SS32 thru SS36 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 20 V to 60 V IFSM 100 A EAS 20 mJ VF 0.5 V, 0.75 V TJ max. 125 °C, 150 °C MECHANICAL DATA Case: DO-214AB (SMC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS32 SS33 SS34 SS35 SS36 S2 S3 S4 S5 S6 UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forward rectified current at TL (Fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Voltage rate of change (rated VR) dv/dt Operating junction temperature range Storage temperature range Document Number: 88751 Revision: 23-Jan-08 TJ TSTG 10 000 - 55 to + 125 - 55 to + 150 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V/µs - 55 to + 150 °C °C www.vishay.com 1 SS32 thru SS36 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) SYMBOL 3.0 A SS33 VF TA = 25 °C TA = 100 °C Maximum DC reverse current at rated DC blocking voltage (1) SS32 SS34 SS35 0.5 SS36 UNIT 0.75 V 0.5 IR 20 mA 10 Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS32 SS33 SS34 RθJA RθJL Typical thermal resistance (1) SS35 SS36 UNIT 55 17 °C/W Note: (1) P.C.B. mounted 0.55 x 0.55" (14 x 14 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.235 57T 850 7" diameter plastic tape and reel 3500 13" diameter plastic tape and reel SS34-E3/57T SS34-E3/9AT 0.235 9AT (1) 0.235 57T 850 7" diameter plastic tape and reel SS34HE3/9AT (1) 0.235 9AT 3500 13" diameter plastic tape and reel SS34HE3/57T Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 3.5 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 3.0 2.5 SS32 - SS34 SS35 & SS36 2.0 1.5 1.0 P.C.B. Mounted on 0.55 x 0.55" (14 x 14 mm) Copper Pad Areas 0.5 0 At Rated TL 8.3 ms Single Half Sine-Wave 80 60 40 20 0 50 70 90 110 130 150 170 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88751 Revision: 23-Jan-08 SS32 thru SS36 Vishay General Semiconductor 1000 TJ = 125 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 Pulse Width = 300 µs 1 % Duty Cycle 1 TJ = 25 °C 0.1 SS32 - SS34 SS35 & SS36 0.01 0.2 0.6 0.4 1.0 0.8 1.4 1.2 1.6 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p SS32 - SS34 SS35 & SS36 10 0 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 100 100 SS32 - SS34 SS35 & SS36 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 10 TA = 125 °C 1 0.1 TA = 75 °C 0.01 TA = 25 °C 0.001 0 20 40 60 1 0.1 0.01 100 80 10 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Current Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Mounting Pad Layout Cathode Band 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.008 (0.2) 0 (0) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) Document Number: 88751 Revision: 23-Jan-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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