ES3A, ES3B, ES3C, ES3D Datasheet

ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pallet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
DO-214AB (SMC)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
100 A
trr
20 ns
VF
0.90 V
TJ max.
150 °C
Package
DO-214AB (SMC)
Diode variations
Single die
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
ES3A
ES3B
ES3C
ES3D
UNIT
EA
EB
EC
ED
100
150
200
V
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TL = 100 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 19-Feb-15
Document Number: 88589
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
SYMBOL
ES3B
VF (1)
3.0 A
TA = 25 °C
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
ES3A
TA = 100 °C
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum reverse recovery time
IF = 3.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
Maximum stored charge
IF = 3.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
Typical junction capacitance
4.0 V, 1 MHz
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
ES3D
0.90
µA
500
20
ns
30
trr
ns
50
15
Qrr
nC
35
CJ
UNIT
V
10
IR
trr
TJ = 25 °C
ES3C
45
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
ES3A
ES3B
ES3C
RJA (1)
47
RJL (1)
12
ES3D
UNIT
°C/W
Note
(1) Units mounted on PCB with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ES3D-E3/57T
0.211
57T
850
7" diameter plastic tape and reel
ES3D-E3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
ES3DHE3_A/H (1)
0.211
H
850
7" diameter plastic tape and reel
0.211
I
3500
13" diameter plastic tape and reel
PREFERRED P/N
ES3DHE3_A/I
(1)
Note
(1) AEC-Q101 qualified
Revision: 19-Feb-15
Document Number: 88589
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
3.0
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.31" x 0.31" (8.0 mm x 8.0 mm)
Copper Pad Areas
0
90
100
110
120
130
140
TJ = 100 °C
100
10
1
150
TJ = 25 °C
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
150
50
8.3 ms Single Half Sine-Wave
at TL = 100 °C
125
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 125 °C
1000
0.1
80
100
75
50
25
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
40
30
20
10
0
1
10
100
0.1
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.1
0.3
0.5
0.7
0.9
1
10
100
Reverse Voltage (V)
Number of Cycles at 60 Hz
Instantaneous Forward Current (A)
TJ = 150 °C
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Junction Capacitance

















Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 19-Feb-15
Document Number: 88589
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 19-Feb-15
Document Number: 88589
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000