SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 20 V, 30 V, 40 V, 50 V, 60 V IFSM 100 A EAS 20 mJ VF 0.5 V, 0.75 V TJ max. 150 °C Package DO-214AB (SMC) Diode variations Single For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS32 SS33 SS34 SS35 SS36 S2 S3 S4 S5 S6 UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 Maximum average forward rectified current at TL (fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ dV/dt 10 000 V/μs TJ -55 to +150 °C TSTG -55 to +150 °C Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range V Revision: 04-Aug-15 Document Number: 88751 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) 3.0 A SYMBOL SS33 VF TA = 25 °C Maximum DC reverse current at rated DC blocking voltage (1) SS32 SS35 0.5 SS36 UNIT 0.75 V 0.5 IR TA = 100 °C SS34 20 mA 10 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) SS32 SS33 SS34 RJA 55 RJL 17 SS35 SS36 UNIT °C/W Note PCB. mounted 0.55" x 0.55" (14 mm x 14 mm) copper pad areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.235 57T 850 7" diameter plastic tape and reel SS34-E3/9AT 0.235 9AT 3500 13" diameter plastic tape and reel SS34HE3_A/H (1) 0.235 H 850 7" diameter plastic tape and reel SS34HE3_A/I (1) 0.235 I 3500 13" diameter plastic tape and reel SS34-E3/57T Note AEC-Q101 qualified (1) 3.5 100 Peak Forward Surge Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 3.0 2.5 2.0 1.5 1.0 PCB Mounted on 0.55" x 0.55" (14 mm x 14 mm) Copper Pad Area 0.5 SS32 thru SS36 0 0 25 50 75 100 125 150 At Rated TL 8.3 ms Single Half Sine-Wave 80 60 40 20 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 04-Aug-15 Document Number: 88751 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor 10 TJ = 150 °C Pulse Width = 300 ˩s 1% Duty Cycle 1 TJ = 25 °C 0.1 SS32 thru SS34 SS35 and SS36 0.01 0 Instantaneous Reverse Current (mA) Junction Capacitance (pF) 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p SS32 thru SS34 SS35 and SS36 10 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 100 SS32 thru SS34 SS35 and SS36 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C 1 TJ = 75 °C 0.1 0.01 TJ = 25 °C 0.001 0 20 40 60 80 10 1 0.1 0.01 100 0.1 Percent of Rated Peak Reverse Voltage (%) 1 10 100 t - Pulse Duration (s) Fig. 4 - Typical Reverse Current Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 04-Aug-15 Document Number: 88751 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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