Evaluation Board for Easy2B 3-Level Modules

Application Note AN 2010-09
V1.0, Dec. 2010
F3L030E07-F-W2_EVAL
Evaluation Board for Easy2B 3-Level Modules in
NPC-Topology with 1ED020I12-F gate driver IC
IFAG IMM INP M AE
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Application Note AN 2010-09
V1.0, Dec. 2010
Edition 2010-05-07
Published by
Infineon Technologies AG
59568 Warstein, Germany
© Infineon Technologies AG 2010.
All Rights Reserved.
Attention please!
THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE
IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR
QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION
NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON
TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND
(INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL
PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN
IN THIS APPLICATION NOTE.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components
may only be used in life-support devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
AN 2010-07
Revision History: 2010-07, V1.0
Previous Version: none
Page: Subjects (major changes since last revision)
All: First release
Author: Alain Siani (IFAG IMM INP M AE)
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will
help us to continuously improve the quality of this document. Please send your proposal (including a
reference to this document) to: [[email protected]]
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Application Note AN 2010-09
V1.0, Dec. 2010
Table of contents
Part number explanation....................................................................................... 4
1
Introduction ......................................................................................4
2
Design features ................................................................................5
3
4
2.1
Main features .............................................................................................. 5
2.2
Pin assignments......................................................................................... 6
2.3
Mechanical dimensions ............................................................................. 6
Application note ...............................................................................7
3.1
Power Supply.............................................................................................. 7
3.1
Input logic – PWM signals ......................................................................... 8
3.2
Booster........................................................................................................ 8
3.5
Short circuit protection and clamp function ............................................ 9
3.6
Active Miller Clamp .................................................................................... 9
3.7
Fault output .............................................................................................. 10
3.8
Temperature measurement ..................................................................... 11
3.9
Switching losses ...................................................................................... 11
Schematic and Layout of F3L030E07-F-W2_EVAL .....................12
4.1
Schematic ................................................................................................. 12
4.2
Layout ....................................................................................................... 16
5
Bill of Material of F3L030E07-F-W2_EVAL ...................................19
6
How to order the Evaluation Driver Boards.................................20
7
References......................................................................................21
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Application Note AN 2010-09
V1.0, Dec. 2010
Part number explanation
F3L
030
E07
-F
-W2
_EVAL
Evaluation Board
Package Easy2B
Functional isolation
Suitable for 650V module
2 Amp driver ICs
3 Level evaluation board
Warnings
The described board is an evaluation board dedicated for laboratory environment
only. It operates at high voltages. This board must be operated by qualified,
skilled personnel familiar with all applicable safety standards.
1
Introduction
The Evaluation Driver Board F3L030E07-F-W2_EVAL for 3-Level Easy2B modules shown in Figure 1
was developed to support customers during their first steps designing applications with Easy2B
3-Level modules. For more details about the 3-Level topology, please refer to [1].
The board is available from Infineon in small quantities. The properties of this part are described in the
datasheet chapter of this document, whereas the remaining paragraphs provide information intended
to enable the customer to copy, modify and qualify the design for production, according to their own
specific requirements.
The design of the F3L030E07-F-W2_EVAL was performed with respect to the environmental
conditions described in this document. The requirements of lead-free reflow soldering have been
considered during component selection. The design was tested as described in this document, but not
qualified regarding manufacturing, lifetime or over the full ambient operating conditions.
The boards provided by Infineon are subjected to functional testing only.
Due to their purpose Evaluation Boards are not subjected to the same procedures regarding Returned
Material Analysis (RMA), Process Change Notification (PCN) and Product Discontinuation (PD) as
regular products.
See Legal Disclaimer and Warnings for further restrictions on Infineons warranty and liability.
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Evaluation Board for
Easy2B 3_Level Modules
2
Application Note AN 2010-09
V1.0, Dec. 2010
Design features
The following sections provide an overview of the board including main features, key data, pin
assignments and mechanical dimensions.
Figure 1
2.1
The Evaluation Board F3L030E07-F-W2_EVAL with Easy2B 3-Level module
Main features
The Evaluation Board F3L030E07-F-W2_EVAL as shown in Figure 1 contains four coreless
transformers ICs 1ED020I12-F from Infineon and one Infineon Easy2B 3-Level module as one phase
leg. Figure 2 shows the functional groups of the evaluation board.
The evaluation board provides the following main features as described in Figure 2:
- Functional isolation between high and low side utilizing coreless transformer technology.
- Short circuit protection and under voltage lock out.
- Active clamping protection for high and low-side IGBTs directly connected to the DC- bus bar.
- Active Miller Clamp.
- IGBT DCB temperature monitoring by NTC.
- Integrated and fully isolated power supply for each IGBT driver.
- +5V supply for the logic.
SMPS IGBT1 – IGBT2
Main connector
Easy2B 3-Level
DC-Link
Driver IGBT1
Driver IGBT2
Phase output
Logic power
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Driver IGBT3
SMPS IGBT3 - IGBT4
NTC output
Driver IGBT4
Figure 2
Functional groups of the evaluation board F3L030E07-F-W2
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2.2
Application Note AN 2010-09
V1.0, Dec. 2010
Pin assignments
All PWM signals and voltage supplies should be applied as listed in Table 1.
Table 1
Pin assignments of the connectors X1, X2, X3, X4, X5 and X6
Pin name
Pin function
X1-1
+IN_1
X1-3
+IN_2
X1-5
+IN_3
X1-7
+IN_4
X1-9
/RST
X1-13
+15V
X1-2, X1-4, X1-6, X1-8, X1-10 X1-14
GND
X1-11
/FLT_T
X1-12
/FLT_B
X2-1
+15V_1
X2-2
E1
X3-1
+15V_2
X3-2
E2
X4-1
+15V_3
X4-2
E3
X5-1
+15V_4
X5-2
E4
X6-1
TEMP+
X6-2
TEMP-
2.3 Mechanical dimensions
Figure 3
Mechanical dimensions of the F3L030E07-F-W2
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Application note
3.1
Power Supply
Application Note AN 2010-09
V1.0, Dec. 2010
The F3L030E07-F-W2_EVAL has two DC/DC converters, which generate four secondary isolated
unipolar supply voltage sources of +15 V for each IGBT driver as shown in Figure 4. The driver
voltages are independently generated by using one unipolar input voltage of +15 V. Furthermore, the
power supplies are protected against gate-emitter short circuit of the IGBTs. In case of a DC/DC
converter overload, the output voltage drops. The 1ED020I12-F1 IGBT driver IC monitors the supply
voltage and activates the UVLO2 as soon as the supply voltage drops below the UVLO reference
value of the 1ED020I12-F.
In order to assure the proper shutdown sequence of all IGBTs in the case of an under voltage of the
driver ICs, it is important to switch off IGBT1 and IGBT4 first. There is one high voltage blocking diode
in series with each +15V power line of the high and the low-side IGBT driver. This generates an
additional voltage drop so that the external IGBT driver ICs closest to the DC-Link detect the Under
Voltage Lock Out and shut down first.
The linear voltage regulator (U1) provides a second supply voltage of 5 V for the logic side of the
evaluation board from the main +15V source. If the four generated +15V voltage sources on board are
not needed, each driver could be externally supplied by the connectors X2, X3, X4 and X5. In this
case the powering of the SMPS can be interrupted by removing the diodes D1R1 and D1R3, shown in
Figure 15, 16.
The Evaluation board of Easy2B 3-Level module has three terminals DC+, NCLAMP and DC- for the
connection to an external DC-Link voltage. The phase output is connected to the terminal OUT.
+5V logic
+15V_IGBT1
+5V
SMPS
connector
Main voltage
source +15V
X5
GND_IGBT1
Driver IGBT1
+5V
TR1
+15V_IGBT2
GND_IGBT2
Driver IGBT2
+5V
TR3
+15V_IGBT3
PWM1
GND_IGBT3
PWM2
PWM3
+15V_IGBT4
F3L-Easy2B
Driver IGBT3
+5V
PWM4
/RST
/FLT_T
/FLT_B
GND_IGBT4
Linear Voltage
PWM1 to PWM4
regulators
X6
Figure 4
1
2
Driver IGBT4
Principle diagram of the F3L030E07-F-W2_EVAL
Infineon IGBT Gate Driver IC
Under Voltage Lock Out
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3.1
Application Note AN 2010-09
V1.0, Dec. 2010
Input logic – PWM signals
The F3L030E07-F-W2_EVAL Driver Board is designed for one leg Easy2B 3-Level IGBT module
configuration; therefore it is necessary to connect four separate PWM signals for IGBT1 to IGBT4.
The schematic in Figure 5 shows the driver circuit. IN+ is used as signal input with +5V positive logic.
IN- is connected to ground.
Figure 5
3.2
Schematic of the input circuit for a single driver for one IGBT
Booster
Complementary transistors are used to amplify the driver ICs signal as shown in Figure 6. This
enables the driving of IGBT’s that require more current than the IC can deliver. One NPN transistor is
used for switching the IGBT on and one PNP transistor for switching the IGBT off.
The transistors are dimensioned to have enough peak current to drive the 650 V Easy2B modules.
Peak current can be calculated according to equation (2):
I peak =
∆Vout
RGint + RGext + RDriver
(2)
RDriver ≈ 0.7Ω is the internal output resistance of the booster
RGext is the external gate resistor of the IGBT module
RGint is the internal gate resistor of the IGBT module
Figure 6
Booster
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Application Note AN 2010-09
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Short circuit protection and clamp function
The short circuit protection of the Evaluation Driver Board is realized by the detection of a defined
saturation voltage level of IGBT1 and IGBT4. During the on state of the IGBT module, the saturation
voltage UCE is less than 9V. If a short circuit occurs, the collector current and the saturation voltage
UCE increase. With the IGBT in the commanded on state if the collector emitter voltage rises and the
voltage on the DESAT pin of the driver IC reaches 9V a short circuit is detected and the output is
driven low. The short circuit is reported on the control side as /FLT. An active low reset signal is
needed to reactivate the 1ED020I12-F driver IC. The short circuit monitoring of IGBT2 and IGBT3 is
not necessary.
Figure 7
Desaturation protection and active clamping diodes
The evaluation driver board contains an active clamping function. If the voltage across the IGBT
exceeds the zener voltage of ZD3 the clamp will be activated and the gate voltage will increase. In
case of a short circuit the saturation voltage UCE will rise and the driver detects a short circuit. The
IGBT has to be switched off. There will be an overvoltage due to the stray inductances of the module
and DC-Link. This overvoltage has to be lower than the maximum IGBT blocking voltage. If a higher
operation DC-link voltage is needed it is important to adjust the breakdown voltage of the clamping
diodes DZ1 and DZ2 shown in Figure11 and 14 to avoid the conduction of the active clamp circuit
during normal switching conditions.
The dc capacitor bank must be placed as close as possible to the evaluation Board to avoid
undesirable stray inductance in the DC power supply line
3.6
Active Miller Clamp
Due to the economical point of view, it is mostly preferred to supply the IGBT gate driver for low power
converters with an unipolar voltage 15V/0V instead of utilizing a bipolar supply voltage e.g. +15V/-15V.
In this solution, the effect of a parasitic turn on can not be avoided without an additional effort. The
parasitic turn on emerges, when i.e. the upper IGBT T1 in a half bridge is switched on and takes over
the commutation current of the free wheeling Diode of T2. At the same time the voltage across the
lower IGBT T2 increases and a high dVCE/dt appears. The current flows through the parasitic Miller
capacitor CCG of the lower IGBT, the gate resistors RGint, RGext and internal driver gate resistor,
RDRIVER_int. Fig.8 shows the current flow through the capacitor CCG.
I CG = C CG *
dVCE
dt
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Application Note AN 2010-09
V1.0, Dec. 2010
This current creates a voltage drop across the resistors. If this voltage exceeds the IGBT gate
threshold voltage, a parasitic turn-on occurs [4].
One of the features of the 1ED020I12 IGBT gate driver is the “Active Miller Clamping”, which is a very
effective solution to suppress the parasitic turn on. The Miller Clamp reduces the voltage drop caused
by the Miller current passing through the gate circuit during a high dV/dt situation. Therefore, the use
of a negative supply voltage can be avoided in many applications. During turn-off, the gate voltage is
monitored and the clamp output is activated when the gate voltage goes below 2V (related to VEE2).
T1
ICG = CCG*dUCE/dt
Miller capacitor CCG
IGBT driver
dUCE/dt
RDriver_int
RGext
RGint
UGEint
UGEext
Figure 8
3.7
T2
IGBT intenal
Parasitic turn-on on the bottom IGBT stray inductance
Fault output
When a short circuit occurs, the desaturation protection circuit of the 1ED020I12-F reacts and the
IGBT is switched off. The fault is reported to the primary side of the driver as long as there is no reset
signal applied to the driver. The /FLT signal is active low, the according schematic is shown in Figure
9.
Figure 9
Fault output and Reset for a single driver
The fault signal will be in low state in case of a short circuit until /RST is pulled down.
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Application Note AN 2010-09
V1.0, Dec. 2010
Temperature measurement
The IGBT DCB temperature can be monitored by proper usage of the NTC resistor built into the
module. The evaluation of the temperature information requires an external circuit. Further information
on using the NTC including the NTC characteristics is described in application note AN2009-10 [2].
Notice:
This temperature measurement is not suitable for short circuit detection or short term overload and
may be used to protect the module from long term overload conditions or malfunction of the cooling
system.
It is recommended that the design incorporate functional isolation between the NTC and any low
voltage control circuits.
3.9
Switching losses
The setup used for this application note varies from the setup used to characterize the devices and the
following aspects have to be taken into consideration
DC-link inductance:
The DC-link inductance of the setup used for these tests has a value of approximately 60nH for all
modules investigated here in contrast to the values of 35nH used for device characterization (see
device datasheets for details). For a detailed discussion on the impact of DC-link inductance on
switching losses please refer to [3].
Gate voltage:
This evaluation board provides a gate voltage of 0 V for turning off and 15 V for turning on whereas
characterization is done with a driver providing +/- 15 V of gate voltage.
Gate driver output impedance: According to IEC 60747-9 for characterization of an IGBT the driver
used should be an ideal voltage source as far as possible. For the Evaluation Board a driver output
stage has been chosen that considers board space as well as cost constraints. Therefore it cannot
provide close to zero output impedance.
All aspects discussed above have an impact on the switching speed of the module and hence also on
the switching losses. Figure 10 shows an example of the turn-on and turn-off behavior of an
F3L150R07W2E3_B11 module.
200ns / div
200ns / div
UGE, 5V / div
UCE, 100V / div
Ic, 50A / div
UGE, 5V / div
Ic, 50A / div
UCE, 100V / div
Figure 10
Turn-on and Turn-off curve of T4 with F3L150R07W2E3_B11 module
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Application Note AN 2010-09
V1.0, Dec. 2010
Schematic and Layout of F3L030E07-F-W2_EVAL
To meet the individual customer requirements and make the evaluation board simple for further
development or modification, all necessary technical data: schematics, pcb layout and component
data are included in this chapter
4.1
Schematic
Figure 11
Driver IGBT1
Figure 12
Driver IGBT2
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Evaluation Board for
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Figure 13
Driver IGBT3
Figure 14
Driver IGBT4
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Figure 15
Driver DC/DC converter IGBT1 and IGBT2
Figure 16
Driver DC/DC converter IGBT3 and IGBT4
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Figure 17
Logic supply
Figure 18
Power and Logic connectors
Figure 19
Logic signals
Application Note AN 2010-09
V1.0, Dec. 2010
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Figure 20
4.2
Application Note AN 2010-09
V1.0, Dec. 2010
IGBT module
Layout
Figure 21
Assembly drawing
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Figure 22
Top-Layer
Figure 23
Layer-1
Application Note AN 2010-09
V1.0, Dec. 2010
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Figure 24
Layer-2
Figure 25
Bottom-Layer
Application Note AN 2010-09
V1.0, Dec. 2010
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Application Note AN 2010-09
V1.0, Dec. 2010
Bill of Material of F3L030E07-F-W2_EVAL
The bill of material includes a part list as well as assembly notes.
The tolerances for resistors should be less or equal to ±1 %, for capacitors of the type C0G less or
equal to ±5 % and for capacitors of the type X7R less or equal to ±10 %.
Type
Value / Type
Package
QTY
Name Part
Recommended
Manufacturer
resistor
1k
R0603
3
R1, R35, R62
-
resistor
2k
R0805
4
R58, R59, R60, R61
-
resistor
39R
R0805
2
R2, R36
-
-
resistor
4k7
R0603
12
R3, R4, R5, R14,
R15, R16, R25,
R26, R27, R37,
R38, R39
resistor
10k
R0603
6
R6, R11, R22, R33,
R40, R45
-
resistor
0R47
R1206
4
R9, R20, R31, R43
Special pulse
resistors
resistor
3R3
R1206
8
R7, R9, R18, R20,
R29, R31, R41, R43
Special pulse
resistors
resistor
68R1
R0603
4
R8, R19, R30, R42
-
resistor
10R
R0805
4
R110, R21, R32,
R44
-
resistor
0R0
R0603
4
R12, R23, R34, R46
-
resistor
15R
R0603
2
R48, R49
-
resistor
68k
R0603
2
R47, R52
-
resistor
2k2
R0603
2
R50, R55
-
resistor
0R15
R0805
2
R51, R56
-
resistor
15R
R0603
2
R53, R54
-
resistor
150R
R1206
1
R57
-
resistor
10R
R1206
2
R63, R64
-
Murata
capacitor
4µ7/25V/X7R
C1206
26
C1B, C1B1, C1T1,
C1T2, C2, C2B,
C2B1, C2T1, C2T2,
C3, C8, C9 , C14,
C15, C21, C22,
C27, C30, C32,
C34, C35, C38,
C40, C42, C43, C44
capacitor
100n/50V/X7R
C0603
10
C4, C7, C10, C13,
C16, C19, C23,
C26, C28, C36
Murata
capacitor
1µ/25V/X7R
C0805
2
C29, C37
Murata
14
C1, C5, C6, C11,
C12, C17, C181,
C20, C24, C25,
Murata
capacitor
100p/50V/C0G
C0603
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C31, C33 , C39,
C41
connector
MPT 0,5/ 2-2,54
MPT 0,5/ 22,54
5
X2, X3, X4, X5, X6
Phoenix contact
connector
163468844
16346884
1
X1
Tyco
mounting tabs
for PCB
3866G68
3866G68
4
DC+, DC-,
NCLAMP, OUT
Vogt
semiconductor
BC856
SOT23
2
T1, T4
-
semiconductor
ES1D
DO214AC
4
D3, D9, D13, D14
Vishay
Infineon
semiconductor
BAT165
SOD323R
22
D1B, D1B1, D1R1,
D1R2, D1R3, D1R4,
D1R5, D1R6, D1T1,
D1T2, D2, D2B,
D2B1, D2T1, D2T2,
D4, D5, D6, D8,
D10, D11, D12,
semiconductor
P6SMB480C
SMB
2
DZ1, DZ2
Diotec
semiconductor
ZXGD3004E6
SOT23-6
4
IC1, IC3, IC5, IC7
Zetex
semiconductor
1ED020I12-F
P-DSO-16
4
IC2, IC4, IC6, IC8
Infineon
semiconductor
STTH112U
SOD6
2
D1, D7
ST
semiconductor
IR2085S
SO08
2
IC9, IC10
International
Rectifier
semiconductor
BSL302SN
TSOP-6
4
T5, T6, T7, T8
Infineon
semiconductor
ZSR500G
SOT223
1
U1
Zetex
semiconductor
F3L150R07W2E3_B11
Easy2B
1
IGBT
Infineon
semiconductor
LEDCHIPLED_GREEN
0805
5
+5V, +15V1, +15V2,
+15V3, +16V4
-
semiconductor
LEDCHIPLED_RED
0805
2
/FLT_T, /FLT_B
-
transformer
T60403 D4615-X054
2
TR1, TR2
VAC
6
How to order the Evaluation Driver Boards
Every Evaluation Driver Board has its own IFX order number and can be ordered via your Infineon
Sales Partner.
Information can also be found at the Infineons Web Page: www.infineon.com
CAD-data for the board described here are available on request. The use of this data is subjected to
the disclaimer given in this AN. Please contact: [email protected]
IFX order number for F3L030E07-F-W2_EVAL: 35431
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7
References
[1]
Zhang Xi, Uwe Jansen, Holger Rüthing : ‘IGBT power modules utilizing new 650V IGBT3 and
Emitter Controlled Diode3 chips for 3-Level converter’ ISBN: 978-3-8007-3158-9 Proceedings
PCIM Europe 2009 Conference
[2]
The AN2009-10 : ‘Using the NTC inside a power electronic module’, is available on Infineon
website
[3]
Bäßler, M., Ciliox A., Kanschat P : On the loss – softness trade-off: Are different chip versions
needed for softness improvement” ISBN: 978-3-8007-3158-9 Proceedings PCIM Europe 2009
Conference
[4]
AN2006-01 "Driving IGBTs with unipolar gate voltage"
21