DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 08 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X FEATURES QUICK REFERENCE DATA • High hFE and low VCEsat at high current operation SYMBOL • High collector current capability: IC maximum 5 A VCEO collector-emitter voltage 20 V IC collector current (DC) 5 A ICM peak collector current 10 A RCEsat equivalent on-resistance 44 mΩ • Higher efficiency leading to less heat generation. APPLICATIONS PARAMETER MAX. UNIT • Medium power peripheral drivers, e.g. fans and motors PINNING • Strobe flash units for DSC and mobile phones • Inverter applications, e.g. TFT displays PIN DESCRIPTION • Power switch for LAN and ADSL systems 1 emitter • Medium power DC-to-DC conversion 2 collector • Battery chargers. 3 base DESCRIPTION NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5520X. 2 MARKING 3 MARKING CODE(1) TYPE NUMBER PBSS4520X 1 *1F sym042 3 Note 1. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. 2 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4520X 2004 Nov 08 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 5 A ICRM repetitive peak collector current notes 1 and 2 − 7 A ICM peak collector current tp ≤ 1 ms − 10 A − 1 A − 2 A notes 1 and 2 − 2.5 W note 2 − 0.55 W note 3 − 1 W note 4 − 1.4 W note 5 − 1.6 W +150 °C IB base current (DC) IBM peak base current tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C Tstg storage temperature −65 Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Nov 08 3 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor 001aaa229 1600 Ptot (mW) PBSS4520X (1) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 08 4 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 006aaa232 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 5 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa234 103 Zth (K/W) 102 (1) (2) (3) (4) 10 (5) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 6 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MAX. UNIT VCB = 20 V; IE = 0 A − − 100 nA − − 50 µA VEB = 5 V; IC = 0 A − − 100 nA − − 100 nA IC = 0.5 A 300 450 − IC = 1 A; note 1 300 440 − IC = 2 A; note 1 250 420 − IC = 5 A; note 1 200 380 − emitter-base cut-off current ICES collector-emitter cut-off current VCE = 20 V; VBE = 0 V hFE DC current gain VCE = 2 V collector-emitter saturation voltage TYP. VCB = 20 V; IE = 0 A; Tj = 150 °C IEBO VCEsat MIN. IC = 0.5 A; IB = 5 mA − 35 50 mV IC = 1 A; IB = 10 mA − 50 70 mV IC = 2.5 A; IB = 125 mA; note 1 − 85 120 mV IC = 4 A; IB = 200 mA; note 1 − 130 180 mV IC = 5 A; IB = 500 mA; note 1 − 160 220 mV RCEsat equivalent on-resistance IC = 5 A; IB = 500 mA; note 1 − 32 44 mΩ VBEsat base-emitter saturation voltage IC = 4 A; IB = 200 mA; note 1 − 0.9 1.05 V IC = 5 A; IB = 500 mA; note 1 − 0.96 1.1 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A − 0.74 0.85 V fT transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 100 125 − MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz − 90 110 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Nov 08 7 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 001aaa746 1000 001aaa750 1.2 hFE VBE (V) 800 0.8 (1) 600 (2) 400 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. Tamb = 25 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. 001aaa747 103 1 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. 001aaa748 103 VCEsat (mV) VCEsat (mV) 102 102 (1) (2) (1) (2) 10 (3) (3) 10 1 1 10−1 1 10 102 10−1 10−1 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = −55 °C. (3) Tamb = 25 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 08 8 1 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 001aaa749 1.2 001aaa878 1.2 VBEsat (V) VBE (V) (1) 0.8 (1) 0.8 (2) (2) (3) (3) 0.4 0.4 0 10−1 1 102 10 0 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. 001aaa745 250 IC (mA) (6) (5) (4) (3) (2) 001aaa879 102 RCEsat (Ω) (1) 200 10 (7) 150 (8) 1 (9) 100 (10) 10−1 50 (1) (2) 10−2 0 0 Tamb = 25 °C. (1) IB = 5 mA. (2) IB = 4.5 mA. (3) IB = 4 mA. 0.4 0.8 (4) (5) (6) (7) 1.2 IB = 3.5 mA. IB = 3 mA. IB = 2.5 mA. IB = 2 mA. 10−1 1.6 2 VCE (V) 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (8) IB = 1.5 mA. (9) IB = 1 mA. (10) IB = 0.5 mA. Fig.12 Collector current as a function of collector-emitter voltage; typical values. 2004 Nov 08 1 (3) Fig.13 Equivalent on-resistance as a function of collector current; typical values. 9 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X Reference mounting conditions 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 40 mm 1 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm MLE322 001aaa234 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Nov 08 10 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 08 REFERENCES IEC JEDEC JEITA TO-243 SC-62 11 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Nov 08 12 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 08 Document order number: 9397 750 13884