DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Jun 11 2004 Nov 04 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X FEATURES QUICK REFERENCE DATA • High hFE and low VCEsat at high current operation SYMBOL • High collector current capability: IC maximum 4 A VCEO collector-emitter voltage 40 V IC collector current (DC) 4 A ICM peak collector current 10 A RCEsat equivalent on-resistance 71 mΩ • High efficiency leading to less heat generation. APPLICATIONS PARAMETER MAX. UNIT • Medium power peripheral drivers (e.g. fan and motor) • Strobe flash units for DSC and mobile phones PINNING • Inverter applications (e.g. TFT displays) PIN • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION 1 emitter 2 collector 3 base DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. 2 3 MARKING 1 MARKING CODE(1) TYPE NUMBER PBSS4540X sym042 3 *1B 2 1 Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4540X 2004 Nov 04 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 4 A ICRM maximum repetitive collector current notes 1 and 2 − 5 A ICM peak collector current tp ≤ 1 ms − 10 A IB base current (DC) − 1 A IBM peak base current tp ≤ 1 ms − 2 A Ptot total power dissipation Tamb ≤ 25 °C notes 1 and 2 − 2.5 W note 2 − 0.55 W note 3 − 1 W note 4 − 1.4 W note 5 − 1.6 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Nov 04 3 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 001aaa229 1600 (1) Ptot (mW) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4; standard footprint. Fig.2 Power derating curves. 2004 Nov 04 4 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS from junction to ambient Rth(j-s) VALUE UNIT notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W in free air from junction to soldering point Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 006aaa232 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 5 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa234 103 Zth (K/W) 102 (1) (2) (3) (4) 10 (5) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 6 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector-base cut-off current VCB = 30 V; IE = 0 A − − 100 nA VCB = 30 V; IE = 0 A; Tj = 150 °C − − 50 μA ICES collector-emitter cut-off current VCE = 30 V; VBE = 0 V − − 0.1 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 2 V; IC = 0.5 A 300 − − VCE = 2 V; IC = 1 A; note 1 300 − − VCE = 2 V; IC = 2 A; note 1 250 − − VCE = 2 V; IC = 5 A; note 1 100 − − − − 90 mV ICBO VCEsat collector-emitter saturation IC = 0.5 A; IB = 5 mA voltage IC = 1 A; IB = 10 mA − − 120 mV IC = 2 A; IB = 200 mA; note 1 − − 150 mV IC = 4 A; IB = 200 mA; note 1 − − 290 mV IC = 5 A; IB = 500 mA; note 1 − − 355 mV RCEsat equivalent on-resistance IC = 5 A; IB = 500 mA; note 1 − 40 71 mΩ VBEsat base-emitter saturation voltage IC = 4 A; IB = 200 mA; note 1 − − 1.1 V IC = 5 A; IB = 500 mA; note 1 − − 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A − − 1.1 V fT transition frequency VCE = 10 V; IC = 0.1 A; f = 100 MHz 70 − − MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz − − 75 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Nov 04 7 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 001aaa223 800 hFE 001aaa222 1.2 (1) VBE (V) 600 (2) 0.8 (1) (2) 400 (3) (3) 0.4 200 0 10−1 1 10 102 0.0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = 55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. 001aaa225 1 10 102 Base-emitter voltage as a function of collector current; typical values. 001aaa997 1 VCEsat (V) VCEsat (V) 10−1 10−1 103 104 IC (mA) (1) (1) (2) 10−2 (2) 10−2 (3) (3) 10−3 10−1 1 10 102 10−3 10−1 103 104 IC (mA) (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Fig.9 IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 04 8 1 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 001aaa227 10 001aaa224 102 RCEsat (Ω) VBEsat (V) 1 10 1 (1) (2) (3) 10−1 (1) (2) (3) 10−1 10−1 1 10 102 10−2 10−1 103 104 IC (mA) 1 102 10 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. 001aaa973 103 001aaa221 10 RCEsat (Ω) IC (A) 102 8 (1) (1) 6 10 (2) (2) (3) 1 (3) 4 (4) (5) 10−1 10−2 10−1 2 1 10 102 0 103 104 IC (mA) 0 (2) IC/IB = 50. (1) IB = 25 mA. (2) IB = 20 mA. (3) IC/IB = 10. Fig.12 Equivalent on-resistance as a function of collector current; typical values. 2004 Nov 04 1 1.5 2 VCE (V) Tamb = 25 °C. (1) IC/IB = 100. 0.5 (3) IB = 15 mA. (4) IB = 10 mA. (5) IB = 5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 9 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X Reference mounting conditions 32 mm 32 mm 10 mm 2.5 mm 40 mm 40 mm 1 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm 001aab105 001aaa234 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Nov 04 10 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 04 REFERENCES IEC JEDEC JEITA TO-243 SC-62 11 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 04 12 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 04 Document order number: 9397 750 13885