - 156 K/W [3] - - 113 K/W - - 30 K/W [1] [2] Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm . 2 Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm . 2 All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 15 PXT2222A NXP Semiconductors NPN switching transistors 006aaa235 103 Zth (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0 1 10-5 0.01 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 Mounted on FR4 PCB; standard footprint. Fig. 2. Transient thermal impedance as a function of pulse time; typical values 006aaa236 103 Zth (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 10 0 1 10-5 0.05 0.02 0.01 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 Mounted on FR4 PCB; mounting pad for collector 1 cm . Fig. 3. Transient thermal impedance as a function of pulse time; typical values PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 15 PXT2222A NXP Semiconductors NPN switching transistors 006aaa237 103 Zth (K/W) 102 duty cycle = 1 0.75 0.33 0.5 0.2 10 0.1 0.05 0.02 0 1 10-5 0.01 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 Mounted on FR4 PCB; mounting pad for collector 6 cm2. Fig. 4. Transient thermal impedance as a function of pulse time; typical values PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 15 PXT2222A NXP Semiconductors NPN switching transistors 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 60 V; IE = 0 A; Tamb = 25 °C - - 10 nA VCB = 60 V; IE = 0 A; Tj = 125 °C - - 10 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 10 nA hFE DC current gain VCE = 10 V; IC = 0.1 mA; Tamb = 25 °C 35 - - VCE = 10 V; IC = 1 mA; Tamb = 25 °C 50 - - VCE = 10 V; IC = 10 mA; Tamb = 25 °C 75 - - VCE = 10 V; IC = 10 mA; Tj = -55 °C 35 - - VCE = 1 V; IC = 150 mA; tp ≤ 300 µs; 50 - - 100 - 300 40 - - IC = 150 mA; IB = 15 mA; Tamb = 25 °C - - 300 mV IC = 500 mA; IB = 50 mA; Tamb = 25 °C - - 1 V base-emitter saturation IC = 150 mA; IB = 15 mA; Tamb = 25 °C voltage IC = 500 mA; IB = 50 mA; Tamb = 25 °C 0.6 - 1.2 V - - 2 V delay time IC = 150 mA; IBon = 15 mA; - - 15 ns tr rise time IBoff = -15 mA; Tamb = 25 °C - - 20 ns ton turn-on time - - 35 ns ts storage time - - 200 ns tf fall time - - 60 ns toff turn-off time - - 250 ns CC collector capacitance - - 8 pF - - 25 pF 300 - - MHz - - 4 dB δ ≤ 0.02; Tamb = 25 °C; pulsed VCE = 10 V; IC = 150 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed VCE = 10 V; IC = 500 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed VCEsat VBEsat td collector-emitter saturation voltage VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C CE emitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = 10 V; IC = 20 mA; f = 100 MHz; Tamb = 25 °C NF noise figure VCE = 5 V; IC = 200 µA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tamb = 25 °C PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 15 PXT2222A NXP Semiconductors NPN switching transistors aaa-011462 600 0.8 IC (A) hFE aaa-011463 IB = 13 mA 11.7 9.1 10.4 6.5 0.6 400 7.8 5.2 3.9 (1) 2.6 0.4 (2) 200 1.3 0.2 (3) 0 10-1 1 10 102 IC (mA) 0 103 VCE = 10 V 2 4 6 8 VCE (V) 10 Tamb = 25 °C (1) Tamb = 150 °C Fig. 6. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = −55 °C Fig. 5. 0 DC current gain as a function of collector current; typical values aaa-011464 1.2 aaa-011465 1.2 VBEsat (V) VBE (V) 1.0 0.8 (1) 0.8 (1) (2) (2) 0.6 0.4 (3) 0.4 0 10-1 Fig. 7. 1 10 102 IC (mA) 0.2 10-1 103 (3) 1 VCE = 1 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values PXT2222A Product data sheet Fig. 8. 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 2 April 2014 10 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 15 PXT2222A NXP Semiconductors NPN switching transistors aaa-011466 1 VCEsat (V) (1) (2) 10-1 (3) 10-2 10-1 1 10 102 IC (mA) 103 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 15 PXT2222A NXP Semiconductors NPN switching transistors 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 10. BISS transistor switching time definition VBB RB VCC RC (probe) oscilloscope 450 Ω Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 11. Test circuit for switching times PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 15 PXT2222A NXP Semiconductors NPN switching transistors 12. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 0.53 0.40 1.5 2 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig. 12. Package outline SOT89 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 1.1 (2×) 1.5 solder paste occupied area Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 13. Reflow soldering footprint for SOT89 PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 15 PXT2222A NXP Semiconductors NPN switching transistors 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 14. Wave soldering footprint for SOT89 PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 15 PXT2222A NXP Semiconductors NPN switching transistors 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PXT2222A v.5 20140402 Product data sheet - PXT2222A v.4 Modifications: • • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. General description: updated. Quick refernce data: added. Thermal characteristics: Figure 2 to 4 updated. Limiting values: values of IC, ICM and IBM parameters corrected. Characteristics: Figures 5 to 9 added. Soldering information: added. Legal information: updated. PXT2222A v.4 20041122 Product specification - PXT2222A v.3 PXT2222A v.3 19990414 Product specification - PXT2222A v.2 PXT2222A v.2 19970505 Product specification - PXT2222A v.1 PXT2222A v.1 19940901 Product specification - - PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 15 PXT2222A NXP Semiconductors NPN switching transistors grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 1 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 April 2014 PXT2222A Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 15 / 15